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    Method of Forming Capacitors, and Methods of Utilizing Silicon Dioxide-Containing Masking Structures
    1.
    发明申请
    Method of Forming Capacitors, and Methods of Utilizing Silicon Dioxide-Containing Masking Structures 有权
    形成电容器的方法，以及使用含二氧化硅掩蔽结构的方法

    公开(公告)号：US20110143543A1

    公开(公告)日：2011-06-16

    申请号：US13032492

    申请日：2011-02-22

    申请人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    发明人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    IPC分类号： H01L21/306

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Methods of forming capacitors
    2.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US07892937B2

    公开(公告)日：2011-02-22

    申请号：US12252499

    申请日：2008-10-16

    申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    IPC分类号： H01L21/20

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Methods Of Forming Capacitors, And Methods Of Utilizing Silicon Dioxide-Containing Masking Structures
    3.
    发明申请
    Methods Of Forming Capacitors, And Methods Of Utilizing Silicon Dioxide-Containing Masking Structures 有权
    形成电容器的方法，以及使用含二氧化硅掩蔽结构的方法

    公开(公告)号：US20100099232A1

    公开(公告)日：2010-04-22

    申请号：US12252499

    申请日：2008-10-16

    申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    IPC分类号： H01L21/02 ,  H01G4/30 ,  H01L21/311

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Methods of Utilizing Silicon Dioxide-Containing Masking Structures
    4.
    发明申请
    Methods of Utilizing Silicon Dioxide-Containing Masking Structures 有权
    利用含二氧化硅掩蔽结构的方法

    公开(公告)号：US20110111597A1

    公开(公告)日：2011-05-12

    申请号：US13004967

    申请日：2011-01-12

    申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

    IPC分类号： H01L21/31

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures
    6.
    发明授权
    Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures 有权
    形成电容器的方法，以及利用含二氧化硅掩模结构的方法

    公开(公告)号：US08183157B2

    公开(公告)日：2012-05-22

    申请号：US13032492

    申请日：2011-02-22

    申请人： Naraji B Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

    发明人： Naraji B Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

    IPC分类号： H01L21/311

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    Methods of utilizing silicon dioxide-containing masking structures
    8.
    发明授权
    Methods of utilizing silicon dioxide-containing masking structures 有权
    利用含二氧化硅掩蔽结构的方法

    公开(公告)号：US08026148B2

    公开(公告)日：2011-09-27

    申请号：US13004967

    申请日：2011-01-12

    申请人： Niraj B. Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

    发明人： Niraj B. Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim J. Hofmann ,  Neil Joseph Greeley

    IPC分类号： H01L21/20

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

    摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

    摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

    WET ETCHANTS INCLUDING AT LEAST ONE ETCH BLOCKER
    10.
    发明申请
    WET ETCHANTS INCLUDING AT LEAST ONE ETCH BLOCKER 有权
    包括至少一个蚀刻块的软件包

    公开(公告)号：US20120187335A1

    公开(公告)日：2012-07-26

    申请号：US13413157

    申请日：2012-03-06

    申请人： Nishant Sinha ,  J. Neil Greeley

    发明人： Nishant Sinha ,  J. Neil Greeley

    IPC分类号： C09K13/08 ,  C09K13/00

    CPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/31055 ,  H01L21/31111

    摘要： Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

    摘要翻译： 在膜或其他结构中由接缝，键孔和其它异常形成的角部处的各向同性物质的各向同性除去方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。 这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角部比在结构或膜的平滑区域更高的材料去除速率。 还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。 还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的膜或其它结构的表面中的接缝，裂缝或凹陷的角落移除材料的半导体器件结构。