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1.发明申请公开(公告)号：US20200318255A1
公开(公告)日：2020-10-08
申请号：US16753533
申请日：2018-10-04
Applicant: NEXDOT
Inventor： Emmanuel LHUILLIER , Nicolas GOUBET , Amardeep JAGTAP , Clément LIVACHE , Yu-Pu LIN
IPC: C30B29/48 , C30B7/14 , H01L31/0352 , H01L31/101 , H01L31/032
Abstract: A plurality of metal chalcogenide nanocrystals AnXm having an optical absorption feature above 12 μm and having a size superior to 20 nm. The metal A is selected from Hg, Pb, Ag, Bi, Cd, Sn, Sb or a mixture thereof. The chalcogen X is selected from S, Se, Te or a mixture thereof. The subscripts n and m are independently a decimal number from 0 to 5 and are not simultaneously equal to 0. Also, a method for manufacturing the plurality of metal chalcogenide nanocrystals AnXm, a material, a photoabsorptive film, a photoconductor, photodetector, photodiode or phototransistor, a device, the use of the plurality of metal chalcogenide nanocrystals, and a reflective or transmission filter.
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Patent Agency Ranking
公开(公告)号：US20180107065A1
公开(公告)日：2018-04-19
申请号：US15561717
申请日：2016-03-25
Applicant: NEXDOT
Inventor： Hadrien HEUCLIN , Brice NADAL , Chloe GRAZON , Benoit MAHLER , Emmanuel LHUILLIER
IPC: G02F1/1335 , H01L21/02 , C09K11/88 , C09K11/02
CPC classification number: G02F1/133603 , C09K11/02 , C09K11/565 , C09K11/883 , G02F1/133606 , G02F2001/133614 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02565 , H01L21/02601 , H01L21/02628
Abstract: Disclosed is a population of semiconductor nanoplatelets, each member of the population including a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100° C. or above that is at least 80% of the fluorescence quantum efficiency of the population at 20° C. Also disclosed is a nanoplatelets film including the population of nanoplatelets, a backlight unit including the nanoplatelets film and a liquid crystal display including the backlight unit.
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公开(公告)号：US20170040120A1
公开(公告)日：2017-02-09
申请号：US15305154
申请日：2015-04-22
Applicant: NEXDOT , FONDS DE L'ESPCI - GEORGES CHARPAK
Inventor： Emmanuel LHUILLIER , Benoit DUBERTRET
CPC classification number: H01G9/205 , B82Y10/00 , H01G9/2054 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L21/28 , H01L29/0665 , H01L29/0673 , H01L29/22 , H01L29/413 , H01L31/022408 , H01L31/112 , H01L33/06 , H01L51/5206 , H01L51/5221 , H01L51/56 , H01S5/1067
Abstract: An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.
Abstract translation: 一种电子器件包括衬底和至少两个由纳米隙间隔的电极，其中所述至少两个电极由至少一个纳米颗粒桥接，并且其中所述至少一个纳米颗粒具有与所述至少两个电极重叠的重叠面积高于2％ 的至少一种纳米颗粒的面积。 还描述了制造电子装置的方法以及在光电检测器，晶体管，光电晶体管，光调制器，电二极管，光伏电池或电致发光部件中使用电子器件。
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公开(公告)号：US20150303256A1
公开(公告)日：2015-10-22
申请号：US14258245
申请日：2014-04-22
Applicant: NEXDOT , FONDS DE L'ESPCI - GEORGES CHARPAK
Inventor： Benoit DUBERTRET , Emmanuel LHUILLIER
IPC: H01L29/06 , H01L29/861 , H01L21/02
CPC classification number: H01G9/205 , B82Y10/00 , H01G9/2054 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L21/28 , H01L29/0665 , H01L29/0673 , H01L29/22 , H01L29/413 , H01L31/022408 , H01L31/112 , H01L33/06 , H01L51/5206 , H01L51/5221 , H01L51/56 , H01S5/1067
Abstract: An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing of the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.
Abstract translation: 一种电子器件包括衬底和至少两个由纳米隙间隔的电极，其中所述至少两个电极由至少一个纳米颗粒桥接，并且其中所述至少一个纳米颗粒具有与所述至少两个电极重叠的重叠面积高于2％ 的至少一种纳米颗粒的面积。 还描述了电子器件的制造方法以及电子器件在光电检测器，晶体管，光电晶体管，光调制器，电二极管，光伏电池或电致发光部件中的使用。
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公开(公告)号：US20210087462A1
公开(公告)日：2021-03-25
申请号：US17024878
申请日：2020-09-18
Inventor： Emmanuel LHUILLIER , Nicolas GOUBET
IPC: C09K11/02 , H01L31/0296 , C01B19/00 , C01G13/00 , C09K11/89
Abstract: A method of preparation of mercury chalcogenide nanoparticles that includes the steps of providing a precursor of mercury and mixing the precursor of mercury with a precursor of chalcogenide, wherein the precursor of mercury is a mercury thiolate. Also, mercury telluride nanoparticles and their use in an IR photodetector, an IR photoconversion device, an IR filter or an IR photodiode.
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公开(公告)号：US20200083469A1
公开(公告)日：2020-03-12
申请号：US15746860
申请日：2016-07-28
Applicant: NEXDOT
Inventor： Emmanuel LHUILLIER
IPC: H01L51/42 , C01B19/00 , C01G13/00 , C01G28/00 , C01G30/00 , C01G11/02 , H01L37/02 , H01L27/30 , H01L51/00 , H01L51/44 , G01J5/08 , G01J5/20
Abstract: Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S2−, HS−, Se2−, Te2−, OH−, BF4−, PF6−, Cl−, Br−, I−, As2Se3, Sb2S3, Sb2Te3, Sb2Se3, As2S3 or a mixture thereof; and wherein the absorption of the C—H bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.
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