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    Wet processing apparatus
    1.
    发明授权
    Wet processing apparatus 有权

    公开(公告)号：US10431446B2

    公开(公告)日：2019-10-01

    申请号：US15037886

    申请日：2014-12-01

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Shiro Hara ,  Sommawan Khumpuang ,  Shinichi Ikeda ,  Akihiro Goto ,  Hiroshi Amano

    IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12

    Abstract: A wafer cleaner and a method therefor that efficiently cleans a wafer with a little amount of a cleaning liquid and efficiently performs a heating wet cleaning processing. The present invention includes a stage where a wafer is placed, a rotary driving unit that rotates the stage in a circumferential direction, a liquid discharge nozzle disposed facing the wafer placed on the stage and supplies a cleaning liquid on the wafer placed on the stage, and a control unit that causes the liquid discharge nozzle to supply a space between the wafer placed on the stage and the liquid discharge nozzle with a predetermined amount of the cleaning liquid to fill the space. The present invention also includes a lamp disposed on a position facing the wafer placed on the stage to heat at least an interface portion of the wafer and a cleaning liquid.

    CONVERGING MIRROR FURNACE
    3.
    发明申请
    CONVERGING MIRROR FURNACE 有权

    公开(公告)号：US20140338591A1

    公开(公告)日：2014-11-20

    申请号：US14362348

    申请日：2012-11-30

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Shinichi Ikeda ,  Shiro Hara ,  Takanori Mikahara ,  Hitoshi Habuka ,  Sommawan Khumpuang

    IPC: C23C16/48 ,  C30B13/24

    CPC classification number: C23C16/482 ,  C30B13/24 ,  F27B17/0025 ,  F27D2099/0026 ,  H01L21/67115 ,  Y10T117/108

    Abstract: Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.

    Abstract translation: 提供一种会聚反射镜式炉，用于通过从反射镜单元反射从光源发射的光然后用反射光照射目标来加热目标，其中所述目标加热会聚光炉使得： 反射镜单元包括主反射镜和次反射镜; 从光源发射的光被主反射镜和次反射镜依次反射，然后照射到目标上; 并且由二次反射镜反射并被照射到目标表面上的光不与目标表面垂直。 基于上述，即使系统使用旋转椭圆体，也可以使使用会聚红外线来提供加热的系统更小，同时保持其加热性能不变。

    Method of manufacturing semiconductor wafers
    4.
    发明授权
    Method of manufacturing semiconductor wafers 有权
    制造半导体晶圆的方法

    公开(公告)号：US09123795B2

    公开(公告)日：2015-09-01

    申请号：US14087883

    申请日：2013-11-22

    Applicant: Fujikoshi Machinery Corp. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Yoshio Nakamura ,  Daizo Ichikawa ,  Haruo Sumizawa ,  Shiro Hara ,  Sommawan Khumpuang ,  Shinichi Ikeda

    IPC: H01L21/00 ,  H01L21/78

    CPC classification number: H01L21/78 ,  H01L21/02005 ,  H01L21/02008

    Abstract: A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.

    Abstract translation: 一种制造半导体晶片的方法，其有利于形成取向扁平线，并且可以毫无问题地进行斜切加工。 制造半导体晶片的方法包括从大直径半导体晶片切出多个小直径晶片的步骤，该方法包括：标记步骤，通过激光束形成直槽状定向扁平线，以便 跨越大直径半导体晶片中的每行中的各个小直径晶片，其中小直径晶片的切割位置对于每个行共同沿特定方向排成一行; 以及切割步骤，在所述标记步骤之后，通过激光束与所述大直径半导体晶片分开地切割所述小直径晶片，使得所述取向扁平线位于所述小直径的所需位置 要获得的晶圆。

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