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1.发明授权公开(公告)号：US07692129B2
公开(公告)日：2010-04-06
申请号：US11423776
申请日：2006-06-13
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 μm square in size, and includes a distributed index lens (1), a color filter (for example, for green) (2), an Al interconnections (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving device (Si photodiodes) (6), and an Si substrate (7). The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 μm (“grey color”), the film thickness 0.8 μm (“dots pattern”) and the film thickness of 0 μm (“without pattern: white color”), and the medium surrounding the distributed index lens (1)is air (n=1).
摘要翻译： 本发明提供能够支持入射角较宽的光学系统的固体摄像装置等。 每个像素的尺寸为2.25μm正方形，并且包括分布式折射率透镜（1），滤色器（例如，绿色）（2），Al互连（3），信号发送单元（4），平面化 层（5），光接收装置（Si光电二极管）（6）和Si衬底（7）。 分布式折射率透镜的两级同心圆结构由SiO 2（n = 2）形成，膜厚为1.2μm（“灰色”），膜厚为0.8μm（“点图案”），膜厚为 0μm（“无图案：白色”），分布式折射率透镜（1）周围的介质为空气（n = 1）。
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公开(公告)号：US06653714B2
公开(公告)日：2003-11-25
申请号：US10300440
申请日：2002-11-20
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译： 横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域 具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起基底区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。
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公开(公告)号：US06503808B1
公开(公告)日：2003-01-07
申请号：US09687251
申请日：2000-10-13
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a bass region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译： 横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域 具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起低音区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。
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公开(公告)号：US5429957A
公开(公告)日：1995-07-04
申请号：US286955
申请日：1994-08-08
IPC分类号： H01L29/205 , H01L21/331 , H01L29/10 , H01L29/73 , H01L29/737 , H01L21/203 , H01L29/201 , H01L29/207
CPC分类号： H01L29/7371 , H01L29/1004 , Y10S148/072 , Y10S438/936
摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance, heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.
摘要翻译： 介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。 从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强 通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。 使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。 因此，获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。
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5.发明授权
公开(公告)号：US5371389A
公开(公告)日：1994-12-06
申请号：US101685
申请日：1993-08-04
IPC分类号： H01L29/205 , H01L21/331 , H01L29/10 , H01L29/73 , H01L29/737 , H01L29/161 , H01L29/225
CPC分类号： H01L29/7371 , H01L29/1004 , Y10S148/072 , Y10S438/936
摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.
摘要翻译： 介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。 从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强 通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。 使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。 从而获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。
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6.发明授权Method of monitoring surface roughness of crystal, and crystal growth equipment 失效监测晶体表面粗糙度和晶体生长设备的方法
公开(公告)号：US5205900A
公开(公告)日：1993-04-27
申请号：US702816
申请日：1991-05-21
申请人： Kaoru Inoue , Jean C. Harmand , Toshinobu Matsuno
发明人： Kaoru Inoue , Jean C. Harmand , Toshinobu Matsuno
IPC分类号： C30B23/08 , C30B23/02 , C30B25/02 , H01L21/203
CPC分类号： C30B25/02 , C30B23/02 , Y10S117/913
摘要： Changes in the formation of crystal surface roughness are monitored by making a laser beam incident on the surface of a growing crystal and detecting a reflected laser beam diffracted at the surface of the growing crystal, at a position standing apart from the optical axis of mirror face reflected light of the incident laser beam. A crystal growth equipment making use of this method is also disclosed.
摘要翻译： 通过使激光束入射到生长晶体的表面上并检测在生长晶体的表面处衍射的反射激光束，在与镜面的光轴分离的位置处监测晶体表面粗糙度形成的变化 入射激光束的反射光。 还公开了使用该方法的晶体生长设备。
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7.发明授权公开(公告)号：US07768711B2
公开(公告)日：2010-08-03
申请号：US11423989
申请日：2006-06-14
IPC分类号： G02B3/00
CPC分类号： G02B5/1847 , G02B5/1876 , G02B5/1885 , G02B27/4205
摘要： The present invention provides a method of manufacturing a lens, in which the method includes exposing a photoresist to light using a phase shift mask. Here, the phase shift mask includes layout portions respectively corresponding to pixels and lens, in which each of the layout portions has: a light-blocking portion which has a shape of a substantially circle or a substantially concentric zone; a light-transmitting portion which has a shape of a substantially circle or a substantially concentric zone; a phase shift portion which has a shape of a substantially circle or a substantially concentric zone; and a light-blocking frame. Furthermore, the light-transmitting portion, the light-blocking portion and the phase shift portion are arranged alternately so as to form concentric circles, and the light-blocking frame corresponds to a whole or a part of a perimeter of the lens.
摘要翻译： 本发明提供一种制造透镜的方法，其中所述方法包括使用相移掩模将光致抗蚀剂曝光。 这里，相移掩模包括分别对应于像素和透镜的布局部分，其中每个布局部分具有：具有基本圆形或基本同心的形状的遮光部分; 具有基本上圆形或大体上同心的形状的透光部分; 相移部，其具有大致圆形或大致同心的区域的形状; 和遮光框架。 此外，光透射部分，遮光部分和相移部分交替地布置以形成同心圆，并且遮光框对应于透镜的周边的全部或一部分。
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8.发明申请SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD THEREOF 有权固态成像装置，固态成像装置及其制造方法公开(公告)号：US20090020840A1
公开(公告)日：2009-01-22
申请号：US12189971
申请日：2008-08-12
IPC分类号： H01L31/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.
摘要翻译： 固态成像装置包括具有以二维阵列排列的相关联的微透镜的多个单位像素。 每个微透镜包括具有调制的有效折射率分布的分布式折射率透镜，通过包括具有同心结构的多个图案的组合而获得，所述多个图案被划分成等于或短于入射光的波长的线宽。 多个图案中的至少一个图案包括具有同心结构且第一线宽度和第一膜厚度的下部透光膜，以及具有同心结构的上部透光膜，其在下部透光膜上具有 第二线宽度和第二膜厚度。 分布式折射率透镜具有其中折射率材料在中心处致密并且在同心结构中朝向外侧逐渐变稀的结构。
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公开(公告)号：US20080303058A1
公开(公告)日：2008-12-11
申请号：US12035340
申请日：2008-02-21
申请人： Mitsuyoshi MORI , Toru OKINO , Daisuke UEDA , Toshinobu MATSUNO
发明人： Mitsuyoshi MORI , Toru OKINO , Daisuke UEDA , Toshinobu MATSUNO
IPC分类号： H01L31/0336 , H01L21/329
CPC分类号： H01L27/14689 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
摘要翻译： 固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。 光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。 提供第四半导体层可以减少在黑暗条件下流动的电流。
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公开(公告)号：US20080076039A1
公开(公告)日：2008-03-27
申请号：US11860756
申请日：2007-09-25
IPC分类号： G03F1/00
CPC分类号： G03F7/0005 , G03F1/30
摘要： The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
摘要翻译： 根据本发明的相移掩模是用于制造半导体器件的相移掩模。 相移掩模包括遮光部分，透光部分，相移部分和辅助图案部分，遮光部分，透光部分，相移部分和辅助图案部分 其中所述辅助图形部分在半径方向上的宽度小于所述透光部分的宽度和所述相移部分在半径方向上的宽度。 此外，通过辅助图案部分的曝光光的相位可能与通过透光部分或相移部分的曝光光的相位相反，透光部分或相移部分 最靠近辅助图案部分。
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