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公开(公告)号：US08617713B2
公开(公告)日：2013-12-31
申请号：US12174682
申请日：2008-07-17
IPC分类号： B32B27/00
CPC分类号： C08J7/047 , C08J2327/12 , C08J2327/18 , C08J2400/14 , C08J2427/00 , H01L51/0036 , H01L51/052 , H01L51/0529 , H01L51/0541 , H01L51/0545 , Y10T428/269 , Y10T428/31504 , Y10T428/3154
摘要： The invention relates to a device comprising a layer made from a fluoropolymer, of which at least part of the surface is covered with a composition comprising a polymer having at least one fluorinated function and at least one acid or base function and forming a bonding layer on said fluoropolymer, said bonding layer being fully or partly covered by another layer.
摘要翻译： 本发明涉及一种装置，其包括由含氟聚合物制成的层，其中至少部分表面被包含具有至少一个氟化官能团和至少一种酸或碱功能的聚合物的组合物覆盖，并形成粘合层 所述含氟聚合物，所述粘合层被另一层完全或部分地覆盖。
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2.发明授权公开(公告)号：US08889473B2
公开(公告)日：2014-11-18
申请号：US13639284
申请日：2011-03-07
CPC分类号： H01L51/0007 , B82Y30/00 , H01L51/0005 , H01L51/0022 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0074 , H01L51/0094 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.
摘要翻译： 本发明涉及一种用于制造表面相邻的第一和第二区域的方法，所述区域分别由彼此不同的第一和第二材料组成。 所述方法包括：沉积包含第一区域的第一液体体积并且包含第一材料分散在其中的溶剂; 沉积包含第二区域的第二液体体积并且包括分散有第二材料的溶剂; 并除去溶剂。 根据本发明，第一和第二体积的溶剂是不混溶的，并且在第一体积到达第二区域之前，第二体积与第一体积的沉积同时或连续地沉积。
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公开(公告)号：US20130029455A1
公开(公告)日：2013-01-31
申请号：US13639284
申请日：2011-03-07
IPC分类号： H01L51/40
CPC分类号： H01L51/0007 , B82Y30/00 , H01L51/0005 , H01L51/0022 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0074 , H01L51/0094 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.
摘要翻译： 本发明涉及一种用于制造表面相邻的第一和第二区域的方法，所述区域分别由彼此不同的第一和第二材料组成。 所述方法包括：沉积包含第一区域的第一液体体积并且包含第一材料分散在其中的溶剂; 沉积包含第二区域的第二液体体积并且包括分散有第二材料的溶剂; 并除去溶剂。 根据本发明，第一和第二体积的溶剂是不混溶的，并且在第一体积到达第二区域之前，第二体积与第一体积的沉积同时或连续地沉积。
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公开(公告)号：US20090035565A1
公开(公告)日：2009-02-05
申请号：US12174682
申请日：2008-07-17
CPC分类号： C08J7/047 , C08J2327/12 , C08J2327/18 , C08J2400/14 , C08J2427/00 , H01L51/0036 , H01L51/052 , H01L51/0529 , H01L51/0541 , H01L51/0545 , Y10T428/269 , Y10T428/31504 , Y10T428/3154
摘要： The invention relates to a device comprising a layer made from a fluoropolymer, of which at least part of the surface is covered with a composition comprising a polymer having at least one fluorinated function and at least one acid or base function and forming a bonding layer on said fluoropolymer, said bonding layer being fully or partly covered by another layer.
摘要翻译： 本发明涉及一种装置，其包括由含氟聚合物制成的层，其中至少部分表面被包含具有至少一个氟化官能团和至少一种酸或碱功能的聚合物的组合物覆盖，并形成粘合层 所述含氟聚合物，所述粘合层被另一层完全或部分地覆盖。
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公开(公告)号：US08334019B2
公开(公告)日：2012-12-18
申请号：US12635768
申请日：2009-12-11
CPC分类号： B05D7/54 , B05D1/286 , B05D3/0254 , B05D5/00
摘要： The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material. According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.
摘要翻译： 本发明涉及一种在物体表面上沉积材料层的方法，该方法包括将所述材料的溶液层沉积在第一液体中，然后蒸发第一液体以形成第 材料。 根据本发明，该方法包括在物体和溶液层之间形成第二液体层，第二液体与第一液体不混溶，密度大于第一液体的密度，并且蒸发 温度高于第一液体。
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公开(公告)号：US20100183806A1
公开(公告)日：2010-07-22
申请号：US12635768
申请日：2009-12-11
IPC分类号： B05D3/02
CPC分类号： B05D7/54 , B05D1/286 , B05D3/0254 , B05D5/00
摘要： The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material.According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.
摘要翻译： 本发明涉及一种在物体表面上沉积材料层的方法，该方法包括将所述材料的溶液层沉积在第一液体中，然后蒸发第一液体以形成第 材料。 根据本发明，该方法包括在物体和溶液层之间形成第二液体层，第二液体与第一液体不混溶，密度大于第一液体的密度，并且蒸发 温度高于第一液体。
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7.发明申请ORGANIC TRANSISTOR AND METHOD FOR FABRICATING A DIELECTRIC LAYER OF SUCH A TRANSISTOR 有权用于制造这种晶体管的介电层的有机晶体管和方法公开(公告)号：US20100025668A1
公开(公告)日：2010-02-04
申请号：US12490816
申请日：2009-06-24
IPC分类号： H01L51/10 , H01L21/441 , H01L21/762
CPC分类号： H01L51/0529
摘要： The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness,According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.
摘要翻译： 本发明涉及一种有机晶体管，其包括形成漏极的导电元件; 导电元件，其形成远离漏极的源; 导电元件，其形成具有面向所述漏极的表面的栅极和面向所述源极的表面; 与漏极和源极接触的半导体层; 以及介电层，位于第一栅极之间，其次位于源极和漏极之间，其中介电层具有根据其厚度而变化的介电常数。根据本发明，电介质层包括第一电介质层 介电常数小于4的材料，至少在所述相对的表面之间形成有第二材料的体积，所述体积具有从浇口逐渐变细到漏极和源极之间的空间的整个横截面 并且第二材料的相对介电常数超过4。
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8.发明授权公开(公告)号：US08748872B2
公开(公告)日：2014-06-10
申请号：US12490816
申请日：2009-06-24
IPC分类号： H01L29/08
CPC分类号： H01L51/0529
摘要： The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness. According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.
摘要翻译： 本发明涉及一种有机晶体管，其包括形成漏极的导电元件; 导电元件，其形成远离漏极的源; 导电元件，其形成具有面向所述漏极的表面的栅极和面向所述源极的表面; 与漏极和源极接触的半导体层; 以及电介质层，其首先位于栅极之间，其次位于源极和漏极之间，其中介电层具有根据其厚度而变化的介电常数。 根据本发明，电介质层包括具有小于4的介电常数小于4的第一介电材料层，至少在所述相对面之间形成有第二材料的体积，所述体积具有 从栅极到漏极和源极之间的空间逐渐变细的整个横截面，并且第二材料的相对介电常数超过四个。
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9.发明授权Photodiode device containing a capacitor for controlling dark current or leakage current 有权含有用于控制暗电流或漏电流的电容器的光电二极管装置公开(公告)号：US09142789B2
公开(公告)日：2015-09-22
申请号：US14127271
申请日：2012-07-04
申请人： Mohamed Benwadih
发明人： Mohamed Benwadih
CPC分类号： H01L51/441 , H01L51/5212 , Y02E10/549
摘要： An organic photodiode, including a first electrode forming an anode, an active layer, a second electrode, and at least one third electrode, forming a capacitance with another electrode, to trap at least part of dark current or leakage current.
摘要翻译： 一种有机光电二极管，包括形成阳极的第一电极，有源层，第二电极和至少一个第三电极，与另一个电极形成电容，以捕获至少一部分暗电流或漏电流。
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10.发明授权公开(公告)号：US08258504B2
公开(公告)日：2012-09-04
申请号：US12628415
申请日：2009-12-01
申请人： Mohamed Benwadih
发明人： Mohamed Benwadih
IPC分类号： H01L35/24
CPC分类号： H01L51/0541 , H01L51/0036 , H01L51/0055 , H01L51/0562
摘要： This organic field effect transistor comprises a semiconductor layer made of an organic semiconductor material. The mobility μsup of the charge carriers in the first portion of the semiconductor layer is X times greater than the mobility μinf of the charge carriers in the second portion of the semiconductor layer, with the first portion corresponding to 10% of the volume of the semiconductor layer closest to the gate electrode and the second portion corresponding to 10% of the volume of the semiconductor layer closest to the drain and source electrodes.
摘要翻译： 该有机场效应晶体管包括由有机半导体材料制成的半导体层。 半导体层的第一部分中的电荷载流子的迁移率μsup比半导体层的第二部分中的电荷载流子的迁移率μinf大X倍，第一部分对应于半导体的体积的10％ 最靠近栅电极的层，第二部分对应于最靠近漏极和源电极的半导体层的体积的10％。
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