公开(公告)号：US20160314825A1

公开(公告)日：2016-10-27

申请号：US15134514

申请日：2016-04-21

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  SAMSUNG ELECTRONICS COMPANY LIMITED

发明人： Hiroaki SUKEGAWA ,  Hwachol LEE ,  Kazuhiro HONO ,  Seiji MITANI ,  Tadakatsu OHKUBO ,  Jun LIU ,  Shinya KASAI ,  Kwangseok KIM

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC分类号： G11C11/161 ,  H01F10/1933 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Provided is a structure having a perpendicular magnetization film which is an (Mn1-x,Gax)4N1-y (0

摘要翻译： 本发明提供一种具有垂直磁化膜的结构，其是具有通过控制和引入形成的缺氮组合物的（Mn1-x，Gax）4N1-y（0

公开(公告)号：US20180226573A1

公开(公告)日：2018-08-09

申请号：US15939903

申请日：2018-03-29

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Jiamin CHEN ,  Yuya SAKURABA ,  Jun LIU ,  Hiroaki SUKEGAWA ,  Kazuhiro HONO

IPC分类号： H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30

摘要： To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US20170229643A1

公开(公告)日：2017-08-10

申请号：US15424515

申请日：2017-02-03

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Jiamin CHEN ,  Yuya SAKURABA ,  Jun LIU ,  Hiroaki SUKEGAWA ,  Kazuhiro HONO

IPC分类号： H01L43/10 ,  H01L43/12 ,  H01F10/30 ,  H01L43/08 ,  H01F10/16 ,  H01F10/28

CPC分类号： H01L43/10 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/28 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/12

摘要： To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.