Method for depositing a material onto the surface of an object
    1.
    发明授权
    Method for depositing a material onto the surface of an object 有权
    将材料沉积到物体表面上的方法

    公开(公告)号:US08334019B2

    公开(公告)日:2012-12-18

    申请号:US12635768

    申请日:2009-12-11

    IPC分类号: B05D3/02 B05D1/34 B05D1/36

    摘要: The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material. According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.

    摘要翻译: 本发明涉及一种在物体表面上沉积材料层的方法,该方法包括将所述材料的溶液层沉积在第一液体中,然后蒸发第一液体以形成第 材料。 根据本发明,该方法包括在物体和溶液层之间形成第二液体层,第二液体与第一液体不混溶,密度大于第一液体的密度,并且蒸发 温度高于第一液体。

    METHOD FOR DEPOSITING A MATERIAL ONTO THE SURFACE OF AN OBJECT
    2.
    发明申请
    METHOD FOR DEPOSITING A MATERIAL ONTO THE SURFACE OF AN OBJECT 有权
    将材料沉积在物体表面上的方法

    公开(公告)号:US20100183806A1

    公开(公告)日:2010-07-22

    申请号:US12635768

    申请日:2009-12-11

    IPC分类号: B05D3/02

    摘要: The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material.According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.

    摘要翻译: 本发明涉及一种在物体表面上沉积材料层的方法,该方法包括将所述材料的溶液层沉积在第一液体中,然后蒸发第一液体以形成第 材料。 根据本发明,该方法包括在物体和溶液层之间形成第二液体层,第二液体与第一液体不混溶,密度大于第一液体的密度,并且蒸发 温度高于第一液体。

    METHOD FOR MANUFACTURING TWO ADJACENT AREAS MADE OF DIFFERENT MATERIALS
    5.
    发明申请
    METHOD FOR MANUFACTURING TWO ADJACENT AREAS MADE OF DIFFERENT MATERIALS 有权
    制造不同材料的两个相邻区域的方法

    公开(公告)号:US20130029455A1

    公开(公告)日:2013-01-31

    申请号:US13639284

    申请日:2011-03-07

    IPC分类号: H01L51/40

    摘要: The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.

    摘要翻译: 本发明涉及一种用于制造表面相邻的第一和第二区域的方法,所述区域分别由彼此不同的第一和第二材料组成。 所述方法包括:沉积包含第一区域的第一液体体积并且包含第一材料分散在其中的溶剂; 沉积包含第二区域的第二液体体积并且包括分散有第二材料的溶剂; 并除去溶剂。 根据本发明,第一和第二体积的溶剂是不混溶的,并且在第一体积到达第二区域之前,第二体积与第一体积的沉积同时或连续地沉积。

    Method for making holes using a fluid jet
    7.
    发明授权
    Method for making holes using a fluid jet 有权
    使用流体射流制造孔的方法

    公开(公告)号:US08450217B2

    公开(公告)日:2013-05-28

    申请号:US13519265

    申请日:2010-12-22

    摘要: The method for making a hole in a layer includes the provision of first and second adhesion areas on a surface of a support. The first area has dimensions corresponding to the dimensions of the hole. The method includes depositing a layer on the first and second adhesion areas. The material of the layer has an adhesion coefficient to the first area lower than the adhesion coefficient to the second area. The part of layer arranged above the first area is eliminated by a fluid jet.

    摘要翻译: 在层中制造孔的方法包括在支撑体的表面上设置第一和第二粘附区域。 第一区域具有与孔的尺寸相对应的尺寸。 该方法包括在第一和第二粘附区域上沉积一层。 该层的材料具有比第二区域的粘附系数低的第一区域的粘附系数。 通过流体射流消除了布置在第一区域上方的层的部分。

    METHOD FOR MAKING HOLES USING A FLUID JET
    8.
    发明申请
    METHOD FOR MAKING HOLES USING A FLUID JET 有权
    使用流体喷嘴制造孔的方法

    公开(公告)号:US20120289045A1

    公开(公告)日:2012-11-15

    申请号:US13519265

    申请日:2010-12-22

    IPC分类号: H01L21/71

    摘要: The method for making a hole in a layer includes the provision of first and second adhesion areas on a surface of a support. The first area has dimensions corresponding to the dimensions of the hole. The method includes depositing a layer on the first and second adhesion areas. The material of the layer has an adhesion coefficient to the first area lower than the adhesion coefficient to the second area. The part of layer arranged above the first area is eliminated by a fluid jet.

    摘要翻译: 在层中制造孔的方法包括在支撑体的表面上设置第一和第二粘附区域。 第一区域具有与孔的尺寸相对应的尺寸。 该方法包括在第一和第二粘附区域上沉积一层。 该层的材料具有比第二区域的粘附系数低的第一区域的粘附系数。 通过流体射流消除了布置在第一区域上方的层的部分。

    Photodiode device containing a capacitor for controlling dark current or leakage current
    9.
    发明授权
    Photodiode device containing a capacitor for controlling dark current or leakage current 有权
    含有用于控制暗电流或漏电流的电容器的光电二极管装置

    公开(公告)号:US09142789B2

    公开(公告)日:2015-09-22

    申请号:US14127271

    申请日:2012-07-04

    申请人: Mohamed Benwadih

    发明人: Mohamed Benwadih

    IPC分类号: H01L51/44 H01L51/52

    摘要: An organic photodiode, including a first electrode forming an anode, an active layer, a second electrode, and at least one third electrode, forming a capacitance with another electrode, to trap at least part of dark current or leakage current.

    摘要翻译: 一种有机光电二极管,包括形成阳极的第一电极,有源层,第二电极和至少一个第三电极,与另一个电极形成电容,以捕获至少一部分暗电流或漏电流。

    Organic field-effect transistor and method of fabricating this transistor
    10.
    发明授权
    Organic field-effect transistor and method of fabricating this transistor 有权
    有机场效应晶体管及其制造方法

    公开(公告)号:US08258504B2

    公开(公告)日:2012-09-04

    申请号:US12628415

    申请日:2009-12-01

    申请人: Mohamed Benwadih

    发明人: Mohamed Benwadih

    IPC分类号: H01L35/24

    摘要: This organic field effect transistor comprises a semiconductor layer made of an organic semiconductor material. The mobility μsup of the charge carriers in the first portion of the semiconductor layer is X times greater than the mobility μinf of the charge carriers in the second portion of the semiconductor layer, with the first portion corresponding to 10% of the volume of the semiconductor layer closest to the gate electrode and the second portion corresponding to 10% of the volume of the semiconductor layer closest to the drain and source electrodes.

    摘要翻译: 该有机场效应晶体管包括由有机半导体材料制成的半导体层。 半导体层的第一部分中的电荷载流子的迁移率μsup比半导体层的第二部分中的电荷载流子的迁移率μinf大X倍,第一部分对应于半导体的体积的10% 最靠近栅电极的层,第二部分对应于最靠近漏极和源电极的半导体层的体积的10%。