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14 条记录 (耗时 0.037 秒)

    Apparatus and method for reducing contamination in a wafer transfer chamber
    5.
    发明授权
    Apparatus and method for reducing contamination in a wafer transfer chamber 有权

    公开(公告)号：US06595370B2

    公开(公告)日：2003-07-22

    申请号：US09727284

    申请日：2000-11-29

    申请人： Mu-Tsang Lin ,  Yu-Lun Lin ,  Yao-Fey Chuang

    发明人： Mu-Tsang Lin ,  Yu-Lun Lin ,  Yao-Fey Chuang

    IPC分类号： B07B100

    CPC分类号： B01D46/12 ,  C23C14/566 ,  C23C16/4401 ,  H01L21/67017

    摘要： A wafer transfer chamber, such as a load-lock chamber used in a cluster processing tool for semiconductor devices that has reduced particle contamination problem is provided. In the wafer transfer chamber, a particle filter is provided to shield or isolate a wafer cassette during a chamber pumping and venting process such that not only particle contamination on the wafers situated in the wafer cassette can be drastically reduced, but also the cycle time or time for pumping and venting the load-lock chamber can be significantly reduced since turbulent flow in the chamber interior can be tolerated when the wafers are isolated from such flow which carries contaminating particles.

    METHODS OF DETECTING AN ABNORMAL OPERATION OF PROCESSING APPARATUS AND SYSTEMS THEREOF
    6.
    发明申请
    METHODS OF DETECTING AN ABNORMAL OPERATION OF PROCESSING APPARATUS AND SYSTEMS THEREOF 审中-公开
    检测加工装置及其系统异常运行的方法

    公开(公告)号：US20080002832A1

    公开(公告)日：2008-01-03

    申请号：US11470469

    申请日：2006-09-06

    申请人： Jain-Hong Chen ,  Mu-Tsang Lin ,  W. L. Huang

    发明人： Jain-Hong Chen ,  Mu-Tsang Lin ,  W. L. Huang

    IPC分类号： H04R29/00

    CPC分类号： H01L21/67288 ,  G01H3/08 ,  H04R29/001

    摘要： A method for detecting abnormal operation of a manufacturing process, comprising the steps of: (a) detecting at least one acoustic signal created from a processing apparatus; (b) transforming the acoustic signal into a frequency spectrum; (c) comparing the frequency spectrum with a pre-determined frequency spectrum, and (d) generating a signal indicating an abnormal operation of the processing apparatus, if an amplitude of at least one first frequency of the frequency spectrum is substantially different from an amplitude of the same frequency of the pre-determined frequency spectrum.

    摘要翻译： 一种用于检测制造过程的异常操作的方法，包括以下步骤：（a）检测从处理设备产生的至少一个声信号; （b）将声信号变换成频谱; （c）将所述频谱与预定频谱进行比较，以及（d）产生指示所述处理装置的异常操作的信号，如果所述频谱的至少一个第一频率的振幅与振幅 具有相同频率的预定频谱。

    Temperature-sensing wafer position detection system and method
    7.
    发明授权
    Temperature-sensing wafer position detection system and method 失效

    公开(公告)号：US06980876B2

    公开(公告)日：2005-12-27

    申请号：US10789969

    申请日：2004-02-26

    申请人： Mu-Tsang Lin ,  Kong-Hsin Teng ,  Tien-Wen Wang ,  Jen-Hom Chen

    发明人： Mu-Tsang Lin ,  Kong-Hsin Teng ,  Tien-Wen Wang ,  Jen-Hom Chen

    IPC分类号： G06F19/00 ,  H01L21/00

    CPC分类号： H01L21/67259

    摘要： A temperature-sensing wafer position detection system and method which uses temperature to determine whether a wafer is properly positioned on a bake plate prior to commencement of a photolithography baking process, for example. The system includes a bake plate and a temperature-sensing apparatus which engages the bake plate and measures the change in temperature (ΔT) of the bake plate over a specified time interval to determine whether the wafer is properly or improperly positioned on the support. In the event that the ΔT of the bake plate is at least as great as a given temperature change threshold value over a specified time interval, this indicates that the wafer is properly positioned for processing.

    System and method to build, retrieve and track information in a knowledge database for trouble shooting purposes
    8.
    发明申请
    System and method to build, retrieve and track information in a knowledge database for trouble shooting purposes 审中-公开
    用于构建，检索和跟踪知识数据库中的信息以进行故障排除的系统和方法

    公开(公告)号：US20050283498A1

    公开(公告)日：2005-12-22

    申请号：US10873553

    申请日：2004-06-22

    申请人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Mu-Tsang Lin ,  Yi-Lin Huang ,  Chun-Yi Chen ,  Chi Wang

    发明人： Wen-Chang Kuo ,  Tien-Der Chiang ,  Chien-Chung Huang ,  Mu-Tsang Lin ,  Yi-Lin Huang ,  Chun-Yi Chen ,  Chi Wang

    IPC分类号： G06F17/30

    CPC分类号： G06F16/21

    摘要： A method of building a problem troubleshooting database for use in a semiconductor manufacturing system includes storing semiconductor manufacturing problem data in a problem troubleshooting database; storing cause data in the problem troubleshooting database, the cause data being associated with respective problem data; storing solution data in the problem troubleshooting database, the solution data being associated with respective semiconductor manufacturing problem data and cause data; evaluating the effectiveness of the solution data; and updating the solution data with information with respect to the effectiveness determined in the evaluating step.

    摘要翻译： 构建用于半导体制造系统的问题故障排除数据库的方法包括将半导体制造问题数据存储在问题故障排除数据库中; 将原因数据存储在问题故障排除数据库中，原因数据与相应的问题数据相关联; 将解决方案数据存储在问题故障排除数据库中，解决方案数据与相应的半导体制造问题数据相关联并导致数据; 评估解决方案数据的有效性; 以及关于在所述评估步骤中确定的有效性的信息来更新所述解决方案数据。

    Direct detection of dielectric etch system magnet driver and coil malfunctions
    9.
    发明授权
    Direct detection of dielectric etch system magnet driver and coil malfunctions 失效
    直接检测电介质蚀刻系统磁铁驱动器和线圈故障

    公开(公告)号：US06733617B2

    公开(公告)日：2004-05-11

    申请号：US09903130

    申请日：2001-07-11

    申请人： Mu-Tsang Lin ,  Tse-Lun Chang ,  Sen-Tay Chang ,  Yao-Ping Yang

    发明人： Mu-Tsang Lin ,  Tse-Lun Chang ,  Sen-Tay Chang ,  Yao-Ping Yang

    IPC分类号： H05H100

    CPC分类号： H01J37/32431

    摘要： The direct detection of dielectric etch system magnet driver and coil malfunctions is disclosed. A dielectric etch system includes a plasma chamber in which a semiconductor wafer is placed to remove dielectric therefrom, and a number of coils positioned around the chamber to excite the plasma. Magnet drivers of a magnet driver circuitry provide configurable preset current from a power source to the coils. Malfunction detection circuitry includes a number of comparators connected in parallel. Each comparator couples between one of the magnet drivers and one of the coils. A relay couples the comparators to ground, and turns off the power source when any of the comparators yields a substantially non-zero current, which indicates that either the driver or the coil coupled to the comparator is malfunctioning.

    摘要翻译： 公开了电介质蚀刻系统磁驱动器和线圈故障的直接检测。 电介质蚀刻系统包括等离子体室，其中放置半导体晶片以从其中除去电介质;以及多个线圈，位于室周围以激发等离子体。 磁铁驱动器电路的磁铁驱动器提供从电源到线圈的可配置的预设电流。 故障检测电路包括多个并联连接的比较器。 每个比较器耦合在一个磁体驱动器和一个线圈之间。 继电器将比较器耦合到地，并且当任何比较器产生基本非零电流时，关闭电源，这表示驱动器或耦合到比较器的线圈发生故障。

    Plasma etch method incorporating inert gas purge
    10.
    发明授权
    Plasma etch method incorporating inert gas purge 有权
    掺入惰性气体吹扫的等离子体蚀刻方法

    公开(公告)号：US06444587B1

    公开(公告)日：2002-09-03

    申请号：US09677531

    申请日：2000-10-02

    申请人： Mu-Tsang Lin ,  Pin-Yi Hsin

    发明人： Mu-Tsang Lin ,  Pin-Yi Hsin

    IPC分类号： H01L21302

    CPC分类号： H01L21/31116 ,  C23F4/00

    摘要： Within a method for forming a plasma etched layer, there is first provided a substrate. There is then formed over the substrate a microelectronic layer. There is then etched within a plasma reactor chamber, and while employing a plasma etch method, the microelectronic layer to form a plasma etched microelectronic layer. Finally, there is then purged the plasma reactor chamber with an inert purge gas, without subsequently evacuating the plasma reactor chamber, prior to removing the substrate having formed thereover the plasma etched microelectronic layer from the plasma reactor chamber. In an alternative there is purged a load lock chamber integral to the plasma reactor chamber with an inert purge gas, without subsequently evacuating the load lock chamber, prior to removing the substrate having formed thereover the plasma etched microelectronic layer from the load lock chamber.

    摘要翻译： 在形成等离子体蚀刻层的方法中，首先提供衬底。 然后在衬底上形成微电子层。 然后在等离子体反应器室内蚀刻，并且在采用等离子体蚀刻方法时，微电子层形成等离子体蚀刻的微电子层。 最后，在从等离子体反应器室除去形成在等离子体蚀刻的微电子层之上的衬底之前，用惰性吹扫气体吹扫等离子体反应器室，而不用随后抽空等离子体反应器室。 在替代方案中，在从负载锁定室移除其上形成有等离子体蚀刻的微电子层之上的衬底之后，用惰性吹扫气体清除与等离子体反应器腔一体的负载锁定室，而不后续地抽空负载锁定室。