公开(公告)号：US20140027780A1

公开(公告)日：2014-01-30

申请号：US14044419

申请日：2013-10-02

Applicant: NICHIA CORPORATION

Inventor： Masafumi KURAMOTO ,  Tomohide MIKI ,  Tomoya TSUKIOKA ,  Tomohisa KISHIMOTO

IPC: H01L33/56 ,  H01L33/32

CPC classification number: H01L33/36 ,  C08G59/3245 ,  C08K3/013 ,  C08K5/005 ,  H01L33/32 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and a lateral surface; and a sealing member (50) containing an epoxy resin including a triazine derivative epoxy resin, or a silicon-containing resin. The molded body (40) is obtained by using a cured product of a thermosetting epoxy resin composition essentially containing an epoxy resin including a triazine derivative epoxy resin, and has a reflectance of not less than 70% at the wavelengths of not less than 430 nm.

公开(公告)号：US20140315338A1

公开(公告)日：2014-10-23

申请号：US14321672

申请日：2014-07-01

Applicant: NICHIA CORPORATION

Inventor： Masafumi KURAMOTO ,  Tomohide MIKI ,  Tomoya TSUKIOKA ,  Tomohisa KISHIMOTO

IPC: H01L33/56 ,  H01L33/36 ,  H01L33/60

CPC classification number: H01L33/36 ,  C08G59/3245 ,  C08K3/013 ,  C08K5/005 ,  H01L33/32 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and a lateral surface; and a sealing member (50) containing an epoxy resin including a triazine derivative epoxy resin, or a silicon-containing resin. The molded body (40) is obtained by using a cured product of a thermosetting epoxy resin composition essentially containing an epoxy resin including a triazine derivative epoxy resin, and has a reflectance of not less than 70% at the wavelengths of not less than 430 nm.

Abstract translation: 公开了一种发光装置，其包括由发光峰值波长不小于430nm的氮化镓系化合物半导体构成的发光元件（10） 设置有具有安装有发光元件（10）的底面的凹部和侧面的成型体（40） 以及含有包含三嗪衍生物环氧树脂的环氧树脂或含硅树脂的密封构件（50）。 成型体（40）通过使用基本上含有包含三嗪衍生物环氧树脂的环氧树脂的热固性环氧树脂组合物的固化物得到，并且在不小于430nm的波长下具有不小于70％的反射率 。