公开(公告)号：US20150069882A1

公开(公告)日：2015-03-12

申请号：US14541180

申请日：2014-11-14

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Keiichi UMEDA ,  Ryo NAKAGAWA ,  Atsushi TANAKA

IPC: H03H9/02 ,  H01L41/16 ,  H01L41/047

CPC classification number: H03H9/02543 ,  H01L41/047 ,  H01L41/16 ,  H03H9/02574 ,  H03H9/0296

Abstract: A surface acoustic wave device includes a high acoustic velocity film in which a transversal wave propagates at a higher acoustic velocity than in a ScAlN film laminated on a substrate made of silicon or glass. The ScAlN film is laminated on the high acoustic velocity film, and IDT electrodes are laminated on the ScAlN film.

Abstract translation: 表面声波装置包括高音速膜，其中横向波以比在由硅或玻璃制成的基板上层叠的ScAlN膜更高的声速传播。 将ScAlN膜层叠在高声速膜上，将IDT电极层叠在ScAlN膜上。

公开(公告)号：US20190238996A1

公开(公告)日：2019-08-01

申请号：US16377921

申请日：2019-04-08

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Keiichi UMEDA ,  Takaaki MIZUNO

IPC: H04R17/02 ,  H03H9/17 ,  H03H9/02 ,  H03H3/02 ,  H01L41/316 ,  H04R17/10 ,  H01L41/257 ,  H01L41/187 ,  H01L41/113 ,  H01L41/09

CPC classification number: H04R17/02 ,  H01L41/09 ,  H01L41/113 ,  H01L41/1136 ,  H01L41/1138 ,  H01L41/187 ,  H01L41/257 ,  H01L41/316 ,  H03H3/02 ,  H03H9/02574 ,  H03H9/173 ,  H03H9/174 ,  H04R17/10 ,  H04R31/00

Abstract: A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAIN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.

公开(公告)号：US20130127300A1

公开(公告)日：2013-05-23

申请号：US13677347

申请日：2012-11-15

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Keiichi UMEDA ,  Takashi MIYAKE

IPC: H01L41/18

CPC classification number: H01L41/18 ,  H01L41/187 ,  H01L41/316 ,  H03H3/04 ,  H03H9/02015 ,  H03H9/02157 ,  H03H9/173 ,  H03H9/175 ,  H03H2003/021 ,  H03H2003/025

Abstract: A piezoelectric thin-film resonator includes a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that the concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film; a first electrode; a second electrode facing the first electrode across the piezoelectric thin film; and a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes.

Abstract translation: 压电薄膜谐振器包括压电薄膜，其包括含有氮化铝的Sc，并且其浓度分布使得Sc的浓度在压电薄膜的厚度方向上不均匀; 第一电极; 面对跨越压电薄膜的第一电极的第二电极; 以及支撑由压电薄膜和第一和第二电极限定的压电振动部分的基板。

公开(公告)号：US20150287905A1

公开(公告)日：2015-10-08

申请号：US14716974

申请日：2015-05-20

Applicant: Murata Manufacturing Co., Ltd. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiichi UMEDA ,  Atsushi HONDA ,  Atsushi TANAKA ,  Masashi OMURA ,  Morito AKIYAMA

IPC: H01L41/18 ,  C23C14/06 ,  C23C14/34 ,  H01L41/316

CPC classification number: H01L41/18 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/34 ,  C30B23/025 ,  C30B29/403 ,  H01L41/187 ,  H01L41/316 ,  H03H9/02015 ,  H03H9/02574

Abstract: A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of BxAl1-xN (0

Abstract translation: 实现高声速的压电元件包括​​含硅衬底和压电层。 压电层设置在含硅衬底上。 至少在与含硅衬底相反的一侧上的压电层的表面层由BxAl1-xN（0

公开(公告)号：US20140078640A1

公开(公告)日：2014-03-20

申请号：US14086639

申请日：2013-11-21

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Keiichi UMEDA

IPC: H01B1/02 ,  C23C14/34

CPC classification number: H01B1/02 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00666 ,  B81C1/00698 ,  B81C2201/017 ,  B81C2201/0181 ,  C23C14/025 ,  C23C14/165 ,  C23C14/34 ,  H01G4/33 ,  H01G5/16 ,  H03H9/131 ,  H03H9/173 ,  H03H9/2457 ,  H03H2003/021 ,  H03H2003/0428 ,  H03H2009/02291

Abstract: In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device including a thin film electrode that has an underlayer and a main electrode layer formed on the underlayer. The underlayer is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer is formed of tungsten having a crystalline structure with a wavy-like surface morphology.

Abstract translation: 在包括具有由钨形成的主电极层的薄膜电极的薄膜器件中，实现了具有低电阻率的薄膜电极。 提供了一种薄膜器件，其包括具有形成在底层上的底层和主电极层的薄膜电极。 底层由具有波浪形表面形态的晶体结构的钛 - 钨合金形成，并且主电极层由具有波状表面形态的晶体结构的钨形成。