公开(公告)号：US20190186043A1

公开(公告)日：2019-06-20

申请号：US15913980

申请日：2018-03-07

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  TSAO-CHUN PENG ,  CHENG-JUNG KO ,  BANG-YING YU ,  CHIH-WEI KUO ,  YING-CONG ZHAO

IPC: C30B29/36 ,  C30B29/40 ,  H01L21/324

CPC classification number: C30B29/36 ,  C30B29/403 ,  H01L21/324

Abstract: A device for measuring distribution of thermal field in a crucible comprises a crucible comprising an upper lid, a body, a growth chamber and a material source zone; a thermally insulating material disposed outside the crucible; a movable heating component for heating the crucible; a plurality of thermocouples enclosed by insulating, high temperature resistant material and disposed in the crucible after being inserted into a plurality of holes on the upper lid to measure distribution of thermal field in the crucible. The thermocouples enclosed by insulating, high temperature resistant material are effective in measuring and adjusting temperature distribution in the crucible to achieve optimal temperature distribution for crystal growth in the crucible.

公开(公告)号：US20180179065A1

公开(公告)日：2018-06-28

申请号：US15434088

申请日：2017-02-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  CHENG-JUNG KO ,  BANG-YING YU ,  TSAO-CHUN PENG

IPC: C01B32/21

CPC classification number: C01B32/21 ,  C01B32/205

Abstract: A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate;(B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.

公开(公告)号：US20160168750A1

公开(公告)日：2016-06-16

申请号：US14565456

申请日：2014-12-10

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  TSAO-CHUN PENG ,  BANG-YING YU ,  HSUEH-I CHEN ,  JUN-BIN HUANG

IPC: C30B23/06 ,  C30B25/10 ,  C30B25/16 ,  C23C14/00 ,  C23C16/32 ,  C23C16/01 ,  C23C14/06 ,  C01B31/36 ,  C30B29/36

CPC classification number: C30B23/066 ,  C01B32/956 ,  C23C14/0005 ,  C23C14/0635 ,  C23C14/228 ,  C23C14/5853 ,  C30B29/36

Abstract: A method of producing a high-purity carbide mold includes the steps of (A) providing a template; (B) putting the template at a deposition region in a growth chamber; (C) putting a carbide raw material in the growth chamber; (D) providing a heating field; (E) introducing a gas; (F) depositing the carbide raw material; and (G) removing the template. The method is able to produce a mold from a high-purity carbide with a purity of 93% or above and therefore is effective in solving known problems with carbide molds, that is, low hardness and low purity.

Abstract translation: 制造高纯度碳化物模具的方法包括以下步骤：（A）提供模板; （B）将模板放置在生长室中的沉积区域; （C）将碳化物原料放入生长室内; （D）提供加热场; （E）引入气体; （F）沉积碳化物原料; 和（G）删除模板。 该方法能够从纯度为93％以上的高纯度碳化物制造模具，因此有效地解决了碳化物模具的已知问题，即低硬度和低纯度。