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公开(公告)号：US3651348A
公开(公告)日：1972-03-21
申请号：US3651348D
申请日：1969-10-03
Applicant: NIPPON ELECTRIC CO
Inventor： MATSUKURA YASUO , WADA TOSHIO , OHTA KUNIICHL
CPC classification number: H03K19/02
Abstract: A logic device comprises a Gunn effect element having a capacitive element connected across its electrodes. The Gunn effect element is normally biased below the threshold value, and an input pulse is applied to raise the internal field of the Gunn effect element above the threshold value. The resultant charging of the capacitive element causes the Gunn effect element to be maintained in a state of oscillation.
Abstract translation: 逻辑器件包括具有连接在其电极上的电容元件的Gunn效应元件。 Gunn效应元件通常偏置在阈值以下，并且施加输入脉冲以将Gunn效应元件的内部场提高到阈值以上。 电容元件的最终充电使得Gunn效应元件保持在振荡状态。
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公开(公告)号：US3599000A
公开(公告)日：1971-08-10
申请号：US3599000D
申请日：1969-03-13
Applicant: HITACHI LTD , NIPPON ELECTRIC CO
Inventor： YANAI HISAYOSHI , SUGETA TAKAYUKI , MIGITAKA MASATOSHI , NAKASHIMA HISAO , MATSUKURA YASUO , OHTA KUNIICHI
CPC classification number: G02F3/00 , H01L31/162
Abstract: A semiconductor device for use as a logic element wherein a Gunn effect element is placed in optical coupling relationship with a plurality of semiconductive light emissive elements on a common semiconductor substrate. The Gunn effect element exhibits a photoconduction effect when irradiated by the light from the light emissive elements to provide AND or OR logic function depending upon the intensity of the irradiating light.
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公开(公告)号：US3535601A
公开(公告)日：1970-10-20
申请号：US3535601D
申请日：1968-07-30
Applicant: NIPPON ELECTRIC CO
Inventor： MATSUKURA YASUO , OHTA KUNIICHI , WADA TOSHIO
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Patent Agency Ranking
公开(公告)号：US3555282A
公开(公告)日：1971-01-12
申请号：US3555282D
申请日：1968-07-30
Applicant: NIPPON ELECTRIC CO
Inventor： YANAI HISAYOSHI , IKOMA TOSHIAKI , SUGETA TAKAYUKI , MATSUKURA YASUO , OHTA KUNIICHI
IPC: H01L47/02
CPC classification number: H01L47/023
Abstract: A device is described for generating the beam effect in a semiconductor suitable therefor by applying a source of light at a portion of the semiconductor material to lower the resistance thereof and effectively raise the field intensity elsewhere in the semiconductor. The field intensity is produced by applying a voltage source across the semiconductor with a level selected to produce an electric field intensity in the material that is less than that necessary to produce Gunn oscillations but which is sufficiently high to permit the light source to trigger the semiconductor into high field domain Gunn oscillations.
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公开(公告)号：US3538400A
公开(公告)日：1970-11-03
申请号：US3538400D
申请日：1968-07-30
Applicant: NIPPON ELECTRIC CO
Inventor： YANAI HISAYOSHI , IKOMA TOSHIAKI , SUGETA TAKAYUKI , MATSUKURA YASUO , OHTA KUNIICHI
CPC classification number: H01L47/02
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公开(公告)号：US3602734A
公开(公告)日：1971-08-31
申请号：US3602734D
申请日：1968-10-29
Applicant: NIPPON ELECTRIC CO
Inventor： MATSUKURA YASUO , OHTA KUNIICHI , WADA TOSHIO
CPC classification number: H03K19/02
Abstract: A inhibited NOT circuit is described utilizing the Gunn effect. The NOT circuit is formed by connecting several semiconductor regions of the bulk negative resistance effect type in series relationship with interconnecting regions having sufficient conductivity to naturally suppress the formation of high field domains therein. The sizes and shapes of the semiconductor regions are so selected that in response to a bias voltage applied to electric field biasing electrodes one of the regions supports continuous high field domain oscillations unless inhibited by the formation of a high field domain in another semiconductor region. Several NOT logic devices are shown and described such as the NOR, the NAND and the R junction.
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公开(公告)号：US3597625A
公开(公告)日：1971-08-03
申请号：US3597625D
申请日：1968-10-29
Applicant: NIPPON ELECTRIC CO
Inventor： YANAI HISAYOSHI , IKOMA TOSHIAKI , SUGETA TAKAYUKI , MATSUKURA YASUO , OHTA KUNIICHI
CPC classification number: H01L47/02 , Y10T307/484
Abstract: A neuristor element is described which is formed of a pair of Gunn effect elements using bulk negative resistance effect materials capable of forming high electric field layers in the elements upon the application of electric field intensities of preselected values within the materials. The elements are so coupled to one another that the initiation of a high electric field layer in one of them acts to inhibit the formation of such layer in the other element by effectively lowering the electric field intensity in the other element well below the threshold level necessary to form such high electric field layers. Several embodiments are described with one using capacitive coupling and another resistive or direct coupling.
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8.发明授权High-speed logic device employing a gunn-effect element and a semiconductor laser element 失效采用激光效应元件和半导体激光元件的高速逻辑器件
公开(公告)号：US3577018A
公开(公告)日：1971-05-04
申请号：US3577018D
申请日：1969-03-13
Applicant: NIPPON ELECTRIC CO
Inventor： WADA TOSHIO , MATSUKURA YASUO , OHTA KUNIICHI
CPC classification number: G02F3/00 , H01S5/0261 , H01S5/06216 , H01S5/32 , H03K3/313
Abstract: A semiconductor device is described wherein a Gunn effect element is placed in series with the PN junction of a semiconductor laser. A bias potential is applied across the series connection to forwardly bias the PN junction and normally produce lasing action from the laser element. The bias potential is further selected so that current reductions produced by high electric field layers traveling within the Gunn element effectively suppress lasing actions. Several embodiments are shown.
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