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226 条记录 (耗时 0.025 秒)

    Vertical heat-treatment apparatus for semiconductor parts
    1.
    发明授权
    Vertical heat-treatment apparatus for semiconductor parts 失效
    半导体零件立式热处理装置

    公开(公告)号：US5127365A

    公开(公告)日：1992-07-07

    申请号：US659274

    申请日：1991-02-22

    申请人： Mitsutoshi Koyama ,  Koichi Takahashi ,  Hironori Sonobe

    发明人： Mitsutoshi Koyama ,  Koichi Takahashi ,  Hironori Sonobe

    IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31

    CPC分类号： H01L21/67115

    摘要： A heat-treatment apparatus includes a quartz heat-treatment tube having a vertically set axis in which a heat-treatment gas is supplied from its lower portion, and a quartz cap to be mounted on an upper opening portion of the heat-treatment tube. An opening is formed in a central portion of the cap, a quartz rod is inserted through the opening along the axis of the heat-treatment tube, and semiconductor parts to be heat-treated are held by the rod. A first exhaust duct is formed in a side surface of the heat-treatment tube at a position higher than at least the semiconductor parts held by the rod and exhausts the heat-treatment gas in the heat-treatment tube. A ring-like chamber open toward the inner surface of the cap is formed in the outer circumferential surface of the heat-treatment tube in a position close to the upper opening surface, and a second exhaust duct communicates with this chamber. The chamber communicates with the opening portion formed in the cap in the outer circumferential portion of the rod and communicates with the interior of the heat-treatment tube, thereby exhausting an external air drawn from the opening together with the heat-treatment gas in the heat-treatment tube.

    摘要翻译： 热处理装置包括：石英热处理管，其具有从其下部供给热处理气体的竖直设定轴;以及石英盖，安装在所述热处理管的上开口部。 在盖的中央部形成有开口部，沿着热处理管的轴线将石英棒贯穿该开口部，通过该杆保持被热处理的半导体部件。 第一排气管在热处理管的侧表面形成在比由杆保持的至少半导体部分高的位置，并排出热处理管中的热处理气体。 在靠近上开口表面的位置，在热处理管的外周面上形成有朝向盖的内表面开口的环状室，第二排气管与该室连通。 该室与杆的外周部形成的开口部连通，与热处理管的内部连通，从而将与开口一起从外部吸入的外部空气与热处理气体一起排出 处理管。

    Method of manufacturing semiconductor device having elements isolated by trench
    3.
    发明授权
    Method of manufacturing semiconductor device having elements isolated by trench 失效
    制造具有由沟槽隔离的元件的半导体器件的方法

    公开(公告)号：US5332683A

    公开(公告)日：1994-07-26

    申请号：US15672

    申请日：1993-02-09

    申请人： Naoto Miyashita ,  Koichi Takahashi ,  Hironori Sonobe

    发明人： Naoto Miyashita ,  Koichi Takahashi ,  Hironori Sonobe

    IPC分类号： H01L21/32 ,  H01L21/763 ,  H01L21/265 ,  H01L29/70

    CPC分类号： H01L21/32 ,  H01L21/763

    摘要： This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench is formed to surround an element region of a silicon substrate by anisotropic etching. A nonoxide film such as a silicon nitride film is selectively formed on the upper surface of the element region. Thermal oxidation is performed using the nonoxide film as a mask to form an oxide film on the inner face of the trench and the upper surface of a field region. Thereafter, a polysilicon layer is buried in the trench, and after the surface of the polysilicon layer is flattened, a capping oxide film is formed on the upper surface of the trench. In addition, a non-oxide film is formed to have an interval between the end of the nonoxide film and the trench of 2 .mu.m or more.

    摘要翻译： 本发明涉及一种制造半导体器件的方法，该半导体器件具有通过沟槽隔离的元件。 通过各向异性蚀刻形成沟槽以包围硅衬底的元件区域。 在元件区域的上表面上选择性地形成诸如氮化硅膜的非氧化物膜。 使用非氧化物膜作为掩模进行热氧化，以在沟槽的内表面和场区的上表面上形成氧化膜。 此后，多晶硅层被埋在沟槽中，并且在多晶硅层的表面变平时，在沟槽的上表面上形成覆盖氧化物膜。 此外，形成非氧化物膜，其在非氧化物膜的端部和沟槽之间具有2μm以上的间隔。

    Method of treating semiconductor substrates
    5.
    发明授权
    Method of treating semiconductor substrates 失效
    处理半导体衬底的方法

    公开(公告)号：US5380399A

    公开(公告)日：1995-01-10

    申请号：US120436

    申请日：1993-09-14

    申请人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama

    发明人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama

    IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/31 ,  B44C1/22 ,  C03C15/00

    CPC分类号： H01L21/02046

    摘要： To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature 150.degree. C. or lower; a step 2 of heating the heat treating chamber up to about 200.degree. C. to emit moisture adhering to the semiconductor substrate; a step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and a step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.

    摘要翻译： 为了在其表面上不形成氧化膜来热处理半导体衬底，对半导体衬底进行热处理的方法包括：将半导体衬底承载在加热到150℃或更低温度的热处理室中的步骤1 ; 将热处理室加热至约200℃的步骤2，以发出附着在半导体基板上的水分; 将蚀刻气体引入到所述热处理室中以蚀刻形成在所述半导体衬底的表面上的氧化膜的步骤3; 以及将热处理室内的温度升高至热处理温度以热处理半导体衬底的步骤4。

    Water electrolysis apparatus
    7.
    发明授权
    Water electrolysis apparatus 有权
    水电解装置

    公开(公告)号：US08709220B2

    公开(公告)日：2014-04-29

    申请号：US13025815

    申请日：2011-02-11

    申请人： Koji Nakazawa ,  Masanori Okabe ,  Eiji Haryu ,  Kenji Taruya ,  Koichi Takahashi

    发明人： Koji Nakazawa ,  Masanori Okabe ,  Eiji Haryu ,  Kenji Taruya ,  Koichi Takahashi

    IPC分类号： C25B9/18 ,  C25B9/00 ,  C25B1/12

    CPC分类号： C25B9/206 ,  C25B1/12 ,  C25B9/18 ,  Y02E60/366

    摘要： Each unit cell of a water electrolysis apparatus includes a pair of an anode separator and a cathode separator and a membrane electrode assembly interposed between the pair of separators. The anode separator has a first flow field to which water is supplied, and the cathode separator has a second flow field for producing high-pressure hydrogen through electrolysis of the water. A second seal groove for receiving a second seal member is disposed annularly around the second flow field. A pressure-releasing chamber is disposed outwardly of the second seal groove, is capable of communicating with the second seal groove and communicates with the outside through a depressurizing channel.

    摘要翻译： 水电解装置的每个单电池包括一对阳极分离器和阴极分离器以及插入在该对分离器之间的膜电极组件。 阳极分离器具有供给水的第一流场，阴极分离器具有用于通过电解电解产生高压氢的第二流场。 用于接收第二密封构件的第二密封槽环绕第二流场设置。 压力释放室设置在第二密封槽的外侧，能够与第二密封槽连通并通过减压通道与外部连通。

    VEHICLE BATTERY UNIT
    8.
    发明申请
    VEHICLE BATTERY UNIT 审中-公开
    车辆电池单元

    公开(公告)号：US20130330587A1

    公开(公告)日：2013-12-12

    申请号：US13882822

    申请日：2011-10-13

    申请人： Koichi Takahashi ,  Eiji Koike ,  Daisuke Arai ,  Takurou Kamada ,  Kentaro Shibuya ,  Harumi Takedomi

    发明人： Koichi Takahashi ,  Eiji Koike ,  Daisuke Arai ,  Takurou Kamada ,  Kentaro Shibuya ,  Harumi Takedomi

    IPC分类号： H01M2/10

    CPC分类号： H01M2/1077 ,  B60K1/04 ,  B60K2001/005 ,  B60K2001/0416 ,  H01M10/625 ,  H01M10/663

    摘要： In a vehicle battery unit, since a second support plate (30B) and a second end plate (29B) of a second battery module (22B) having a plurality of battery cells (21) stacked are placed on top of a first support plate (30A) and a first end plate (29A) of a first battery module (22A) having a plurality of the battery cells (21), it is possible to prevent the weight of the second battery module (22B) from being imposed on the battery cells (21) of the first battery module (22A). Moreover, since it is not necessary to provide on the exterior of the first battery module (22A) a member for supporting the weight of the second battery module (22B), it is possible to reduce the dimensions of the first battery module (22A).

    摘要翻译： 在车辆电池单元中，由于具有多个电池单元（21）的堆叠的第二电池模块（22B）的第二支撑板（30B）和第二端板（29B）被放置在第一支撑板 30A）和具有多个电池单元（21）的第一电池模块（22A）的第一端板（29A），可以防止第二电池模块（22B）的重量施加在电池 第一电池模块（22A）的电池（21）。 此外，由于不需要在第一电池模块（22A）的外部设置用于支撑第二电池模块（22B）的重量的构件，因此可以减小第一电池模块（22A）的尺寸， 。

    Spectacles-mounted display device
    9.
    发明授权
    Spectacles-mounted display device 有权
    眼镜架显示装置

    公开(公告)号：US08337015B2

    公开(公告)日：2012-12-25

    申请号：US12870406

    申请日：2010-08-27

    申请人： Ryohei Sugihara ,  Seiji Tatsuta ,  Yoichi Iba ,  Koichi Takahashi

    发明人： Ryohei Sugihara ,  Seiji Tatsuta ,  Yoichi Iba ,  Koichi Takahashi

    IPC分类号： G02C1/00

    CPC分类号： G02C9/00 ,  G02B27/0172 ,  G02B2027/011 ,  G02B2027/0123 ,  G02B2027/0154 ,  G02B2027/0178 ,  G02C7/086

    摘要： A spectacles-type image display device having an image output unit that includes a display element that displays images and is disposed on a spectacle frame and a reflection unit that is disposed adjacent to at least one of spectacle lenses and reflects the image light that is output from the image output unit toward the eyeball so that the viewer can see a virtual image of the image is provided. The reflection unit is a reflection member having a positive refractive power and an effective luminous flux that is output from the image output unit and reaches the eyeball of the viewer is configured so that the width of the luminous flux perpendicular to an optical axis is minimum at the reflection unit with respect to the optical axis cross-section parallel to an incident surface of the optical axis relative to the reflection unit.

    摘要翻译： 一种眼镜型图像显示装置，其具有图像输出单元，该图像输出单元包括显示图像并设置在眼镜架上的显示元件和与眼镜镜片中的至少一个相邻配置的反射单元，并且反射输出的图像光 从图像输出单元朝向眼球，使得观看者可以看到图像的虚拟图像。 反射单元是具有正折射力的反射构件和从图像输出单元输出并到达观察者的眼球的有效光束被配置为使得垂直于光轴的光束的宽度最小 反射单元相对于与光轴相对于反射单元的入射表面平行的光轴截面。