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42 条记录 (耗时 0.032 秒)

    Hybrid sensor
    3.
    发明授权
    Hybrid sensor 失效
    混合传感器

    公开(公告)号：US5786744A

    公开(公告)日：1998-07-28

    申请号：US409197

    申请日：1995-03-23

    申请人： Tomoyuki Nishio ,  Satoshi Hiyama ,  Mizuho Doi ,  Nobuhiro Fueki ,  Hiroshi Yamakawa

    发明人： Tomoyuki Nishio ,  Satoshi Hiyama ,  Mizuho Doi ,  Nobuhiro Fueki ,  Hiroshi Yamakawa

    IPC分类号： G01C19/00 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/18 ,  H01C7/00

    CPC分类号： G01P15/08 ,  G01P15/008 ,  G01P15/12 ,  G01P15/18 ,  G01P9/00

    摘要： A hybrid sensor which is comprised of an acceleration sensor for detecting acceleration based on a temperature distribution of a predetermined gas hermetically enclosed within a fluid-tight space, and an angular velocity sensor for detecting angular velocity based on a deviation of a flow of a predetermined gas. The acceleration sensor and the angular velocity sensor are formed in one piece by the use of semiconductor processing technology in such a manner that the acceleration sensor and the angular velocity sensor are formed on a plurality of semiconductor substrates, and then the plurality of semiconductor substrates are superposed one upon another and united into a laminate.

    摘要翻译： 一种混合式传感器，包括：加速度传感器，用于根据气密地封闭在流体密封空间内的预定气体的温度分布来检测加速度;以及角速度传感器，用于根据预定的 加油站。 通过利用半导体处理技术将加速度传感器和角速度传感器形成为一体，使加速度传感器和角速度传感器形成在多个半导体基板上，然后将多个半导体基板 叠加在一起并组合成层压板。

    Gas flow type angular velocity sensor and method of constructing same
    4.
    发明授权
    Gas flow type angular velocity sensor and method of constructing same 失效
    气流式角速度传感器及其构造方法

    公开(公告)号：US5438871A

    公开(公告)日：1995-08-08

    申请号：US889817

    申请日：1992-05-29

    申请人： Takashi Hosoi ,  Mizuho Doi ,  Tomoyuki Nishio ,  Satoshi Hiyama

    发明人： Takashi Hosoi ,  Mizuho Doi ,  Tomoyuki Nishio ,  Satoshi Hiyama

    IPC分类号： G01C19/00 ,  G01P9/00

    CPC分类号： G01P9/00 ,  Y10T29/49007

    摘要： A gas flow type angular velocity sensor comprising two semiconductor substrates wherein only the first semiconductor substrate is provided with a groove etched thereon constituting the gas path and the second semiconductor substrate is provided with paired heat wires formed thereon. The two semiconductor substrates are coupled and bonded to each other to form the sensor body.

    摘要翻译： 一种气流式角速度传感器，其包括两个半导体衬底，其中只有第一半导体衬底设置有构成气体路径的蚀刻在其上的沟槽，而第二半导体衬底上形成有一对热丝。 两个半导体衬底彼此结合并结合以形成传感器体。

    Semiconductor sensor
    5.
    发明授权
    Semiconductor sensor 失效
    半导体传感器

    公开(公告)号：US5115292A

    公开(公告)日：1992-05-19

    申请号：US403296

    申请日：1989-09-05

    申请人： Katsuhiko Takebe ,  Mizuho Doi ,  Hiroyasu Takehara ,  Satoshi Hiyama ,  Masanobu Urabe

    发明人： Katsuhiko Takebe ,  Mizuho Doi ,  Hiroyasu Takehara ,  Satoshi Hiyama ,  Masanobu Urabe

    IPC分类号： G01P15/08 ,  G01P15/12

    CPC分类号： G01P15/123 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/13091 ,  Y10S73/04

    摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.

    Semiconductor sensor
    6.
    发明授权
    Semiconductor sensor 失效
    半导体传感器

    公开(公告)号：US5279162A

    公开(公告)日：1994-01-18

    申请号：US848693

    申请日：1992-03-09

    申请人： Katsuhiko Takebe ,  Mizuho Doi ,  Hiroyasu Takehara ,  Satoshi Hiyama ,  Masanobu Urabe

    发明人： Katsuhiko Takebe ,  Mizuho Doi ,  Hiroyasu Takehara ,  Satoshi Hiyama ,  Masanobu Urabe

    IPC分类号： G01P15/08 ,  G01P15/12 ,  G01L9/00 ,  H01L29/84

    CPC分类号： G01P15/123 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/13091 ,  Y10S73/04

    摘要： This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.

    摘要翻译： 本发明涉及用于检测诸如加速度，接触压力，空气压力，机械振动等外部物理力的半导体传感器。根据本发明的半导体传感器的特征在于使用高压电性的化合物半导体，例如GaAs 等等。常规地，悬臂式，隔膜式等的传感器由硅制成。 这些现有技术的传感器具有低检测灵敏度，并且它们的特性趋于恶化。 根据本发明的传感器由GaAs制成，其具有高压电性，并且即使在高温下也能保持半导体的良好特性，并且包括形成在GaAs上用于感测应力的场效应晶体管。 FET由恒定电流或恒定电压驱动，以便检测由于应力引起的电特性（例如，阈值特性）的变化。 根据本发明的传感器的结构使得传感器的尺寸不仅可以减小，而且可以降低制造成本。 当FET施加应力时，跨导变化，温度变化，I-V特性变化。 一个 通过直流电流偏置的信号被提供给FET的栅极，并且以直流方式检测漏极电流。 组件和直径 以便与应力的检测同时检测温度。

    Dieting support system and dieting support method
    8.
    发明授权
    Dieting support system and dieting support method 有权
    节食支持系统和节食支持方法

    公开(公告)号：US09183757B2

    公开(公告)日：2015-11-10

    申请号：US13979458

    申请日：2012-09-04

    申请人： Yuuki Yamada ,  Satoshi Hiyama

    发明人： Yuuki Yamada ,  Satoshi Hiyama

    IPC分类号： G09B19/00 ,  G06F19/00 ,  G06Q50/22

    CPC分类号： G09B19/0092 ,  G06F19/00 ,  G06F19/3475 ,  G06F19/3481 ,  G06Q50/22

    摘要： A dieting support system includes a function that detects a component of biogas and that measures concentration of the biogas, a function that accumulates and analyzes the measured result, and a function that determines suitable timing for taking a meal or suitable timing for doing exercise, depending on the analyzed result.

    摘要翻译： 节食支持系统包括检测生物气成分并测量生物气体浓度，累积和分析测量结果的功能的功能，以及确定适合用餐时间或适合运动时间的功能，这取决于 对分析结果。

    Molecular communication system and molecular communication method
    10.
    发明授权
    Molecular communication system and molecular communication method 有权
    分子通信系统和分子通信方法

    公开(公告)号：US08209127B2

    公开(公告)日：2012-06-26

    申请号：US11740466

    申请日：2007-04-26

    申请人： Yuki Moritani ,  Satoshi Hiyama ,  Tatsuya Suda

    发明人： Yuki Moritani ,  Satoshi Hiyama ,  Tatsuya Suda

    IPC分类号： G01N33/50 ,  C12P19/34 ,  C12Q1/58

    CPC分类号： H04B13/00 ,  Y10S977/702

    摘要： A molecular communication system includes a molecular transmitter (20) configured to transmit an information molecules (15) onto which prescribed information is encoded; a molecular receiver (30) configured to receive the information molecule, a molecule propagation channel (40) extending from the molecular transmitter to the molecular receiver, and a molecular capsule (10) configured to encapsulate the information molecules to be transmitted from the molecular transmitter to the molecular receiver, wherein the surfaces of the molecular transmitter, the molecular receiver, and the molecular capsule have lipid bilayer membrane structure, and wherein the system further includes encapsulation means for applying a first chemical substance to the molecular transmitter, or to the molecular transmitter and the molecular capsule to encapsulate the information molecules into the molecular capsule, and decapsulation means for applying a second chemical substance to the molecular capsule and the molecular receiver to take the information molecules out of the molecular capsule and take them into the molecular receiver.

    摘要翻译： 分子通信系统包括分配发射机（20），其被配置为传送其上编码有规定信息的信息分子（15） 被配置为接收所述信息分子的分子接收器（30），从所述分子发射器延伸到所述分子接收器的分子传播通道（40）以及分子胶囊（10），被配置为封装要从所述分子发射器传输的信息分子 其中分子发射器，分子接收器和分子胶囊的表面具有脂质双层膜结构，并且其中所述系统还包括用于将第一化学物质施加到分子发射器或分子 发射器和分子胶囊将信息分子包封到分子胶囊中，以及解封装置，用于将第二化学物质施加到分子胶囊和分子接收器以将信息分子从分子胶囊中取出并将其带入分子接收器。