公开(公告)号：US11417491B2

公开(公告)日：2022-08-16

申请号：US16767689

申请日：2018-11-09

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jie Tang ,  Jinshi Yuan ,  Luchang Qin

IPC: H01J9/02 ,  H01J1/304 ,  C01B32/914 ,  B82Y30/00 ,  B82Y40/00

Abstract: The purpose of the present invention is to provide an emitter that is made of hafnium carbide (HfC) and that releases electrons in a stable and highly efficient manner, a method for manufacturing the emitter, and an electron gun and electronic device in which the emitter is used. In this nanowire equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} faces surrounding the (200) face.

公开(公告)号：US20180019091A1

公开(公告)日：2018-01-18

申请号：US15548623

申请日：2016-02-26

Applicant: National Institute for Materials Science

Inventor： Jie Tang ,  Jinshi Yuan ,  Han Zhang ,  Luchang Qin

IPC: H01J29/48 ,  H01J9/02

CPC classification number: H01J29/48 ,  H01J9/02 ,  H01J29/481 ,  H01J37/073 ,  H01J37/3178 ,  H01J2209/0223

Abstract: The emitter of the present invention includes a nanowire. The nanowire is formed from a hafnium carbide (HfC) single crystal, and at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO2). In the emitter, the thickness of the hafnium oxide may be 1 nm to 20 nm.

公开(公告)号：US10026585B2

公开(公告)日：2018-07-17

申请号：US15548623

申请日：2016-02-29

Applicant: National Institute for Materials Science

Inventor： Jie Tang ,  Jinshi Yuan ,  Han Zhang ,  Luchang Qin

IPC: H01J9/02 ,  H01J29/48

CPC classification number: H01J29/48 ,  H01J9/02 ,  H01J29/481 ,  H01J37/073 ,  H01J37/3178 ,  H01J2209/0223

Abstract: The emitter of the present invention includes a nanowire. The nanowire is formed from a hafnium carbide (HfC) single crystal, and at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO2). In the emitter, the thickness of the hafnium oxide may be 1 nm to 20 nm.

公开(公告)号：US08952605B2

公开(公告)日：2015-02-10

申请号：US14370082

申请日：2013-06-26

Applicant: National Institute for Materials Science

Inventor： Han Zhang ,  Jie Tang ,  Luchang Qin ,  Jinshi Yuan ,  Norio Shinya ,  Yasushi Yamauchi

IPC: H01J29/46 ,  H01J1/304 ,  H01J37/073 ,  H01J37/285

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/285 ,  H01J2201/30411 ,  H01J2201/30492 ,  H01J2237/06341

Abstract: A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Abstract translation: 具有尖端形成的金属端接（100）面的LaB6等金属六硼化物纳米线具有较小的功函数，并能从（100）面发射非常窄的电子束。 在这样的发射器中，污染发生在非常短的时间段内，当在低温下使用时，输出电流大大降低。 本发明的冷场发射器通过将尖端的金属端接（100）面低温暴露于氢的稳定化处理来克服这个问题，并能够在延长的时间段内稳定地工作。

公开(公告)号：US20150002009A1

公开(公告)日：2015-01-01

申请号：US14370082

申请日：2013-06-26

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Han Zhang ,  Jie Tang ,  Luchang Qin ,  Jinshi Yuan ,  Norio Shinyq ,  Yasushi Yamauchi

IPC: H01J1/304 ,  H01J37/285 ,  H01J37/073

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/285 ,  H01J2201/30411 ,  H01J2201/30492 ,  H01J2237/06341

Abstract: A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Abstract translation: 具有尖端形成的金属端接（100）面的LaB6等金属六硼化物纳米线具有较小的功函数，并能从（100）面发射非常窄的电子束。 在这样的发射器中，污染发生在非常短的时间段内，当在低温下使用时，输出电流大大降低。 本发明的冷场发射器通过将尖端的金属端接（100）面低温暴露于氢的稳定化处理来克服这个问题，并能够在延长的时间段内稳定地工作。