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    ORGANIC TRANSISTOR AND METHOD FOR FABRICATING A DIELECTRIC LAYER OF SUCH A TRANSISTOR
    1.
    发明申请
    ORGANIC TRANSISTOR AND METHOD FOR FABRICATING A DIELECTRIC LAYER OF SUCH A TRANSISTOR 有权
    用于制造这种晶体管的介电层的有机晶体管和方法

    公开(公告)号：US20100025668A1

    公开(公告)日：2010-02-04

    申请号：US12490816

    申请日：2009-06-24

    申请人： Mohamed Benwadih ,  Christophe Serbutoviez

    发明人： Mohamed Benwadih ,  Christophe Serbutoviez

    IPC分类号： H01L51/10 ,  H01L21/441 ,  H01L21/762

    CPC分类号： H01L51/0529

    摘要： The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness,According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.

    摘要翻译： 本发明涉及一种有机晶体管，其包括形成漏极的导电元件; 导电元件，其形成远离漏极的源; 导电元件，其形成具有面向所述漏极的表面的栅极和面向所述源极的表面; 与漏极和源极接触的半导体层; 以及介电层，位于第一栅极之间，其次位于源极和漏极之间，其中介电层具有根据其厚度而变化的介电常数。根据本发明，电介质层包括第一电介质层 介电常数小于4的材料，至少在所述相对的表面之间形成有第二材料的体积，所述体积具有从浇口逐渐变细到漏极和源极之间的空间的整个横截面 并且第二材料的相对介电常数超过4。

    Organic transistor and method for fabricating a dielectric layer of such a transistor
    2.
    发明授权
    Organic transistor and method for fabricating a dielectric layer of such a transistor 有权
    有机晶体管及其制造方法

    公开(公告)号：US08748872B2

    公开(公告)日：2014-06-10

    申请号：US12490816

    申请日：2009-06-24

    申请人： Mohamed Benwadih ,  Christophe Serbutoviez

    发明人： Mohamed Benwadih ,  Christophe Serbutoviez

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0529

    摘要： The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness. According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.

    摘要翻译： 本发明涉及一种有机晶体管，其包括形成漏极的导电元件; 导电元件，其形成远离漏极的源; 导电元件，其形成具有面向所述漏极的表面的栅极和面向所述源极的表面; 与漏极和源极接触的半导体层; 以及电介质层，其首先位于栅极之间，其次位于源极和漏极之间，其中介电层具有根据其厚度而变化的介电常数。 根据本发明，电介质层包括具有小于4的介电常数小于4的第一介电材料层，至少在所述相对面之间形成有第二材料的体积，所述体积具有 从栅极到漏极和源极之间的空间逐渐变细的整个横截面，并且第二材料的相对介电常数超过四个。

    MIXTURE FOR FABRICATING ADHESIVE ORGANIC GELS AND USE THEROF
    4.
    发明申请
    MIXTURE FOR FABRICATING ADHESIVE ORGANIC GELS AND USE THEROF 审中-公开
    用于制造粘合有机凝胶的混合物及其用途

    公开(公告)号：US20080306178A1

    公开(公告)日：2008-12-11

    申请号：US12110558

    申请日：2008-04-28

    申请人： Christophe SERBUTOVIEZ

    发明人： Christophe SERBUTOVIEZ

    IPC分类号： C08J3/28 ,  C08F20/06 ,  C08L33/08 ,  B29C35/08 ,  C08G65/04

    CPC分类号： C09K19/32 ,  C08F22/105 ,  C08F220/42 ,  C09K19/586 ,  C09K2019/0448 ,  C09K2019/328

    摘要： The mixture according to the invention comprises: molecules having physicochemical properties, monomers, carrying crosslinkable functions, and representing at least 30% by weight of the mixture, advantageously at least 40% by weight. This mixture is used in particular in methods for fabricating and sealing crystal-containing cells or batteries, consisting of juxtaposed troughs.

    摘要翻译： 根据本发明的混合物包括：具有物理化学性质的分子，具有交联功能的单体，并且代表混合物的至少30重量％，有利地为至少40重量％。 该混合物特别用于制造和密封由并置的槽组成的含晶体的电池或电池的方法。

    METHOD FOR MANUFACTURING TWO ADJACENT AREAS MADE OF DIFFERENT MATERIALS
    6.
    发明申请
    METHOD FOR MANUFACTURING TWO ADJACENT AREAS MADE OF DIFFERENT MATERIALS 有权
    制造不同材料的两个相邻区域的方法

    公开(公告)号：US20130029455A1

    公开(公告)日：2013-01-31

    申请号：US13639284

    申请日：2011-03-07

    申请人： Mohamed Benwadih ,  Christophe Serbutoviez ,  Jean-Marie Verilhac

    发明人： Mohamed Benwadih ,  Christophe Serbutoviez ,  Jean-Marie Verilhac

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0007 ,  B82Y30/00 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0053 ,  H01L51/0055 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

    摘要： The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.

    摘要翻译： 本发明涉及一种用于制造表面相邻的第一和第二区域的方法，所述区域分别由彼此不同的第一和第二材料组成。 所述方法包括：沉积包含第一区域的第一液体体积并且包含第一材料分散在其中的溶剂; 沉积包含第二区域的第二液体体积并且包括分散有第二材料的溶剂; 并除去溶剂。 根据本发明，第一和第二体积的溶剂是不混溶的，并且在第一体积到达第二区域之前，第二体积与第一体积的沉积同时或连续地沉积。