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公开(公告)号:US20240250497A1
公开(公告)日:2024-07-25
申请号:US18417032
申请日:2024-01-19
申请人: NICHIA CORPORATION
发明人: Tadayuki KITAJIMA
IPC分类号: H01S5/0225 , H01S5/0232 , H01S5/40
CPC分类号: H01S5/0225 , H01S5/40 , H01S5/0232
摘要: A light emitting device includes: a base having a recess and a flat upper surface; a light emitting element disposed on the upper surface of the base and configured to emit light laterally from an emission end surface; and a reflective member disposed on the upper surface of the base to face the light emitting element with the recess located between part of the reflective member and the light emitting element in a top view, the reflective member having a reflective surface configured to reflect the light upward. At least a portion of the reflective surface overlaps with the recess in the top view. A lower end of the reflective surface is located lower than the upper surface of the base and higher than a bottom surface of the recess in a direction normal to the upper surface of the base.
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公开(公告)号:US20240195143A1
公开(公告)日:2024-06-13
申请号:US18552291
申请日:2022-03-31
发明人: Norwin von Malm
IPC分类号: H01S5/0225 , G01S7/481 , H01S5/042
CPC分类号: H01S5/0225 , G01S7/4814 , H01S5/04254
摘要: In an embodiment a light-emitting device includes a housing body, a light-emitting semiconductor component in the housing body, the light-emitting component configured to emit light and an adaptive optical element in and/or on the housing body arranged downstream of the light-emitting semiconductor component in an optical path of the light, wherein the light-emitting device is a semiconductor package.
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公开(公告)号:US20230387654A1
公开(公告)日:2023-11-30
申请号:US18361421
申请日:2023-07-28
IPC分类号: H01S5/024 , H01S5/0225 , H01S5/40 , H01S5/06 , H01S5/068
CPC分类号: H01S5/024 , H01S5/0225 , H01S5/40 , H01S5/0612 , H01S5/068
摘要: An optical apparatus comprising at least two optoelectronic devices fabricated on the same substrate and in thermal communication with each other. A first optoelectronic device is configured to generate optical signals and provide them to an optical system via an optical output port. A second optoelectronic device is configured to provide heat compensation for the first optoelectronic device. An electrical circuitry provides first electrical signals to the first optoelectronic device and second electrical signals to the second optoelectronic device. The electrical circuitry is configured to adjust at least the second electrical signals to controllably adjust a temperature of the first optoelectronic device.
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公开(公告)号:US11932791B2
公开(公告)日:2024-03-19
申请号:US17431438
申请日:2020-02-14
发明人: Simon Peschke , Stefan Lange
IPC分类号: C09K11/77 , C01B21/082 , H01L33/50 , H01S5/0225
CPC分类号: C09K11/77347 , C01B21/0823 , C09K11/77348 , H01L33/502 , H01S5/0225 , C01P2002/54 , C01P2002/76 , C01P2002/77
摘要: A phosphor having the general formula EA7A2T1t1T2t2 T3t3NnOo:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3−3n−2 o=0. t1+t2+t3=5; n+o=16; 0≤t1≤4; 0≤t2≤5; 0≤t3≤5; 0≤n≤9; 7≤o≤16.
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公开(公告)号:US11824325B2
公开(公告)日:2023-11-21
申请号:US17463714
申请日:2021-09-01
发明人: Shingo Totani
IPC分类号: H01S5/06 , H01S5/0225 , H01S5/00
CPC分类号: H01S5/0611 , H01S5/0087 , H01S5/0225
摘要: A multilayer wiring substrate includes a first wiring substrate including a plurality of stacked layers made of a thermo setting resin and having a wiring layer formed between each adjacent layer of the layers in a state in contact with the adjacent layers, a second wiring substrate made of a ceramic, and a joining layer disposed between a back surface of the first wiring substrate and a front surface of the second wiring substrate and configured to join the first wiring substrate and the second wiring substrate to each other, wherein at least a surface of the joining layer adjacent to the second wiring substrate is made of a thermo plastic resin.
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6.
公开(公告)号:US20230198231A1
公开(公告)日:2023-06-22
申请号:US17998635
申请日:2021-05-05
CPC分类号: H01S5/4012 , H01S5/026 , H01S5/0607 , H01S5/4087 , H01S5/0225 , H01S5/1039 , H01S5/0622 , H01S5/06216 , H01S5/305
摘要: In an embodiment a semiconductor laser component includes a plurality of semiconductor lasers, each of the semiconductor lasers configured to emit primary electromagnetic radiation of a primary spectral bandwidth in a visible wavelength range and a beam combiner configured to combine the primary electromagnetic radiations emitted from the semiconductor lasers, form secondary electromagnetic radiation from a superposition of the primary electromagnetic radiations of the semiconductor lasers and couple the secondary electromagnetic radiation out from the beam combiner, wherein the secondary electromagnetic radiation has a secondary spectral bandwidth that is at least twice as large as an average value of the primary spectral bandwidths.
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公开(公告)号:US12132297B2
公开(公告)日:2024-10-29
申请号:US17294446
申请日:2018-09-25
发明人: Yang Wang , Yongxiang He
IPC分类号: H01S5/00 , H01S5/0225 , H01S5/0234 , H01S5/042 , H01S5/183 , H01S5/42 , H01S5/02345
CPC分类号: H01S5/423 , H01S5/0225 , H01S5/0234 , H01S5/04256 , H01S5/18361 , H01S5/02345 , H01S5/42
摘要: The present invention discloses a VCSEL array that can function in at least two different operational modes. In one operational mode, the VCSEL array functions as a regular-patterned array; and in the other operational mode, the VCSEL array functions as an irregular-patterned array. Thus, the same VCSEL chip may be used as an illumination light source or a structural light method light source for 3D sensing, depending on the selected operational mode.
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公开(公告)号:US12057675B1
公开(公告)日:2024-08-06
申请号:US18501534
申请日:2023-11-03
发明人: Chris Hessenius , Mahmoud Fallahi
IPC分类号: H01S5/00 , H01S5/0225 , H01S5/042 , H01S5/183 , H01S5/42
CPC分类号: H01S5/005 , H01S5/0225 , H01S5/0421 , H01S5/18361 , H01S5/423
摘要: An electrical pumping vertical external-cavity surface-emitting laser (EP-VECSEL) device. The device may comprise a bottom contact, a first distributed Bragg reflector (DBR) disposed on the bottom contact, and an active region comprising a plurality of emitters, disposed on the first DBR configured to accept an electrical current at multiple emitters on the active region such that the multiple emitters produce a plurality of lasers. The multiple emitters may be configured to form a desired Hermite Gaussian (HG) mode shape. The device may further comprise a second DBR disposed on the active region and a top contact disposed on the second DBR. The top contact may be shaped such that the plurality of lasers are directed through the top contact. The device may further comprise an array output coupler disposed optically in line with the top contact such that the plurality of lasers are directed into the array output coupler.
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9.
公开(公告)号:US11862927B2
公开(公告)日:2024-01-02
申请号:US16780138
申请日:2020-02-03
申请人: Nuburu, Inc.
发明人: Jean-Philippe Feve , Matthew Silva Sa , Monica Greenlief , Donald Millick , Denis Brisson , Nathaniel Dick , Mark S Zediker
IPC分类号: H01S5/00 , H01S3/02 , H01S5/02224 , H01S5/0225 , H01S5/40 , H01S3/23 , H01S3/00
CPC分类号: H01S5/0021 , H01S3/027 , H01S5/02224 , H01S5/4087 , H01S3/0071 , H01S3/2383 , H01S5/0225 , H01S5/4031
摘要: There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.
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公开(公告)号:US11749967B2
公开(公告)日:2023-09-05
申请号:US17645653
申请日:2021-12-22
申请人: OSRAM OLED GmbH
发明人: Frank Singer , Hubert Halbritter
IPC分类号: H01S5/00 , H01S5/183 , H01S5/42 , H01S5/0225
CPC分类号: H01S5/18386 , H01S5/0225 , H01S5/18388 , H01S5/18391 , H01S5/423 , H01S2301/176
摘要: In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.
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