公开(公告)号：US11282674B2

公开(公告)日：2022-03-22

申请号：US16798551

申请日：2020-02-24

Applicant: NuFlare Technology, Inc.

Inventor： Hideki Matsui

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/20

Abstract: In one embodiment, a charged particle beam writing method is for writing a pattern in a writing area on a substrate by irradiating a charged particle beam onto the substrate while moving the substrate to write stripes sequentially, each of the stripes having a width W and shapes obtained by dividing the writing area by the width W. The method includes performing S times (S is an integer greater than or equal to two) strokes, each of the strokes which is a process writing the stripes in a multiplicity of 2n (n is an integer greater than or equal to one) while shifting a reference point of each of the stripes in the width direction by a preset stripe shift amount and changing a moving direction of the substrate for each of the stripes, and writing while the reference point of the stripes in the each of the strokes in the width direction of the stripes is shifted by a preset stroke shift amount in each of the strokes.

公开(公告)号：US09281161B2

公开(公告)日：2016-03-08

申请号：US14614948

申请日：2015-02-05

Applicant: NuFlare Technology, Inc.

Inventor： Hideki Matsui

IPC: H01J37/305 ,  H01L21/027 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/147 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/30472 ,  H01J2237/31754 ,  H01J2237/31762 ,  H01J2237/31764

Abstract: An electron beam writing apparatus includes: a first aperture plate that shapes an electron beam emitted from an electron gun assembly; a second aperture plate onto which an electron beam of an aperture plate image passing through the first aperture plate is projected; and a first shaping deflector and a second shaping deflector which are provided between the first aperture plate and the second aperture plate, respectively, deflect an electron beam, control an irradiation position of the aperture plate image on the second aperture plate, and determine a shot shape and a shot size. The first shaping deflector deflects an electron beam such that the aperture plate image is positioned at a determined position in accordance with a shot shape and a shot size. The second shaping deflector deflects an electron beam deflected by the first shaping deflector and controls formation of a desirable shot size.

Abstract translation: 电子束写入装置包括：形成从电子枪组件发射的电子束的第一孔板; 第二孔板，穿过第一孔板的孔板图像的电子束投射到其上; 以及分别设置在第一孔板和第二孔板之间的第一成形偏转器和第二成形偏转器，偏转电子束，控制孔板图像在第二孔板上的照射位置，并且确定射出 形状和射击大小。 第一成形偏转器偏转电子束，使得孔板图像根据射出形状和射出尺寸位于确定的位置。 第二成形偏转器使由第一成形偏转器偏转的电子束偏转并且控制形成期望的镜头尺寸。

公开(公告)号：US20190333734A1

公开(公告)日：2019-10-31

申请号：US16380244

申请日：2019-04-10

Applicant: NuFlare Technology, Inc.

Inventor： Hideki Matsui

IPC: H01J37/317 ,  H01J37/304

Abstract: In one embodiment, a charged particle beam writing apparatus includes a storage storing coefficients of a calculation formula for calculating a correction amount of a beam emission position according to an atmospheric pressure, a correction amount calculator calculating a correction amount of the beam emission position from a measured value of an atmospheric pressure sensor and the calculation formula using the coefficients, a writer writing a pattern on a substrate using a charged particle beam with the beam emission position adjusted based on shot data and the correction amount, a correction residual calculator calculating a correction residual for the emission position of the charged particle beam using a result of detection by a detector, and an updater updating the coefficients, when there is correlation between change in the correction residual and change in the atmospheric pressure.

公开(公告)号：US09812284B2

公开(公告)日：2017-11-07

申请号：US15070679

申请日：2016-03-15

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Hideki Matsui

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1472 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/103 ,  H01J2237/1504 ,  H01J2237/2485 ,  H01J2237/3175 ,  H01J2237/31754 ,  H01J2237/31762 ,  H01J2237/31766

Abstract: In one embodiment, a charged particle beam drawing apparatus deflects a charged particle beam with a deflector to draw a pattern. The apparatus includes a storage unit that stores an approximate formula indicating a correspondence relationship between a settling time for a DAC amplifier that controls the deflector, and a position shift amount, from a design position, of a drawn position of each evaluation pattern drawn on a first substrate while the settling time and an amount of deflection by the deflector are changed, a shot position correction unit that creates a correction formula indicating a relationship between an amount of deflection and a shot position shift amount at the settling time, from the approximate formula and the settling time for the DAC amplifier based on an amount of deflection of a shot, obtains a position correction amount by using the amount of deflection of the shot and the correction formula, and corrects a shot position defined by the shot data based on the position correction amount, and a drawing unit that performs drawing by using the shot data with a corrected shot position.