公开(公告)号：US20180051369A1

公开(公告)日：2018-02-22

申请号：US15561129

申请日：2016-03-17

Applicant: NuvoSun, Inc.

Inventor： Bruce D. HACHTMANN ,  Karnig Ross Baron PORTER ,  Aaron A. QUITUGUA-FLORES ,  Arthur C. WALL

IPC: C23C14/24 ,  C23C14/56 ,  C23C14/54 ,  C23C14/06 ,  H01L31/0216 ,  H01L31/0392

CPC classification number: C23C14/243 ,  C23C14/0623 ,  C23C14/24 ,  C23C14/541 ,  C23C14/542 ,  C23C14/562 ,  C23C14/566 ,  H01L31/02167 ,  H01L31/03923

Abstract: An example apparatus for depositing a predetermined amount of a material onto a substrate includes a container having a cavity configured to contain the material. The container and the cavity are elongated along a first axis of the container. The apparatus further includes one or more heaters that are (i) elongated along the first axis and (ii) configured to heat and evaporate the material by heating the container. The apparatus further includes a conveyor for moving the substrate in a direction substantially perpendicular to the first axis of the container and one or more openings in the container distributed along the first axis. The one or more openings provide fluid communication between a region external to the container and the cavity. A process for depositing the predetermined amount of the material onto the substrate is also disclosed herein.

公开(公告)号：US20170167028A1

公开(公告)日：2017-06-15

申请号：US15319528

申请日：2015-06-08

Applicant: NUVOSUN, INC.

Inventor： Arthur C. WALL ,  John Kwangyong KIM ,  Eugene BYKOV ,  Sam KAO ,  Qiongzhong JIANG ,  Bruce D. HACHTMANN

IPC: C23C16/54 ,  C23C16/46 ,  C23C16/52 ,  C23C16/30 ,  C23C16/448

CPC classification number: C23C16/545 ,  C23C8/02 ,  C23C8/08 ,  C23C16/305 ,  C23C16/4485 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02587 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541

Abstract: Methods and systems are disclosed for processing a precursor material. The method includes introducing a substrate having a precursor material deposited on a surface of the substrate into a first zone of a vacuum chamber. The precursor material comprises copper, indium, and at least one of gallium, selenium, sulfur, sodium, antimony, boron, aluminum, and silver. The method further includes, within the first zone, heating the precursor material to a target reaction temperature within a range of about 270° C. to about 490° C. The method further includes maintaining a selenium vapor in a second zone of the vacuum chamber, and after heating the precursor material to the target reaction temperature, introducing the precursor material and the substrate to the second zone of the vacuum chamber.

公开(公告)号：US20160273097A1

公开(公告)日：2016-09-22

申请号：US15035227

申请日：2014-10-16

Applicant: NUVOSUN, INC.

Inventor： Arthur C. WALL ,  Sam KAO ,  John Kwangyong KIM ,  Bruce D. HACHTMANN ,  Qiongzhong JIANG ,  Karnig Ross Baron PORTER

IPC: C23C14/54 ,  C23C14/24 ,  C23C14/06

CPC classification number: C23C14/546 ,  C23C14/0623 ,  C23C14/243 ,  C23C14/543

Abstract: Methods and systems are disclosed for monitoring vapor in a vacuum reactor apparatus. An system has (a) a vacuum chamber, (b) a vapor source housed in the vacuum chamber, wherein the vapor source is configured to generate a vapor, (c) a reaction vessel housed in the vacuum chamber and coupled to the vapor source, where the reaction vessel has an outlet to the vacuum chamber, and where the reaction vessel is configured to receive the vapor from the vapor source and to emit a portion of the received vapor into the vacuum chamber through the outlet, and (d) one or more sensors housed in the vacuum chamber, where the one or more sensors are configured to detect the vapor emitted through the outlet.

Abstract translation: 公开了用于监测真空反应器装置中的蒸气的方法和系统。 一种系统具有（a）真空室，（b）容纳在真空室中的蒸气源，其中蒸汽源被配置成产生蒸气，（c）容纳在真空室中的反应容器，并与蒸气源 ，其中反应容器具有到真空室的出口，并且其中反应容器构造成从蒸汽源接收蒸气并且通过出口将一部分接收的蒸气排放到真空室中，并且（d）一个 或更多的传感器，其中所述一个或多个传感器被配置为检测通过所述出口排出的蒸汽。

公开(公告)号：US20170145566A1

公开(公告)日：2017-05-25

申请号：US15319521

申请日：2015-06-08

Applicant: NUVOSUN, INC.

Inventor： Preston CLOVER ,  Bruce D. HACHTMANN ,  Gang Grant PENG ,  Arthur C. WALL

IPC: C23C18/02 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/0445 ,  H01L31/0224 ,  C23C18/12 ,  H01L31/0749

CPC classification number: C23C18/02 ,  C23C18/1208 ,  C23C18/1291 ,  H01L31/022466 ,  H01L31/03928 ,  H01L31/0445 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1836 ,  H01L31/1864 ,  Y02E10/541

Abstract: Disclosed are methods and systems for forming a layer on a web with reduced levels of particulates. The layer is formed from a fluid mixture(s) or solution of chemical reagents that react to form the layer. The system includes a conveyor device provided configured to carry the web within the chamber while the first surface of the web undergoes one or more processing steps; a first fluid delivery apparatus and a second fluid delivery apparatus, and a first fluid removal apparatus. The first fluid removal apparatus is positioned within a space arranged between the first and the second delivery apparatuses.