RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING AMIDE SOLVENT

    公开(公告)号:US20190354018A1

    公开(公告)日:2019-11-21

    申请号:US16476227

    申请日:2018-01-09

    Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

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