公开(公告)号：US09721984B2

公开(公告)日：2017-08-01

申请号：US13445766

申请日：2012-04-12

申请人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14687

摘要： Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.

公开(公告)号：US20130273686A1

公开(公告)日：2013-10-17

申请号：US13445766

申请日：2012-04-12

申请人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： H01L31/0232 ,  H01L21/28

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14687

摘要： Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.

摘要翻译： 公开了半导体器件和背面照明（BSI）传感器制造方法。 在一个实施例中，制造半导体器件的方法包括提供工件并在工件的前侧形成集成电路。 使用镶嵌工艺在工件的背面上形成导电材料的格栅。

公开(公告)号：US20080223724A1

公开(公告)日：2008-09-18

申请号：US11686504

申请日：2007-03-15

申请人： Kei-Wei Chen ,  Mu-Han Cheng ,  Jian-Sin Tsai ,  Ying-Lang Wang

发明人： Kei-Wei Chen ,  Mu-Han Cheng ,  Jian-Sin Tsai ,  Ying-Lang Wang

IPC分类号： C25D9/00

CPC分类号： C25D17/001 ,  C25D17/007 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/16

摘要： Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.

摘要翻译： 具有辅助阴极的电化学电镀（ECP）装置，以产生均匀的电流密度。 用于电化学沉积的ECP设备包括具有用于在基底上电化学沉积金属的电解质浴的电化学电池。 主阴极和阳极设置在电解槽中以提供主电场。 衬底保持器组件保持连接阴极的半导体晶片。 辅助阴极设置在电化学电池外部以提供辅助电场，使得衬底保持器组件的中心区域处的磁通线密度基本上等于衬底保持器组件的圆周处的磁通密度。

公开(公告)号：US07837841B2

公开(公告)日：2010-11-23

申请号：US11686504

申请日：2007-03-15

申请人： Kei-Wei Chen ,  Mu-Han Cheng ,  Jian-Sin Tsai ,  Ying-Lang Wang

发明人： Kei-Wei Chen ,  Mu-Han Cheng ,  Jian-Sin Tsai ,  Ying-Lang Wang

IPC分类号： C25D5/00 ,  C25D5/18 ,  C25D17/00 ,  C25B15/00

CPC分类号： C25D17/001 ,  C25D17/007 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/16

摘要： Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly.

摘要翻译： 具有辅助阴极的电化学电镀（ECP）装置，以产生均匀的电流密度。 用于电化学沉积的ECP设备包括具有用于在基底上电化学沉积金属的电解质浴的电化学电池。 主阴极和阳极设置在电解槽中以提供主电场。 衬底保持器组件保持连接阴极的半导体晶片。 辅助阴极设置在电化学电池外部以提供辅助电场，使得衬底保持器组件的中心区域处的磁通线密度基本上等于衬底保持器组件的圆周处的磁通密度。