RADIO-FREQUENCY MODULE AND COMMUNICATION APPARATUS

    公开(公告)号:US20230143170A1

    公开(公告)日:2023-05-11

    申请号:US18149748

    申请日:2023-01-04

    Inventor: Koji FURUTANI

    CPC classification number: H01Q5/335 H01Q1/38 H01Q1/422 H01Q1/2283

    Abstract: A radio-frequency module includes a multilayer substrate, a first semiconductor device, and a second semiconductor device. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first semiconductor device includes a first power amplifier circuit. The second semiconductor device includes at least one of a low-noise amplifier circuit, a switching circuit, or a control circuit. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face.

    DIRECTIONAL COUPLER, HIGH-FREQUENCY MODULE, AND COMMUNICATION APPARATUS

    公开(公告)号:US20230208003A1

    公开(公告)日:2023-06-29

    申请号:US18057951

    申请日:2022-11-22

    Inventor: Koji FURUTANI

    CPC classification number: H01P5/18

    Abstract: A directional coupler includes a main line, a first sub-line, a second sub-line, a termination circuit, a selector switch, and a short-circuiting switch. The termination circuit terminates at least one of the first sub-line and the second sub-line. The selector switch connects the first sub-line and the termination circuit in a first mode and connects the second sub-line and the termination circuit in a second mode. The short-circuiting switch short-circuits both ends (a first end and a second end) of the second sub-line in the first mode.

    RADIO-FREQUENCY MODULE AND COMMUNICATION APPARATUS

    公开(公告)号:US20230155620A1

    公开(公告)日:2023-05-18

    申请号:US18157871

    申请日:2023-01-23

    Inventor: Koji FURUTANI

    CPC classification number: H04B1/38 H03F3/245 H03F2200/294 H03F2200/451

    Abstract: A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, and a metal layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The metal layer is disposed between the first semiconductor device and the second semiconductor device so as to overlie the first recess.

    DIRECTIONAL COUPLER
    5.
    发明申请

    公开(公告)号:US20230113980A1

    公开(公告)日:2023-04-13

    申请号:US17819140

    申请日:2022-08-11

    Inventor: Koji FURUTANI

    Abstract: A directional coupler includes a substrate, a main line, a first sub-line, and a ground conductor. The main line includes a first conductor line and a second conductor line electrically connected to each other. The first sub-line includes a third conductor line. The first conductor line and the second conductor line are able to be electromagnetically coupled to the third conductor line. The first conductor line has a first edge and a second edge. The second conductor line has a third edge and a fourth edge. The third conductor line has a fifth edge and a sixth edge. The first conductor line, the second conductor line, and the third conductor line are arranged in such a manner that the first edge, the fifth edge, the third edge, the second edge, the sixth edge, and the fourth edge are arranged in this order when the substrate is viewed in plan.

    MODULE
    6.
    发明申请
    MODULE 有权

    公开(公告)号:US20210144880A1

    公开(公告)日:2021-05-13

    申请号:US17151962

    申请日:2021-01-19

    Inventor: Koji FURUTANI

    Abstract: A module includes a substrate, which has a polygonal shape in a plan view, an electronic component and an electronic component, which are mounted on a main surface of the substrate, and side electrodes, which are provided on at least two side surfaces of a plurality of side surfaces that form the polygonal shape of the substrate. A conductor film coupled to the electronic component and a conductor film coupled to the electronic component are provided on the substrate. The conductor film extends to reach a side surface of the at least two side surfaces to be coupled to a side electrode provided on the side surface. The conductor film extends to reach a side surface of the at least two side surfaces, which is different from the side surface, to be coupled to a side electrode provided on the side surface.

    DIRECTIONAL COUPLER, HIGH-FREQUENCY MODULE, AND COMMUNICATION DEVICE

    公开(公告)号:US20230216171A1

    公开(公告)日:2023-07-06

    申请号:US18060624

    申请日:2022-12-01

    Inventor: Koji FURUTANI

    CPC classification number: H01P5/188

    Abstract: A directional coupler includes a main line, sub lines, and a multilayer substrate. The multilayer substrate includes dielectric layers. The multilayer substrate has a first and a second principal surface. The main line, the first, second, and third sub lines are each formed in a looped shape in plan view from a thickness direction of the multilayer substrate, and are provided to different dielectric layers among the dielectric layers. The first, second, and third sub lines have first distances different from each other. Among the first, second sub line, and third sub lines, the longest sub line having the longest first distance and the shortest sub line having the shortest first distance are disposed on the first principal surface of the main line, and the intermediate sub line having the intermediate first distance is disposed on the second principal surface of the main line.

    RADIO-FREQUENCY MODULE AND COMMUNICATION APPARATUS

    公开(公告)号:US20230163464A1

    公开(公告)日:2023-05-25

    申请号:US18158106

    申请日:2023-01-23

    Inventor: Koji FURUTANI

    CPC classification number: H01Q5/335 H01Q1/2283 H01Q1/422

    Abstract: A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, a first mold layer, and a second mold layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first mold layer seals the first semiconductor device. The second mold layer seals the second semiconductor device. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The first mold layer and the second mold layer are made of different materials.

    RADIO-FREQUENCY MODULE AND COMMUNICATION APPARATUS

    公开(公告)号:US20230155281A1

    公开(公告)日:2023-05-18

    申请号:US18157177

    申请日:2023-01-20

    Inventor: Koji FURUTANI

    CPC classification number: H01Q1/526 H01Q1/2283 H01Q5/50

    Abstract: A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, a mold layer, and a shield layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The mold layer seals at least the second semiconductor device. The shield layer 80 covers the mold layer. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The mold layer does not cover a top face of the second semiconductor device.

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