公开(公告)号：US06654073B1

公开(公告)日：2003-11-25

申请号：US09650616

申请日：2000-08-30

申请人： Muneo Maruyama ,  Takahiko Watanabe ,  Hironori Kikkawa ,  Yuji Yamamoto ,  Mamoru Okamoto ,  Michiaki Sakamoto ,  Shinichi Nakata ,  Masanobu Hidehira ,  Yoshitaka Horie

发明人： Muneo Maruyama ,  Takahiko Watanabe ,  Hironori Kikkawa ,  Yuji Yamamoto ,  Mamoru Okamoto ,  Michiaki Sakamoto ,  Shinichi Nakata ,  Masanobu Hidehira ,  Yoshitaka Horie

IPC分类号： G02F11343

CPC分类号： G02F1/136213 ,  G02F1/136227

摘要： Band-shaped data lines are arranged in parallel with each other so as to cross address lines via a gate insulating film formed over the address lines. An upper insulating film is formed over the data lines, and pixel electrodes are formed on the upper insulating film. Storage capacitance section includes common electrode and storage capacitance electrode. The common electrode is extended from the address line of adjacent pixel region. The storage capacitance electrode sandwiches the gate insulating film with the common electrode to store capacitance therebetween. The storage capacitance electrodes and the pixel electrodes are connected to each other via conductive through hole piercing through the upper insulating film. Besides, the storage capacitance electrode, source electrode of the thin film transistor section and a wiring connecting them are integrally formed of the same metal films.

摘要翻译： 带状数据线彼此并联布置，以便经由形成在地址线上的栅极绝缘膜交叉地址线。 在数据线上形成上绝缘膜，在上绝缘膜上形成像素电极。 存储电容部分包括公共电极和存储电容电极。 公共电极从相邻像素区域的地址线延伸。 存储电容电极用公共电极夹住栅极绝缘膜，以在其间存储电容。 存储电容电极和像素电极通过穿过上绝缘膜的导电通孔相互连接。 此外，存储电容电极，薄膜晶体管部分的源电极和连接它们的布线由相同的金属膜一体地形成。

公开(公告)号：US06693697B2

公开(公告)日：2004-02-17

申请号：US10042144

申请日：2002-01-11

申请人： Michiaki Sakamoto ,  Yuji Yamamoto ,  Mamoru Okamoto ,  Shigeru Kimura ,  Shinichi Nakata ,  Shouichi Kuroha ,  Masanobu Hidehira ,  Yoshitaka Horie ,  Takayuki Ishino

发明人： Michiaki Sakamoto ,  Yuji Yamamoto ,  Mamoru Okamoto ,  Shigeru Kimura ,  Shinichi Nakata ,  Shouichi Kuroha ,  Masanobu Hidehira ,  Yoshitaka Horie ,  Takayuki Ishino

IPC分类号： G02F11333

CPC分类号： G02F1/136209 ,  G02F1/133514 ,  G02F1/136227

摘要： A liquid crystal display device is made up of a TFT substrate, an opposed substrate and a liquid crystal layer arranged between these substrates, in which the TFT substrate is provided with gate lines, data lines and TFT on its transparent insulative substrate, in addition, a passivation film is provided so as to cover them. A color filter is provided on the passivation film, and a black matrix is provided at corresponding area to above part of the TFT and to above part of the data line on the color filter. In addition, a first overcoat layer with film thickness of degree of 1 to 3 &mgr;m is provided so as to cover the black matrix. Further, a second overcoat layer with film thickness of approximate 0.5 &mgr;m is provided at the whole surface except for a contact hole. Furthermore, a pixel electrode is provided on pixel formation area on the second overcoat layer.

摘要翻译： 液晶显示装置由TFT基板，相对基板和布置在这些基板之间的液晶层构成，其中TFT基板在其透明绝缘基板上设置有栅极线，数据线和TFT，另外， 提供钝化膜以覆盖它们。 在钝化膜上提供滤色器，并且在TFT的上部的相应区域和彩色滤光片上的数据线的上方的一部分上设置黑矩阵。 此外，设置膜厚度为1〜3μm的第一覆盖层，以覆盖黑矩阵。 此外，除了接触孔之外，在整个表面上设置膜厚约为0.5μm的第二外涂层。 此外，像素电极设置在第二外涂层上的像素形成区域上。

公开(公告)号：US20050161777A1

公开(公告)日：2005-07-28

申请号：US11085116

申请日：2005-03-22

申请人： Yoshitaka Horie

发明人： Yoshitaka Horie

IPC分类号： H01L21/60 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L24/83 ,  H01L23/3107 ,  H01L23/49551 ,  H01L24/33 ,  H01L24/40 ,  H01L24/97 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A method of making a semiconductor device is provided. The method includes the following steps. First, a semiconductor chip is mounted on a lower conductor, with first solder material applied between the chip and the lower conductor. Then, an upper conductor is placed on the chip, with second solder material applied between the chip and the upper conductor. Then, the first and the second solder materials are heated up beyond their respective melting points. Finally, the first and the second solder materials are allowed to cool down, so that the first solder material solidifies earlier than the second solder material.

公开(公告)号：US07675144B2

公开(公告)日：2010-03-09

申请号：US11085116

申请日：2005-03-22

申请人： Yoshitaka Horie

发明人： Yoshitaka Horie

IPC分类号： H01L23/495

CPC分类号： H01L24/83 ,  H01L23/3107 ,  H01L23/49551 ,  H01L24/33 ,  H01L24/40 ,  H01L24/97 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A method of making a semiconductor device is provided. The method includes the following steps. First, a semiconductor chip is mounted on a lower conductor, with first solder material applied between the chip and the lower conductor. Then, an upper conductor is placed on the chip, with second solder material applied between the chip and the upper conductor. Then, the first and the second solder materials are heated up beyond their respective melting points. Finally, the first and the second solder materials are allowed to cool down, so that the first solder material solidifies earlier than the second solder material.

摘要翻译： 提供制造半导体器件的方法。 该方法包括以下步骤。 首先，将半导体芯片安装在下导体上，其中第一焊料材料施加在芯片和下导体之间。 然后，将上导体放置在芯片上，其中第二焊料材料施加在芯片和上导体之间。 然后，将第一和第二焊料材料加热超过它们各自的熔点。 最后，允许第一和第二焊料材料冷却，使得第一焊料材料比第二焊料材料早凝固。

公开(公告)号：US06650004B1

公开(公告)日：2003-11-18

申请号：US10111567

申请日：2002-04-26

申请人： Yoshitaka Horie ,  Masahide Maeda

发明人： Yoshitaka Horie ,  Masahide Maeda

IPC分类号： H01L23495

CPC分类号： H01L25/072 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L2224/16245 ,  H01L2224/33 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device (S1) includes a semiconductor chip (5), a chip-mounting internal lead (1) mounting the semiconductor chip (5), chip-connecting leads (2, 3) electrically connected to an upper surface of the semiconductor chip (5), and a rectangular resin package 7 housing the semiconductor chip (5) and the internal leads (1 to 3). The chip-mounting internal lead (1) has an end which is rectangular or substantially rectangular and extends along the length of the resin package (7).

摘要翻译： 半导体器件（S1）包括半导体芯片（5），安装半导体芯片（5）的芯片安装内部引线（1），与半导体芯片的上表面电连接的芯片连接引线（2,3） （5）和容纳半导体芯片（5）和内部引线（1至3）的矩形树脂封装7。 芯片安装内部引线（1）具有矩形或大致矩形并且沿着树脂封装（7）的长度延伸的端部。

公开(公告)号：US06897567B2

公开(公告)日：2005-05-24

申请号：US09917945

申请日：2001-07-31

申请人： Yoshitaka Horie

发明人： Yoshitaka Horie

IPC分类号： H01L21/60 ,  H01L23/31 ,  H01L23/495 ,  H01L23/48

CPC分类号： H01L24/83 ,  H01L23/3107 ,  H01L23/49551 ,  H01L24/33 ,  H01L24/40 ,  H01L24/97 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A method of making a semiconductor device is provided. The method includes the following steps. First, a semiconductor chip is mounted on a lower conductor, with first solder material applied between the chip and the lower conductor. Then, an upper conductor is placed on the chip, with second solder material applied between the chip and the upper conductor. Then, the first and the second solder materials are heated up beyond their respective melting points. Finally, the first and the second solder materials are allowed to cool down, so that the first solder material solidifies earlier than the second solder material.

摘要翻译： 提供制造半导体器件的方法。 该方法包括以下步骤。 首先，将半导体芯片安装在下导体上，其中第一焊料材料施加在芯片和下导体之间。 然后，将上导体放置在芯片上，其中第二焊料材料施加在芯片和上导体之间。 然后，将第一和第二焊料材料加热超过它们各自的熔点。 最后，允许第一和第二焊料材料冷却，使得第一焊料材料比第二焊料材料早凝固。

公开(公告)号：US06396555B1

公开(公告)日：2002-05-28

申请号：US09359356

申请日：1999-07-21

申请人： Yoshitaka Horie

发明人： Yoshitaka Horie

IPC分类号： G02F11343

CPC分类号： G02F1/134363

摘要： A liquid crystal display panel is provided with a transparent substrate, a thin film transistor provided on the transparent substrate, and a pixel electrode provided on the transparent substrate. A scanning line connected to a gate of the thin film transistor is provided on the transparent substrate. A voltage which controls the thin film transistor is applied to the scanning line from an external circuit. An opposite electrode connected to a source of the thin film transistor is provided on the transparent substrate. A potential difference between the opposite electrode and the pixel electrode is a voltage applied to a liquid crystal. A common electrode line connected to a drain of the thin film transistor is provided on the transparent substrate. A voltage which controls the potential of the opposite electrode is applied to the common electrode line from the external circuit.

摘要翻译： 液晶显示面板设置有透明基板，设置在透明基板上的薄膜晶体管和设置在透明基板上的像素电极。 连接到薄膜晶体管的栅极的扫描线设置在透明基板上。 控制薄膜晶体管的电压从外部电路施加到扫描线。 连接到薄膜晶体管的源极的相对电极设置在透明基板上。 相对电极和像素电极之间的电位差是施加到液晶的电压。 连接到薄膜晶体管的漏极的公共电极线设置在透明基板上。 控制对置电极的电位的电压从外部电路施加到公共电极线。