公开(公告)号：US08889515B2

公开(公告)日：2014-11-18

申请号：US13337443

申请日：2011-12-27

申请人： Yun-Hyuck Ji ,  Woo-Young Park

发明人： Yun-Hyuck Ji ,  Woo-Young Park

IPC分类号： H01L21/8234 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/28 ,  H01L21/265 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/70 ,  H01L27/088 ,  H01L29/51

CPC分类号： H01L27/0922 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode layer in the first region has a work function lower than a work function of a metal electrode formed from the metal electrode layer in the second region and a nitrogen concentration of the metal electrode of the first region is smaller than a nitrogen concentration of the metal electrode of the second region.

摘要翻译： 一种半导体器件包括：包括第一区域和第二区域的衬底;形成在衬底上的栅极电介质层;以及形成在栅极介电层上并包含碳和氮的化合物的金属电极层，其中由 第一区域中的金属电极层具有比在第二区域中由金属电极层形成的金属电极的功函数低的作用函数，并且第一区域的金属电极的氮浓度小于 第二区域的金属电极。

公开(公告)号：US08653611B2

公开(公告)日：2014-02-18

申请号：US13027379

申请日：2011-02-15

申请人： Yun-Hyuck Ji ,  Tae-Yoon Kim ,  Seung-Mi Lee ,  Woo-Young Park

发明人： Yun-Hyuck Ji ,  Tae-Yoon Kim ,  Seung-Mi Lee ,  Woo-Young Park

IPC分类号： H01L29/51

CPC分类号： H01L21/283 ,  H01L21/823462 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.

摘要翻译： 半导体器件包括形成在衬底上并具有高介电常数的栅极绝缘层，形成在栅极绝缘层上的栅极电极和形成在衬底和栅极绝缘层之间的功函数控制层，并且引起功函数偏移 栅电极。

公开(公告)号：US20120152171A1

公开(公告)日：2012-06-21

申请号：US13393498

申请日：2010-08-24

申请人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

发明人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

IPC分类号： C23C16/455

CPC分类号： C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/68764 ,  H01L21/68771

摘要： Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

摘要翻译： 提供一种使用其的气体注入装置和基板处理装置。 气体注入装置包括多个气体注入单元，其设置在可旋转地设置在腔室内以支撑多个基板的基板支撑部分上方，多个气体注入单元相对于基板的中心点沿圆周方向设置 支撑部分将工艺气体注入到基底上。 其中，所述多个气体注入单元中的每一个包括顶板，其中设置有引入所述处理气体的入口和设置在所述顶板下方的注入板，以在所述注射板和所述顶板之间沿着 注入板在气体扩散空间下方具有多个气体注入孔，以将通过入口引入并在气体扩散空间中扩散的工艺气体注入到基板上。 在多个气体注入单元的至少一个气体注入单元中，处理气体在多个点被引入到气体扩散空间中。

公开(公告)号：USD590486S1

公开(公告)日：2009-04-14

申请号：US29280372

申请日：2007-05-24

申请人： Woo Young Park

设计人： Woo Young Park

公开(公告)号：US09741044B2

公开(公告)日：2017-08-22

申请号：US13524936

申请日：2012-06-15

申请人： Kyoung Min Park ,  Ji Young Park ,  Woo Young Park ,  Tae Hun Kim

发明人： Kyoung Min Park ,  Ji Young Park ,  Woo Young Park ,  Tae Hun Kim

IPC分类号： G06Q30/02

CPC分类号： G06Q30/02 ,  Y04S50/14

摘要： The demand response system comprises an automatic meter reading (AMR) unit to generate metering information. The demand response system comprises a multiple utility complex unit (MUC) which provides DR information based on the metering information and manages utility supply schedule in combination. The demand response system comprises an eco index (EI) calculation unit which calculates an eco index based on the metering information. The demand response system comprises a demand response (DR) unit which obtains the CBL information based on the metering information and computes a the DR bill by using the CBL data, the DR information and EI obtained, and outputs the DR bill. The demand response system comprises a smart portal (SP) unit which provides users with the calculated DR bill. According to the disclosure, the demand response system can provide environmental and social information, in addition to economic information.

公开(公告)号：US09732424B2

公开(公告)日：2017-08-15

申请号：US13393498

申请日：2010-08-24

申请人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

发明人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

IPC分类号： C23C16/455 ,  H01L21/687

CPC分类号： C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/68764 ,  H01L21/68771

摘要： Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

公开(公告)号：US09431402B2

公开(公告)日：2016-08-30

申请号：US13468091

申请日：2012-05-10

申请人： Yun-Hyuck Ji ,  Kwan-Woo Do ,  Beom-Yong Kim ,  Seung-Mi Lee ,  Woo-Young Park

发明人： Yun-Hyuck Ji ,  Kwan-Woo Do ,  Beom-Yong Kim ,  Seung-Mi Lee ,  Woo-Young Park

IPC分类号： H01L21/336 ,  H01L27/108 ,  H01L21/20 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L27/10808 ,  H01L21/2018 ,  H01L27/10873 ,  H01L27/10885 ,  H01L29/66666 ,  H01L29/7827

摘要： A method for fabricating a semiconductor device includes: forming an insulation layer over a semiconductor substrate; forming a first conductive layer over the insulation layer; forming a plurality of buried bit lines and insulation layer patterns isolated by a plurality of trenches, wherein the plurality of trenches are formed by etching the first conductive layer and the insulation layer; forming a sacrificial layer to gap-fill the trenches; forming a second conductive layer over the buried bit lines and the sacrificial layer; and forming a plurality of pillars over each of the buried bit lines by etching the second conductive layer.

摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成绝缘层; 在所述绝缘层上形成第一导电层; 形成由多个沟槽隔离的多个掩埋位线和绝缘层图案，其中所述多个沟槽通过蚀刻所述第一导电层和所述绝缘层而形成; 形成牺牲层以间隙填充沟槽; 在所述掩埋位线和所述牺牲层上形成第二导电层; 以及通过蚀刻所述第二导电层在每个所述掩埋位线上形成多个柱。

公开(公告)号：US20130277636A1

公开(公告)日：2013-10-24

申请号：US13596637

申请日：2012-08-28

申请人： Kee-Jeung Lee ,  Woo-Young Park

发明人： Kee-Jeung Lee ,  Woo-Young Park

IPC分类号： H01L21/02 ,  H01L47/00

CPC分类号： H01L45/08 ,  G11C13/0007 ,  H01L27/2463 ,  H01L27/2472 ,  H01L27/249 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675 ,  H01L45/1683

摘要： A method for fabricating a variable resistance memory device includes forming a first electrode, forming a first metal oxide layer which satisfies chemical stoichiometry over the first electrode, forming a second metal oxide layer which is lower in oxygen content than the first metal oxide layer by reducing a part of the first metal oxide layer, and forming a second electrode over the second metal oxide layer.

摘要翻译： 一种可变电阻存储器件的制造方法，包括：形成第一电极，在第一电极上形成满足化学计量学的第一金属氧化物层，通过还原形成氧含量低于第一金属氧化物层的第二金属氧化物层 第一金属氧化物层的一部分，并且在第二金属氧化物层上形成第二电极。

公开(公告)号：US20130244394A1

公开(公告)日：2013-09-19

申请号：US13494400

申请日：2012-06-12

申请人： Beom-Yong KIM ,  Kee-Jeung LEE ,  Yun-Hyuck JI ,  Seung-Mi LEE ,  Jae-Hyoung KOO ,  Kwan-Woo DO ,  Kyung-Woong PARK ,  Ji-Hoon AHN ,  Woo-Young PARK

发明人： Beom-Yong KIM ,  Kee-Jeung LEE ,  Yun-Hyuck JI ,  Seung-Mi LEE ,  Jae-Hyoung KOO ,  Kwan-Woo DO ,  Kyung-Woong PARK ,  Ji-Hoon AHN ,  Woo-Young PARK

IPC分类号： H01L21/02 ,  H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

摘要翻译： 制造电容器的方法包括：在半导体衬底上形成第一硅层，其中所述第一硅层掺杂有掺杂剂; 在所述第一硅层上形成未掺杂的第二硅层; 通过蚀刻第二硅层和第一硅层形成开口; 在开口中形成存储节点; 以及去除所述第一硅层和所述第二硅层。

公开(公告)号：US20130069166A1

公开(公告)日：2013-03-21

申请号：US13337443

申请日：2011-12-27

申请人： Yun-Hyuck JI ,  Woo-Young PARK

发明人： Yun-Hyuck JI ,  Woo-Young PARK

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L27/0922 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode layer in the first region has a work function lower than a work function of a metal electrode formed from the metal electrode layer in the second region and a nitrogen concentration of the metal electrode of the first region is smaller than a nitrogen concentration of the metal electrode of the second region.