-
公开(公告)号：US10263067B2
公开(公告)日：2019-04-16
申请号：US15593366
申请日：2017-05-12
Applicant: NXP USA, INC.
Inventor： Joseph Gerard Schultz , Yu-Ting Wu , Shishir Ramasare Shukla , Enver Krvavac , Hussain Hasanali Ladhani , Damon G. Holmes
Abstract: A radio frequency (RF) chip capacitor circuit and structure are provided. The circuit and structure include a plurality of capacitors connected in series. Each capacitor of the plurality includes a first plate formed from a first metal layer and a second plate formed from a second metal layer. A first two adjacent capacitors of the plurality include first plates formed in a first contiguous portion of the first metal layer or second plates formed in a second contiguous portion of the second metal layer. Each capacitor of the plurality may include a dielectric layer disposed between the first plate and the second plate.
-
Patent Agency Ranking
公开(公告)号：US10284147B2
公开(公告)日：2019-05-07
申请号：US15379789
申请日：2016-12-15
Applicant: NXP USA, Inc.
Inventor： Yu-Ting Wu , Enver Krvavac , Joseph Gerard Schultz
IPC: H03F3/68 , H03F1/02 , H03F1/56 , H03F3/24 , H03F3/195 , H01L23/66 , H01L23/538 , H01L23/00 , H03F3/189 , H01L27/085
Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt inductance circuit is coupled to the output of either or both of the first and/or second amplifier die. Each shunt inductance circuit at least partially resonates out the output capacitance of the amplifier die to which it is connected to enable the electrical length of the phase shift and impedance inversion element to be increased.
-
公开(公告)号：US20180175799A1
公开(公告)日：2018-06-21
申请号：US15379789
申请日：2016-12-15
Applicant: NXP USA, Inc.
Inventor： Yu-Ting Wu , Enver Krvavac , Joseph Gerard Schultz
CPC classification number: H03F1/0288 , H01L23/538 , H01L23/66 , H01L24/49 , H01L27/085 , H01L2223/6611 , H01L2223/6644 , H01L2223/6655 , H01L2223/6683 , H01L2224/4917 , H01L2224/49176 , H03F1/565 , H03F3/189 , H03F3/195 , H03F3/24 , H03F3/245 , H03F2200/114 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/432 , H03F2200/451
Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt inductance circuit is coupled to the output of either or both of the first and/or second amplifier die. Each shunt inductance circuit at least partially resonates out the output capacitance of the amplifier die to which it is connected to enable the electrical length of the phase shift and impedance inversion element to be increased.
-
4.发明授权公开(公告)号：US10284146B2
公开(公告)日：2019-05-07
申请号：US15366550
申请日：2016-12-01
Applicant: NXP USA, Inc.
Inventor： Yu-Ting Wu , Nick Yang , Joseph Gerard Schultz
IPC: H03F3/68 , H03F1/02 , H03F3/195 , H03F3/21 , H01L23/66 , H01L23/00 , H01L23/538 , H03F3/189 , H03F3/24
Abstract: An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.
-
公开(公告)号：US10236852B2
公开(公告)日：2019-03-19
申请号：US15373953
申请日：2016-12-09
Applicant: NXP USA, INC.
Inventor： Joseph Gerard Schultz , Hussain Hasanali Ladhani , Enver Krvavac , Yu-Ting Wu
Abstract: An integrated circuit (IC) includes an input pad and an output pad separated from the input pad by a predetermined distance. A plurality of capacitors are coupled in series between the input pad and the output pad. The plurality of capacitors are distributed to substantially span the predetermined distance. An inductor is formed from a bond wire, having a first end attached at the first input pad and a second end attached at the output pad. The inductor and plurality of capacitors configured to form a predetermined open circuit resonance.
-
6.发明申请公开(公告)号：US20180159479A1
公开(公告)日：2018-06-07
申请号：US15366550
申请日：2016-12-01
Applicant: NXP USA, Inc.
Inventor： Yu-Ting Wu , Nick Yang , Joseph Gerard Schultz
CPC classification number: H03F1/0288 , H01L23/538 , H01L23/66 , H01L24/06 , H01L24/46 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2223/6683 , H01L2224/04042 , H01L2224/4917 , H01L2224/49176 , H03F3/189 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/114 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/432 , H03F2200/451 , H03F2203/21103 , H03F2203/21106
Abstract: An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.
-
-
-
-
-
Search Results
6
records
(took 0.015 seconds)
