公开(公告)号：US20240276626A1

公开(公告)日：2024-08-15

申请号：US18568770

申请日：2022-03-24

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yuuichi KURASHIMA ,  Taisei MOTOMURA ,  Shinya YANAGIMACHI ,  Hideki TAKAGI ,  Eiji HIGURASHI ,  Takashi MATSUMAE

IPC: H05H1/10 ,  G04F5/14 ,  H03L7/26

CPC classification number: H05H1/10 ,  G04F5/14 ,  H03L7/26

Abstract: A small plasma source that enables highly efficient discharge in an ultra-high vacuum state includes a first magnet, a second magnet arranged so that a second magnetic pole faces the first magnetic pole of the first magnet, a third magnet having the second magnetic pole directed in the same direction as the first magnetic pole of the first magnet and arranged to surround the first magnet, a fourth magnet having the first magnetic pole different from the second magnetic pole facing the second magnetic pole of the third magnet and arranged to surround the second magnet, a first electrode provided on sides of the first magnetic pole of the first magnet and the second magnetic pole of the third magnet, a second electrode facing the first electrode and provided on sides of the second magnetic pole of the second magnet and the first magnetic pole of the fourth magnet, and a third electrode arranged between the first electrode and the second electrode. A value obtained by dividing a shorter distance between a distance between the first magnet and the second magnet and a distance between the third magnet and the fourth magnet by an average value of thicknesses of the first to fourth magnets is 1 or more and 10 or less.

公开(公告)号：US20240258195A1

公开(公告)日：2024-08-01

申请号：US18565295

申请日：2022-05-31

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  MITSUBISHI ELECTRIC CORPORATION

Inventor： Hideaki YAMADA ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO ,  Takashi MATSUMAE ,  Yuuichi KURASHIMA ,  Eiji HIGURASHI ,  Hideki TAKAGI ,  Shuichi HIZA ,  Ken IMAMURA ,  Yusuke SHIRAYANAGI ,  Koji YOSHITSUGU ,  Kunihiko NISHIMURA

IPC: H01L23/373 ,  B32B9/00 ,  B32B9/04 ,  B32B37/18 ,  B32B38/00 ,  C30B29/04 ,  C30B29/40 ,  C30B33/00 ,  H01L23/00

CPC classification number: H01L23/3732 ,  B32B9/007 ,  B32B9/04 ,  B32B37/18 ,  C30B29/04 ,  C30B29/406 ,  C30B33/00 ,  H01L24/32 ,  H01L24/83 ,  B32B2038/0064 ,  B32B2457/14 ,  H01L2224/32225 ,  H01L2224/83005

Abstract: This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.

公开(公告)号：US20240149565A1

公开(公告)日：2024-05-09

申请号：US18550096

申请日：2022-02-18

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi MATSUMAE ,  Hideki TAKAGI ,  Hitoshi UMEZAWA ,  Yuuichi KURASHIMA ,  Eiji HIGURASHI

IPC: B32B18/00 ,  H01L23/373

CPC classification number: B32B18/00 ,  H01L23/3738

Abstract: There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiOx formed on the surface and a second base material which has an oxide layer MOy with an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MOy side faces the SiOx side, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O−M bonds, the second base material is bonded to the first base material.