LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE

    公开(公告)号:US20230090933A1

    公开(公告)日:2023-03-23

    申请号:US17947294

    申请日:2022-09-19

    Abstract: A light emitting device includes a semiconductor light emitting element and a package that seals the semiconductor light emitting element. The package includes a base having a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and a second upper surface region surrounding the first upper surface region in a plan view viewed in a direction normal to the first upper surface region. The package further includes a cover bonded to the base, an inner metal layer disposed on the second upper surface region of the base, an outer metal layer extending along the outer edge of the inner metal layer, and a slit part on the second upper surface region between the inner metal layer and the outer metal layer. In the plan view, the inner edge of the inner metal layer is positioned inward of the outer edge of the cover. In the plan view, at least a portion of the outer edge of the outer metal layer is positioned outward of the outer edge of the cover. The cover is bonded to the base via a bonding material disposed on the inner metal layer.

    LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE

    公开(公告)号:US20230352902A1

    公开(公告)日:2023-11-02

    申请号:US18308618

    申请日:2023-04-27

    CPC classification number: H01S5/023 H01S5/4025 H01S5/06825

    Abstract: A light-emitting device includes a submount, a semiconductor laser element, and a protective element. The submount includes a wiring pattern. The wiring pattern includes first and second regions connected at a first position. The semiconductor laser element is disposed on the first region. The protective element is disposed on the second region. The width of the first region is greater than a width of the semiconductor laser element in the first direction. The length of the first region in a second direction between the first position and a distal end of the first region is a second distance. A maximum width of the second region is greater than the width of the first region in the first direction at the first position. An interval in the second direction between the semiconductor laser element and the protective element is greater than 0 μm and less than 170 μm.

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