摘要:
A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.
摘要:
The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
摘要:
The present invention provides a method of manufacturing a lens, in which the method includes exposing a photoresist to light using a phase shift mask. Here, the phase shift mask includes layout portions respectively corresponding to pixels and lens, in which each of the layout portions has: a light-blocking portion which has a shape of a substantially circle or a substantially concentric zone; a light-transmitting portion which has a shape of a substantially circle or a substantially concentric zone; a phase shift portion which has a shape of a substantially circle or a substantially concentric zone; and a light-blocking frame. Furthermore, the light-transmitting portion, the light-blocking portion and the phase shift portion are arranged alternately so as to form concentric circles, and the light-blocking frame corresponds to a whole or a part of a perimeter of the lens.
摘要:
The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 μm square in size, and includes a distributed index lens 1, a color filter (for example, for green) 2, an Al interconnections 3, a signal transmitting unit 4, a planarized layer 5, a light-receiving device (Si photodiodes) 6, and an Si substrate 7. The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 μm (“grey color”), the film thickness 0.8 μm (“dots pattern”) and the film thickness of 0 μm (“without pattern: white color”), and the medium surrounding the distributed index lens 1 is air (n=1).
摘要:
A solid-state imaging device which includes a color filter having excellent color reproduction, a manufacturing method thereof and a camera are provided.A color filter in a solid-state imaging device 1 having an optical film thickness of approximately ¼ of a set wavelength λ, being sandwiched by a third layer and a fourth layer which are spacer layers in which only 3 layers are laminated and which consist of two types of layers (first layers and a second layer) with different refractive indexes, and further, having a structure that is sandwiched by a film, a first layer, which has a film thickness approximately equal to the above λ/4. Between the two types of layers having different refractive indexes, the first layers are composed of high refractive index material, and the second layer is composed of low refractive index material. The third layer and the fourth layer have an optical film thickness according to the light which passes through, and the material film thickness of the entire color filter also differs for each color of light.