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    CHEMICAL SENSORS AND METHODS OF MAKING AND USING THE SAME
    3.
    发明申请
    CHEMICAL SENSORS AND METHODS OF MAKING AND USING THE SAME 审中-公开
    化学传感器及其使用方法

    公开(公告)号：US20150204835A1

    公开(公告)日：2015-07-23

    申请号：US14410902

    申请日：2012-06-27

    申请人： Liangming Wei ,  Yafei Zhang

    发明人： Liangming Wei ,  Yafei Zhang

    IPC分类号： G01N33/18

    CPC分类号： G01N33/1813 ,  G01N21/6428

    摘要： The present application relates to methods of making a chemical sensor including dispersing mesoporous silica structures, an organic solvent, and water to form a composition; and combining one or more chemical sensing molecules with the composition. In some embodiments, the composition includes not more than about 0.6 g of water relative to about 1 g of the mesoporous silica structures. In some embodiments, the chemical sensing molecules include a silane coupling group coupled to a chemical sensing group. Also discloses herein are chemical sensors and methods of using the chemical sensors. The chemical sensors may, in some embodiments, exhibit superior detection of one or more analytes.

    摘要翻译： 本申请涉及制造化学传感器的方法，包括分散介孔二氧化硅结构，有机溶剂和水以形成组合物; 并将一种或多种化学感测分子与组合物组合。 在一些实施方案中，组合物相对于约1g介孔二氧化硅结构包含不超过约0.6g的水。 在一些实施方案中，化学感测分子包括耦合到化学感测组的硅烷偶联基团。 本文还公开了使用化学传感器的化学传感器和方法。 在一些实施方案中，化学传感器可表现出对一种或多种分析物的优异检测。

    Method of and apparatus for synthesizing highly oriented, aligned carbon nanotubes from an organic liquid
    5.
    发明申请
    Method of and apparatus for synthesizing highly oriented, aligned carbon nanotubes from an organic liquid 有权
    从有机液体合成高定向取向碳纳米管的方法和装置

    公开(公告)号：US20100124526A1

    公开(公告)日：2010-05-20

    申请号：US12385184

    申请日：2009-04-01

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： D01F9/12 ,  B01J19/08 ,  C01B31/36

    CPC分类号： B82Y30/00 ,  B01J10/007 ,  B01J2219/00094 ,  B01J2219/0013 ,  B01J2219/00263 ,  B01J2219/0884 ,  B01J2219/0894 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/166 ,  C01B2202/08 ,  Y10S977/844

    摘要： A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate (3) having the buildup to a hydrogen plasma; and heating the substrate (3) exposed to the hydrogen plasma in the organic liquid (10) to a predetermined temperature. The synthesis apparatus comprises: a liquid chamber or tank (1) for an organic liquid; a water cooling means (2) for cooling the liquid tank (1) from its outside; a substrate holder (5) for holding a substrate (3), the holder having electrodes (4) for passing an electric current through the substrate (3); a condensing means (7) comprising water cooling tubes (6) for cooling and condensing vapor made from the organic liquid by its vaporization to return it to the liquid for return into the liquid tank (1); a valve (8) through which N2 gas is introduced; and a lid (9) that carries the substrate holder (5), the condensing means (7) and the valve (8). The organic liquid (10) is thus tightly sealed in the liquid tank (1) by the lid (9). This synthesis apparatus allows carbon nanotubes to be synthesized in large quantities, at low cost and in safety. Highly coaxially and densely oriented, aligned carbon nanotubes can be synthesized in the form of a bundle thereof, which when used in a variety of products brings about various excellent effects including extremely high usability.

    摘要翻译： 提供了能够以低成本和大量合成碳纳米管的方法，可用于实施该方法的装置，以及紧密地对准并牢固地结合到Si衬底并且垂直于其整个表面的碳纳米管。 通过在其上积聚由至少一种金属元素构成的薄膜或细小岛状颗粒的基板，由有机液体合成高取向的排列碳纳米管; 将具有积聚的衬底（3）暴露于氢等离子体; 以及将暴露于有机液体（10）中的氢等离子体的衬底（3）加热至预定温度。 合成装置包括：用于有机液体的液体室或罐（1）; 用于从其外部冷却液体罐（1）的水冷装置（2）; 用于保持基板（3）的基板保持器（5），所述保持器具有用于使电流通过所述基板（3）的电极（4）; 冷凝装置（7），包括水冷却管（6），用于通过其蒸发冷却和冷凝由有机液体制成的蒸汽，以将其返回到液体以返回到液体箱（1）中; 引入N 2气体的阀（8）; 以及承载基板保持件（5），冷凝装置（7）和阀（8）的盖（9）。 有机液体（10）因此通过盖（9）紧密地密封在液体罐（1）中。 该合成装置允许以低成本和安全性大量合成碳纳米管。 高度同轴且致密定向的碳纳米管可以以其束的形式合成，当用于各种产品时，可以产生包括极高的可用性的各种优异的效果。

    3C-SiC nanowhisker and synthesizing method of the same
    6.
    发明申请
    3C-SiC nanowhisker and synthesizing method of the same 失效
    3C-SiC纳米晶须及其合成方法

    公开(公告)号：US20080003162A1

    公开(公告)日：2008-01-03

    申请号：US11648569

    申请日：2007-01-03

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： C01B31/36

    CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

    摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

    摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

    Protection of antivirus daemon in a computer
    7.
    发明授权
    Protection of antivirus daemon in a computer 有权

    公开(公告)号：US10990673B1

    公开(公告)日：2021-04-27

    申请号：US16422550

    申请日：2019-05-24

    申请人： Chuan Jiang ,  Xilin Li ,  Yafei Zhang

    发明人： Chuan Jiang ,  Xilin Li ,  Yafei Zhang

    IPC分类号： G06F21/56 ,  G06F21/52

    摘要： A method protects a daemon in an operating system of a host computer. The operating system detects that there is an access of a plist file of a daemon by a process in the computer. If so, then it executes a callback function registered for the plist file. The callback function sends to a kernel extension a notification of the attempted access. The kernel extension returns a value to the operating system indicating that the access should be denied. The operating system denies access to the plist file of the daemon by the process. The extension may also notify an application which prompts the user for instruction. The kernel extension also protects itself by executing its exit function when a command is given to unload the extension, and the exit function determines whether or not the command is invoked by an authorized application, such as by checking a flag.

    3C-SiC nanowhisker
    9.
    发明授权
    3C-SiC nanowhisker 失效
    3C-SiC纳米晶须

    公开(公告)号：US07521034B2

    公开(公告)日：2009-04-21

    申请号：US11648569

    申请日：2007-01-03

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： C01B31/36

    CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

    摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

    摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

    3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker
    10.
    发明授权
    3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker 失效
    3C-SIC纳米晶须及其合成方法和3C-SIC纳米晶须

    公开(公告)号：US07364714B2

    公开(公告)日：2008-04-29

    申请号：US10481578

    申请日：2002-06-21

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： C01B31/36

    CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

    摘要： 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

    摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。