摘要:
The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 μm square in size, and includes a distributed index lens 1, a color filter (for example, for green) 2, an Al interconnections 3, a signal transmitting unit 4, a planarized layer 5, a light-receiving device (Si photodiodes) 6, and an Si substrate 7. The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 μm (“grey color”), the film thickness 0.8 μm (“dots pattern”) and the film thickness of 0 μm (“without pattern: white color”), and the medium surrounding the distributed index lens 1 is air (n=1).
摘要:
A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.
摘要:
The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
摘要:
The present invention provides a method of manufacturing a lens, in which the method includes exposing a photoresist to light using a phase shift mask. Here, the phase shift mask includes layout portions respectively corresponding to pixels and lens, in which each of the layout portions has: a light-blocking portion which has a shape of a substantially circle or a substantially concentric zone; a light-transmitting portion which has a shape of a substantially circle or a substantially concentric zone; a phase shift portion which has a shape of a substantially circle or a substantially concentric zone; and a light-blocking frame. Furthermore, the light-transmitting portion, the light-blocking portion and the phase shift portion are arranged alternately so as to form concentric circles, and the light-blocking frame corresponds to a whole or a part of a perimeter of the lens.
摘要:
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
摘要:
A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.