摘要:
An electrode catalyst for a fuel cell including a carbon-based carrier and an active metal supported in the carrier, for example, an electrode catalyst for a fuel cell includes a carrier and an active metal supported in the carrier, wherein the electrode catalyst has an X value of 95 to 100% in Equation 1. X(%)=(XPS measurement value)/(TGA measurement value)×100 [Equation 1] wherein, the XPS measurement value represents a quantitative amount of the active metal present on a surface of the electrode catalyst, the TGA measurement value represents the XPS measurement value using a monochromated Al Kα-ray, which is the quantitative amount of total active metal supported in the catalyst.
摘要:
A catalyst for a fuel cell including a carrier and an active metal dispersion that is supported in the carrier is disclosed. The catalyst may have a dispersity (Dp) represented by General Formula 1 and that ranges from between about 0.01 to about 1.0. Dispersity(Dp)={X−X10/(X1−B)}*(B/X)2 [General Formula 1] In the General Formula 1, X, X10, X1, and B are defined the same as described in the specification. A membrane-electrode assembly, and a fuel cell system having the catalyst are also disclosed.
摘要:
An electrode for a fuel cell is disclosed. The electrode may include an electrode substrate with a conductive substrate, carbon particles, and a catalyst layer disposed on the electrode substrate. The electrode substrate may include a pore having an average diameter of about 20 μm to about 40 μm and porosity of about 30 volume % to about 80 volume % based on the total volume of the electrode substrate. A membrane-electrode assembly including the electrode and a fuel cell system including the membrane electrode assembly are also disclosed.
摘要:
A method and an apparatus for feeding back channel information in a wireless communication system are provided. The method includes calculating an average Signal to Interference and Noise Ratio (SINR), determining a Modulation and Coding Scheme (MCS) level corresponding to the average SINR, determining an MCS level meeting a predefined condition among MCS levels equal to or less than the determined MCS level, and reporting a channel quality indicator representing the determined MCS level to a base station.
摘要:
A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.
摘要:
A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
摘要:
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.
摘要:
A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.