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    Substrate layer cutting device and method
    1.
    发明授权
    Substrate layer cutting device and method 有权
    基材层切割装置及方法

    公开(公告)号：US07406994B2

    公开(公告)日：2008-08-05

    申请号：US11668799

    申请日：2007-01-30

    申请人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

    发明人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

    IPC分类号： B32B38/10

    CPC分类号： H01L21/67092 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10S156/921 ,  Y10T83/7607 ,  Y10T83/7667 ,  Y10T156/1142 ,  Y10T156/1179 ,  Y10T156/1967 ,  Y10T156/1983

    摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

    摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 该装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的位置保持在可移动支撑件上。 提供具有至少一个叶片的切割机构用于接触基底并在其中引入切割波。 切割机构与定位构件可操作地相关联，使得至少一个叶片接触环形凹口，定位构件防止基底移动，并且可移动支撑件远离基底移动，以允许分裂波将基底 在切口处形成第一和第二部分，并且沿着弱化区域从基板分离层。

    Substrate layer cutting device and method
    2.
    发明授权
    Substrate layer cutting device and method 有权
    基材层切割装置及方法

    公开(公告)号：US07189304B2

    公开(公告)日：2007-03-13

    申请号：US10681566

    申请日：2003-10-07

    申请人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

    发明人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

    IPC分类号： B32B38/10

    CPC分类号： H01L21/67092 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10S156/921 ,  Y10T83/7607 ,  Y10T83/7667 ,  Y10T156/1142 ,  Y10T156/1179 ,  Y10T156/1967 ,  Y10T156/1983

    摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

    摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 切割装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的预定位置保持在支撑件上。 该装置还包括切割装置，该切割装置具有至少一个叶片，用于接触基底并用于将基本的分裂波引入基片。 切割装置与定位构件可操作地相关联，使得至少一个叶片接触环形凹口，并且定位构件防止基底移动。 所述至少一个叶片产生足够强度的分裂波，以将所述切口处的所述基底分成第一和第二部分，并且沿着所述弱化区域从所述基底分离所述层。

    SUBSTRATE LAYER CUTTING DEVICE AND METHOD
    3.
    发明申请
    SUBSTRATE LAYER CUTTING DEVICE AND METHOD 有权
    衬底层切割装置及方法

    公开(公告)号：US20070122926A1

    公开(公告)日：2007-05-31

    申请号：US11668799

    申请日：2007-01-30

    申请人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cecile Berne ,  Olivier Rayssac

    发明人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cecile Berne ,  Olivier Rayssac

    IPC分类号： H01L21/00 ,  B29C63/00

    CPC分类号： H01L21/67092 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10S156/921 ,  Y10T83/7607 ,  Y10T83/7667 ,  Y10T156/1142 ,  Y10T156/1179 ,  Y10T156/1967 ,  Y10T156/1983

    摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

    摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 该装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的位置保持在可移动支撑件上。 提供具有至少一个叶片的切割机构用于接触基底并在其中引入切割波。 所述切割机构与所述定位构件可操作地相关联，使得所述至少一个叶片接触所述环形切口，所述定位构件防止所述基板移动，并且所述可移动支撑件移动离开所述基板，以允许所述切割波将所述基板 在切口处形成第一和第二部分，并且沿着弱化区域从基板分离层。

    Process and apparatus for implanting particles in a solid
    7.
    发明授权
    Process and apparatus for implanting particles in a solid 失效
    用于将颗粒植入固体的方法和设备

    公开(公告)号：US4585945A

    公开(公告)日：1986-04-29

    申请号：US559439

    申请日：1983-12-08

    申请人： Michel Bruel ,  Alain Soubie ,  Philippe Spinelli

    发明人： Michel Bruel ,  Alain Soubie ,  Philippe Spinelli

    IPC分类号： H01J37/317 ,  H01L21/265

    CPC分类号： H01J37/3171

    摘要： In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently high energy level to penetrate the same. The secondary particles are in the gaseous state, the gas occupying an area facing the target.The apparatus for implanting particles in a solid has a target support and a solid target in a vacuum enclosure. It also has a source of high-energy primary particles, which supplies a substantially parallel beam thereof, a source of the secondary particles to be implanted in the target, a means for confining the secondary particles and communicating with the secondary particle source and having a primary opening for receiving the primary particle beam and a secondary opening for ejecting the secondary recoil particles towards the target.

    摘要翻译： 在将颗粒植入固体中的过程中，其中产生基本上平行的高能一次粒子束，次级粒子放置在后者的路径中，并且通过与初级粒子的相互作用以足够高的能量朝向靶突出 水平渗透相同。 次级颗粒处于气态，气体占据面向目标的区域。 用于将颗粒植入固体的装置在真空封壳中具有靶载体和固体靶。 它还具有高能一次粒子的来源，其提供基本上平行的束，待注入到靶中的二次粒子的源，用于限制二次粒子并与二次粒子源连通的装置，并具有 用于接收初级粒子束的初级开口和用于将二次反冲颗粒朝向靶喷射的次级开口。

    Methods for preparing a bonding surface of a semiconductor wafer
    9.
    发明授权
    Methods for preparing a bonding surface of a semiconductor wafer 有权
    制备半导体晶片的接合表面的方法

    公开(公告)号：US07645392B2

    公开(公告)日：2010-01-12

    申请号：US11472665

    申请日：2006-06-21

    申请人： Corinne Maunand Tussot ,  Christophe Maleville ,  Hubert Moriceau ,  Alain Soubie

    发明人： Corinne Maunand Tussot ,  Christophe Maleville ,  Hubert Moriceau ,  Alain Soubie

    IPC分类号： B44C1/22

    CPC分类号： H01L21/76254

    摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.

    摘要翻译： 一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。 该方法包括用NH 4 OH / H 2 O 2溶液处理氧化表面，处理参数足以从晶片表面蚀刻约大约至大约120埃，然后在低于约50℃的温度下用盐酸处理蚀刻的表面 持续时间少于约10分钟以从氧化表面除去分离的颗粒。 该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。 该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

    Methods for preparing a bonding surface of a semiconductor wafer
    10.
    发明申请
    Methods for preparing a bonding surface of a semiconductor wafer 有权
    制备半导体晶片的接合表面的方法

    公开(公告)号：US20060273068A1

    公开(公告)日：2006-12-07

    申请号：US11472665

    申请日：2006-06-21

    申请人： Corinne Maunand Tussot ,  Christophe Maleville ,  Hubert Moriceau ,  Alain Soubie

    发明人： Corinne Maunand Tussot ,  Christophe Maleville ,  Hubert Moriceau ,  Alain Soubie

    IPC分类号： B44C1/22

    CPC分类号： H01L21/76254

    摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.

    摘要翻译： 一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。 该方法包括在处理参数下处理含有NH 4 OH / H 2 O 2 O 2的溶液的氧化表面，所述处理参数足以蚀刻至约 约120埃，然后在低于约50℃的温度下用盐酸物质处理蚀刻表面，持续时间小于约10分钟以从氧化表面除去分离的颗粒。 该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。 该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。