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    SWITCHING ELEMENT, AND METHOD FOR PRODUCING SWITCHING ELEMENT
    2.
    发明申请
    SWITCHING ELEMENT, AND METHOD FOR PRODUCING SWITCHING ELEMENT 审中-公开
    开关元件和开关元件的制造方法

    公开(公告)号：US20160359110A1

    公开(公告)日：2016-12-08

    申请号：US15120993

    申请日：2015-02-18

    Applicant: NEC CORPORATION

    Inventor： Naoki BANNO ,  Munehiro TADA ,  Koichiro OKAMOTO

    IPC: H01L45/00 ,  H01L23/522 ,  H01L23/532

    CPC classification number: H01L45/1266 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/15 ,  G11C2213/52 ,  H01L23/5226 ,  H01L23/53228 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1675

    Abstract: Provided is a nonvolatile switching element which has high retention ability even if programmed at a low current, while being suppressed in dielectric breakdown of a variable resistance layer during a reset operation. This switching element is provided with: a first electrode; a second electrode; and a variable resistance layer that is arranged between the first electrode and the second electrode and has ion conductivity. The first electrode contains a metal which generates metal ions that can be conducted in the variable resistance layer. The second electrode is provided with: a first electrode layer that is formed in contact with the variable resistance layer; and a second electrode layer that is formed in contact with the first electrode layer. The first electrode layer is formed of a ruthenium alloy that contains ruthenium and a first metal having a larger standard Gibbs energy of formation of oxide than ruthenium in the negative direction. The second electrode layer is formed of a nitride that contains the first metal. The content of the first metal in the first electrode layer is lower than the content of the first metal in the second electrode layer.

    Abstract translation: 提供了即使在低电流下编程也具有高保持能力的非易失性开关元件，同时在复位操作期间抑制可变电阻层的电介质击穿。 该开关元件设置有：第一电极; 第二电极; 以及布置在第一电极和第二电极之间并具有离子传导性的可变电阻层。 第一电极含有产生可在可变电阻层中传导的金属离子的金属。 第二电极设置有：与可变电阻层接触形成的第一电极层; 以及形成为与第一电极层接触的第二电极层。 第一电极层由含有钌的钌合金和在负方向上具有比钌形成氧化物更大的标准吉布斯能量的第一金属形成。 第二电极层由含有第一金属的氮化物形成。 第一电极层中的第一金属的含量低于第二电极层中的第一金属的含量。

    SWITCHING ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR SWITCHING DEVICE
    3.
    发明申请
    SWITCHING ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR SWITCHING DEVICE 审中-公开
    用于制造半导体开关器件的开关元件和方法

    公开(公告)号：US20150340606A1

    公开(公告)日：2015-11-26

    申请号：US14655920

    申请日：2014-01-15

    Applicant: NEC CORPORATION

    Inventor： Munehiro TADA ,  Toshitsugu SAKAMOTO ,  Naoki BANNO ,  Koichiro OKAMOTO

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/126 ,  G11C13/0002 ,  G11C2213/15 ,  G11C2213/78 ,  H01L27/2418 ,  H01L27/2427 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1675 ,  H01L45/1683

    Abstract: In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another.

    Abstract translation: 在使用两端型可变电阻元件的开关元件中，经常引起不正确的写入或不正确的操作，并且不容易改善开关元件的可靠性。 根据本发明的开关元件配备有配备有第一输入/输出端子和第一连接端子的第一可变电阻元件，配备有第二输入/输出端子和第二连接端子的第二可变电阻元件，以及 配备有控制端子和第三连接端子的整流元件，其中第一连接端子，第二连接端子和第三连接端子彼此连接。

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