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    Method of fabricating organic light emitting device
    7.
    发明申请
    Method of fabricating organic light emitting device 审中-公开
    制造有机发光装置的方法

    公开(公告)号：US20090186148A1

    公开(公告)日：2009-07-23

    申请号：US12219219

    申请日：2008-07-17

    申请人： Yu-Jin Kim ,  Jun-hee Choi ,  Andrei Zoulkarneev ,  Tae-yong Noh ,  Byoung-ki Choi ,  Myeong-suk Kim ,  Dong-woo Shin ,  Tae-woo Lee ,  Yu-ri Choi

    发明人： Yu-Jin Kim ,  Jun-hee Choi ,  Andrei Zoulkarneev ,  Tae-yong Noh ,  Byoung-ki Choi ,  Myeong-suk Kim ,  Dong-woo Shin ,  Tae-woo Lee ,  Yu-ri Choi

    IPC分类号： B05D5/12

    CPC分类号： H01L51/0013 ,  H01L27/32 ,  H01L51/0011

    摘要： In a method of forming a pattern of an organic light emitting device (OLED), an organic material is evaporated in a predetermined pattern by using a pre-patterned heating element, and the evaporated organic material is transferred to a substrate where the OLED is formed. The method includes preparing a template having a heating element in a pattern corresponding to a multilayered structure of an OLED including a plurality of functional layers; forming an organic layer on the heating element; drawing a substrate for the OLED near to the heating element of the template; and transferring the organic layer on the heating element to the substrate by evaporating the organic layer using the heating element.

    摘要翻译： 在形成有机发光器件（OLED）的图案的方法中，通过使用预先图案化的加热元件以预定图案蒸发有机材料，并将蒸发的有机材料转移到形成有OLED的基板 。 该方法包括制备具有对应于包括多个功能层的OLED的多层结构的图案的加热元件的模板; 在加热元件上形成有机层; 在模板的加热元件附近绘制用于OLED的衬底; 并且通过使用加热元件蒸发有机层，将加热元件上的有机层转移到基板。

    Stacked trench capacitor and a method for making the same
    9.
    发明授权
    Stacked trench capacitor and a method for making the same 失效
    堆叠沟槽电容器及其制造方法

    公开(公告)号：US5343354A

    公开(公告)日：1994-08-30

    申请号：US74892

    申请日：1993-06-11

    申请人： Tae-woo Lee ,  Seon-jun Kim ,  Yang-ku Lee

    发明人： Tae-woo Lee ,  Seon-jun Kim ,  Yang-ku Lee

    IPC分类号： H01L27/108 ,  H01L29/94 ,  H01G4/10

    CPC分类号： H01L29/945 ,  H01L27/10835

    摘要： A stacked trench capacitor including a first trench formed in a semiconductor substrate, an insulating material, preferably BPSG, substantially filling the first trench to thereby define an isolation region of the substrate, a second trench formed in the first trench, the second trench being much narrower and shallower than the first trench, a storage electrode formed on the sidewalls and bottom surface of the second trench, a thin dielectric film formed on the storage electrode, and a plate electrode formed on the thin dielectric film. In a preferred embodiment, the isolation region serves to separate and electrically isolate adjacent memory cells of a semiconductor memory device, each of the memory cells including a MOSFET transistor and a stacked trench capacitor constructed as described above. An impurity region is formed in the substrate adjacent an outer sidewall of the second trench to a depth preferably substantially equal to that of the second trench, the conductivity type of the impurity region being opposite that of the substrate. An upper portion of the impurity region preferably serves as the source region of the MOSFET transistor of the memory cell.

    摘要翻译： 一种叠层沟槽电容器，包括形成在半导体衬底中的第一沟槽，优选为BPSG的绝缘材料，基本上填充所述第一沟槽，从而限定所述衬底的隔离区，形成在所述第一沟槽中的第二沟槽， 比第一沟槽窄且浅，形成在第二沟槽的侧壁和底表面上的存储电极，形成在存储电极上的薄电介质膜和形成在薄介电膜上的板电极。 在优选实施例中，隔离区域用于分离和电隔离半导体存储器件的相邻存储单元，每个存储器单元包括MOSFET晶体管和如上所述构成的层叠沟槽电容器。 在衬底中邻近第二沟槽的外侧壁形成杂质区，其深度优选地基本上等于第二沟槽的深度，杂质区的导电类型与衬底相反。 杂质区的上部优选用作存储单元的MOSFET晶体管的源极区。