公开(公告)号：US09318871B2

公开(公告)日：2016-04-19

申请号：US14261520

申请日：2014-04-25

Applicant: NICHIA CORPORATION

Inventor： Hiroki Sakata ,  Hiroaki Yuto ,  Eiichiro Okahisa ,  Kazuma Kozuru

IPC: H01S3/04 ,  H01S5/024 ,  H01S5/022 ,  H01S5/323

CPC classification number: H01S5/02469 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02256 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

公开(公告)号：US11939667B2

公开(公告)日：2024-03-26

申请号：US17230763

申请日：2021-04-14

Applicant: NICHIA CORPORATION

Inventor： Naoki Eboshi ,  Hiroaki Yuto ,  Hiroki Sakata ,  Toshiaki Yamashita ,  Akinori Hara

IPC: C23C14/14 ,  C23C14/58 ,  C23C16/01 ,  F21V7/26 ,  F21V9/32 ,  H01S5/0225 ,  F21Y115/10 ,  F21Y115/30

CPC classification number: C23C14/5873 ,  C23C14/14 ,  C23C14/588 ,  C23C16/01 ,  F21V7/26 ,  F21V9/32 ,  H01S5/0225 ,  F21Y2115/10 ,  F21Y2115/30

Abstract: A method for manufacturing a wavelength conversion member, includes: providing a wavelength conversion layer having a phosphor-containing portion and a light reflecting portion surrounding the phosphor-containing portion, and the wavelength conversion layer having an upper surface, a bottom surface and at least one side surface; forming a light-blocking film on the upper surface of the wavelength conversion layer; and removing a part of the light-blocking film by laser processing to expose at least a part of the phosphor-containing portion from the light-blocking film.

公开(公告)号：US09991671B2

公开(公告)日：2018-06-05

申请号：US15258868

申请日：2016-09-07

Applicant: NICHIA CORPORATION

Inventor： Hiroki Sakata ,  Hiroki Koizumi

IPC: H01L21/00 ,  H01L21/33 ,  H01L21/82 ,  H01S5/02 ,  H01S5/042 ,  H01S5/30

CPC classification number: H01S5/0202 ,  H01S5/0206 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/34333

Abstract: A method for producing a semiconductor laser element includes providing a semiconductor wafer comprising: a nitride semiconductor substrate, and a semiconductor stack located on the substrate, the semiconductor stack including a plurality of nitride semiconductor layers; forming in the substrate a fissure starting point and a fissure extending from the fissure starting point; forming a cleavage reference portion extending parallel to a cleavage plane of the semiconductor wafer as estimated from a plan view shape of the fissure; and cleaving the semiconductor wafer parallel to the cleavage reference portion to thereby obtain resonator end faces.

公开(公告)号：US09496680B2

公开(公告)日：2016-11-15

申请号：US15057770

申请日：2016-03-01

Applicant: NICHIA CORPORATION

Inventor： Hiroki Sakata ,  Hiroaki Yuto ,  Eiichiro Okahisa ,  Kazuma Kozuru

IPC: H01L21/00 ,  H01S5/024 ,  H01S5/022 ,  H01S5/323

CPC classification number: H01S5/02469 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02256 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract translation: 半导体激光器件可以包括具有第一表面，第二表面和在第一表面和第二表面中具有开口的微管的绝缘单晶SiC。 可以在单晶SiC的第一表面的一侧设置导电性基材，并且可以在单晶SiC的第二面的一侧设置半导体激光元件。 可以在微管中形成绝缘构件。