公开(公告)号：US20170063032A1

公开(公告)日：2017-03-02

申请号：US15248318

申请日：2016-08-26

Applicant: NICHIA CORPORATION

Inventor： Naoto MORIZUMI ,  Takashi NAMIE ,  Takashi NAKAGAWA ,  Daisuke KOMODA ,  Hiroaki SHOZUI

IPC: H01S5/022 ,  H01S5/30

CPC classification number: H01S5/02208 ,  F21S41/14 ,  F21S41/16 ,  F21S41/192 ,  F21S43/13 ,  F21S43/195 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02288 ,  H01S5/02296 ,  H01S5/02469 ,  H01S5/3013

Abstract: A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the support member is smaller than that of the through-hole of the lid. A coefficient of thermal expansion of the support member is different from that of the lid. The wavelength converting member is supported in the through-hole of the support member. The holding member is fixed to the lid and holds the support member. The buffer material is disposed in at least a part of a space to between the lateral surfaces of the recess and the support member.

Abstract translation: 半导体激光装置包括基底，半导体激光元件，盖，支撑构件，波长转换构件，保持构件和缓冲材料。 盖具有形成在盖的上部中的凹部和形成在凹部的底部中的通孔。 支撑构件设置在凹部中并具有通孔。 支撑构件的通孔的直径小于盖的通孔的直径。 支撑构件的热膨胀系数与盖的热膨胀系数不同。 波长转换部件被支撑在支撑部件的通孔中。 保持构件固定在盖上并保持支撑构件。 缓冲材料设置在空间的至少一部分到凹部的侧表面和支撑构件之间。