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    Method of manufacturing semiconductor device having elements isolated by trench
    1.
    发明授权
    Method of manufacturing semiconductor device having elements isolated by trench 失效
    制造具有由沟槽隔离的元件的半导体器件的方法

    公开(公告)号：US5332683A

    公开(公告)日：1994-07-26

    申请号：US15672

    申请日：1993-02-09

    申请人： Naoto Miyashita ,  Koichi Takahashi ,  Hironori Sonobe

    发明人： Naoto Miyashita ,  Koichi Takahashi ,  Hironori Sonobe

    IPC分类号： H01L21/32 ,  H01L21/763 ,  H01L21/265 ,  H01L29/70

    CPC分类号： H01L21/32 ,  H01L21/763

    摘要： This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench is formed to surround an element region of a silicon substrate by anisotropic etching. A nonoxide film such as a silicon nitride film is selectively formed on the upper surface of the element region. Thermal oxidation is performed using the nonoxide film as a mask to form an oxide film on the inner face of the trench and the upper surface of a field region. Thereafter, a polysilicon layer is buried in the trench, and after the surface of the polysilicon layer is flattened, a capping oxide film is formed on the upper surface of the trench. In addition, a non-oxide film is formed to have an interval between the end of the nonoxide film and the trench of 2 .mu.m or more.

    摘要翻译： 本发明涉及一种制造半导体器件的方法，该半导体器件具有通过沟槽隔离的元件。 通过各向异性蚀刻形成沟槽以包围硅衬底的元件区域。 在元件区域的上表面上选择性地形成诸如氮化硅膜的非氧化物膜。 使用非氧化物膜作为掩模进行热氧化，以在沟槽的内表面和场区的上表面上形成氧化膜。 此后，多晶硅层被埋在沟槽中，并且在多晶硅层的表面变平时，在沟槽的上表面上形成覆盖氧化物膜。 此外，形成非氧化物膜，其在非氧化物膜的端部和沟槽之间具有2μm以上的间隔。

    Vertical heat-treatment apparatus for semiconductor parts
    3.
    发明授权
    Vertical heat-treatment apparatus for semiconductor parts 失效
    半导体零件立式热处理装置

    公开(公告)号：US5127365A

    公开(公告)日：1992-07-07

    申请号：US659274

    申请日：1991-02-22

    申请人： Mitsutoshi Koyama ,  Koichi Takahashi ,  Hironori Sonobe

    发明人： Mitsutoshi Koyama ,  Koichi Takahashi ,  Hironori Sonobe

    IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31

    CPC分类号： H01L21/67115

    摘要： A heat-treatment apparatus includes a quartz heat-treatment tube having a vertically set axis in which a heat-treatment gas is supplied from its lower portion, and a quartz cap to be mounted on an upper opening portion of the heat-treatment tube. An opening is formed in a central portion of the cap, a quartz rod is inserted through the opening along the axis of the heat-treatment tube, and semiconductor parts to be heat-treated are held by the rod. A first exhaust duct is formed in a side surface of the heat-treatment tube at a position higher than at least the semiconductor parts held by the rod and exhausts the heat-treatment gas in the heat-treatment tube. A ring-like chamber open toward the inner surface of the cap is formed in the outer circumferential surface of the heat-treatment tube in a position close to the upper opening surface, and a second exhaust duct communicates with this chamber. The chamber communicates with the opening portion formed in the cap in the outer circumferential portion of the rod and communicates with the interior of the heat-treatment tube, thereby exhausting an external air drawn from the opening together with the heat-treatment gas in the heat-treatment tube.

    摘要翻译： 热处理装置包括：石英热处理管，其具有从其下部供给热处理气体的竖直设定轴;以及石英盖，安装在所述热处理管的上开口部。 在盖的中央部形成有开口部，沿着热处理管的轴线将石英棒贯穿该开口部，通过该杆保持被热处理的半导体部件。 第一排气管在热处理管的侧表面形成在比由杆保持的至少半导体部分高的位置，并排出热处理管中的热处理气体。 在靠近上开口表面的位置，在热处理管的外周面上形成有朝向盖的内表面开口的环状室，第二排气管与该室连通。 该室与杆的外周部形成的开口部连通，与热处理管的内部连通，从而将与开口一起从外部吸入的外部空气与热处理气体一起排出 处理管。

    Method of treating semiconductor substrates
    6.
    发明授权
    Method of treating semiconductor substrates 失效
    处理半导体衬底的方法

    公开(公告)号：US5380399A

    公开(公告)日：1995-01-10

    申请号：US120436

    申请日：1993-09-14

    申请人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama

    发明人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama

    IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/31 ,  B44C1/22 ,  C03C15/00

    CPC分类号： H01L21/02046

    摘要： To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature 150.degree. C. or lower; a step 2 of heating the heat treating chamber up to about 200.degree. C. to emit moisture adhering to the semiconductor substrate; a step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and a step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.

    摘要翻译： 为了在其表面上不形成氧化膜来热处理半导体衬底，对半导体衬底进行热处理的方法包括：将半导体衬底承载在加热到150℃或更低温度的热处理室中的步骤1 ; 将热处理室加热至约200℃的步骤2，以发出附着在半导体基板上的水分; 将蚀刻气体引入到所述热处理室中以蚀刻形成在所述半导体衬底的表面上的氧化膜的步骤3; 以及将热处理室内的温度升高至热处理温度以热处理半导体衬底的步骤4。

    Device for thermal treatment and film forming process
    9.
    发明授权
    Device for thermal treatment and film forming process 失效
    热处理和成膜工艺装置

    公开(公告)号：US5346555A

    公开(公告)日：1994-09-13

    申请号：US98097

    申请日：1993-07-28

    申请人： Shinji Nunotani ,  Koichi Takahashi ,  Naoto Miyashita

    发明人： Shinji Nunotani ,  Koichi Takahashi ,  Naoto Miyashita

    IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B25/08 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/463 ,  C23C16/46 ,  C30B25/08 ,  H01L21/67115

    摘要： A device for a thermal treatment process and a film forming process includes a chamber for forming a thin-film on a semiconductor substrate under high temperatures, a heater positioned to enclose the outer periphery of the chamber, for heating the inside of the chamber to a high temperature; and insulator positioned to enclose the outer periphery of the heater. The device further has a first space formed between the chamber and the heater, a second space formed between the heater and the insulator, first and second exhaust sections provided for exhausting air from the first and second spaces. In the device, prior to inserting the semiconductor substrate into and removing the semiconductor substrate from the chamber, high temperature air is exhausted from the first and second spaces by the first and second exhaust sections, respectively, to cool inside of the chamber.

    摘要翻译： 用于热处理工艺和成膜工艺的装置包括：用于在高温下在半导体衬底上形成薄膜的腔室，设置成包围腔室外周的加热器，用于将腔室内部加热到 高温; 绝缘体被定位成包围加热器的外周。 所述装置还具有形成在所述室和所述加热器之间的第一空间，形成在所述加热器和所述绝缘体之间的第二空间，设置成用于从所述第一空间和所述第二空间排出空气的第一和第二排气部。 在该装置中，在将半导体衬底插入室内并从半导体衬底移除之前，高温空气分别通过第一和第二排气部分从第一和第二空间排出，以在室内部冷却。

    Semiconductor manufacturing apparatus including temperature control mechanism
    10.
    再颁专利
    Semiconductor manufacturing apparatus including temperature control mechanism 失效
    半导体制造装置包括温度控制机构

    公开(公告)号：USRE36328E

    公开(公告)日：1999-10-05

    申请号：US915608

    申请日：1997-08-21

    申请人： Naoto Miyashita ,  Koichi Takahashi ,  Hiroshi Kinoshita

    发明人： Naoto Miyashita ,  Koichi Takahashi ,  Hiroshi Kinoshita

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67115

    摘要： A semiconductor manufacturing apparatus includes a furnace having a tubular body with inner and outer tubular members. A boat having wafers mounted thereon is positioned inside the inner tubular member. Temperature control inside the tubular body is provided by a thermocouple device located between the inner and outer tubular members. A mixture of dichlorosilane gas and ammonium gas formed by a mixing nozzle at a temperature which is lower than the temperature in the tubular body is supplied to the wafers from positions juxtaposed with the wafers mounted on the boat.

    摘要翻译： 半导体制造装置包括具有带有内管状构件和外管状构件的管状体的炉。 具有安装在其上的晶片的船定位在内管状构件的内部。 管状体内的温度控制由位于内管状构件和外管状构件之间的热电偶装置提供。 在低于管状体温度的混合喷嘴形成的二氯硅烷气体和铵气体的混合物从与安装在船上的晶片并置的位置供应到晶片。