Aluminum nitride materials and members used for the production of semiconductors
    8.
    发明授权
    Aluminum nitride materials and members used for the production of semiconductors 有权
    氮化铝材料和用于半导体生产的部件

    公开(公告)号:US06919287B2

    公开(公告)日:2005-07-19

    申请号:US10417962

    申请日:2003-04-17

    CPC分类号: C04B35/581

    摘要: An aluminum nitride material having a high thermal conductivity and reduced room temperature volume resistivity is provided. The aluminum nitride material has an interconnected intergranular phase that functions as an electrically conductive phase. The content of the conductive phase is not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile: Content of the conductive phase (%)=(Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase)×100. The aluminum nitride material has an electric current response index in a range of 0.9 to 1.1, defined according to the following formula: Electric current response index=(Electric current Aat 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).

    摘要翻译: 提供具有高导热性和降低室温体积电阻率的氮化铝材料。 氮化铝材料具有互相作用的导电相的晶间相。 导电相的含量不高于20%,基于X射线衍射曲线,根据下式计算:导电相的含量(%)=(导电相/集成电路的最强峰的集成强度 强度最强的氮化铝相峰)×100。 氮化铝材料的电流响应指数在0.9至1.1的范围内,根据下式定义:电流响应指数=(施加电压5秒后的电流/电压后60秒的电流 被申请;被应用)。