公开(公告)号：US12116279B2

公开(公告)日：2024-10-15

申请号：US17723595

申请日：2022-04-19

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Qiucheng Li ,  Xiaolong Liu ,  Eden B Aklile

IPC: C01B32/182 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B35/02 ,  H01L21/02 ,  H01L21/285

CPC classification number: C01B32/182 ,  C01B35/023 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/28506 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/06 ,  C01B2204/20

Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.

公开(公告)号：US20230008590A1

公开(公告)日：2023-01-12

申请号：US17723595

申请日：2022-04-19

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Qiucheng Li ,  Xiaolong Liu ,  Eden B Aklile

IPC: C01B32/184 ,  H01L21/02 ,  H01L21/285 ,  C01B35/02

Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.