-
公开(公告)号：US12125950B2
公开(公告)日：2024-10-22
申请号：US18426288
申请日：2024-01-29
发明人： Yongjin Wang , Shuyu Ni , Jialei Yuan
CPC分类号： H01L33/502 , H01L33/0093 , H01L33/06 , H01L33/32 , H01L33/62
摘要： A method for manufacturing a vertical blue light emitting diode (LED) includes: bonding a growth substrate to a conductive substrate; peeling off the growth substrate; etching the nitride epitaxial layer to remove the buffer layer and the undoped GaN layer and to thin the N-type GaN layer, such that a thickness of a residual nitride epitaxial layer is less than a wavelength of blue light; and forming an N-type electrode on a surface of a residual N-type GaN layer.
-
公开(公告)号：US10514500B2
公开(公告)日：2019-12-24
申请号：US15984679
申请日：2018-05-21
发明人： Yongjin Wang , Guixia Zhu , Dan Bai , Jialei Yuan , Yin Xu
IPC分类号： G02B6/26 , G02B6/12 , G02B6/10 , G02B6/42 , G02B6/122 , H01L27/15 , H01L33/06 , H01L33/12 , H01L33/30 , H01L33/40
摘要： An integrated device and a fabrication method thereof are provided. In the device, by using various anisotropic silicon etching techniques, the silicon substrate layer and the expitaxial buffer layer under the device structure are removed, an ultra-thin device monolithically integrated with a suspended LED, an optical waveguide and a photodetector is obtained by further using the nitride back thinning etching technique. In the device, the light source, the optical waveguide and the photodetector are integrated on the same chip. The light emitted by the LED is laterally coupled to the optical waveguide, transmitted over the optical waveguide, and detected by the photodetector at the other end of the optical waveguide, thereby achieving a planar photon monolithically integrated device which is applied in the fields of optical transmission and optical sensing.
-
公开(公告)号：US10386574B2
公开(公告)日：2019-08-20
申请号：US15973285
申请日：2018-05-07
发明人： Yongjin Wang , Guixia Zhu , Dan Bai , Jialei Yuan , Yin Xu , Hongbo Zhu
IPC分类号： G02B6/12 , G02B6/13 , G02B6/122 , G02B6/136 , G02B6/132 , G02F1/025 , H01L33/20 , H01L33/00 , H01L33/38
摘要： By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an epitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.
-
公开(公告)号：US12100787B2
公开(公告)日：2024-09-24
申请号：US17372316
申请日：2021-07-09
发明人： Yongjin Wang , Shuyu Ni , Jialei Yuan
CPC分类号： H01L33/502 , H01L33/0093 , H01L33/06 , H01L33/32 , H01L33/62
摘要： A vertical blue LED includes: a conductive substrate, the conductive substrate including a first surface and a second surface opposite to the first surface a nitride epitaxial layer; a metal reflective layer, positioned on the first surface; a nitride epitaxial layer, positioned on a surface of the metal reflective layer and including a P-type GaN layer, a quantum well layer, a preparation layer, and an N-type GaN layer that are sequentially stacked along a direction perpendicular to the conductive substrate, wherein a thickness of the nitride epitaxial layer is less than a wavelength of blue light; an N-type electrode, positioned on a surface of the N-type GaN layer; and a P-type electrode, positioned on the second surface.
-
-
-
搜索结果
4 条记录 (耗时 0.014 秒)
