公开(公告)号：US20060022914A1

公开(公告)日：2006-02-02

申请号：US11194771

申请日：2005-08-02

申请人： Naoya Kimura ,  Tetsuro Hara ,  Akira Kondo ,  Takayuki Shimizu ,  Haruyo Takayanagi ,  Shinichi Fukuzako ,  Ichirou Takayama

发明人： Naoya Kimura ,  Tetsuro Hara ,  Akira Kondo ,  Takayuki Shimizu ,  Haruyo Takayanagi ,  Shinichi Fukuzako ,  Ichirou Takayama

IPC分类号： G09G3/30

CPC分类号： G09G3/3216 ,  G09G3/2014 ,  G09G2320/0233 ,  G09G2320/0285

摘要： A driving circuit drives a display panel having a matrix of picture elements and electrodes. The driving circuit includes a memory storing compensation data for compensating for position-dependent brightness differences between the picture elements. The brightness differences are due to the stray resistance and capacitance of the picture elements and electrodes. A correction circuit modifies image data according to the compensation data to generate control signals, which are used to control drivers that drive the picture elements via the electrodes. The modified image data produce a display with an even average brightness over the entire display panel.

摘要翻译： 驱动电路驱动具有像素和电极矩阵的显示面板。 驱动电路包括存储用于补偿像素之间的与位置有关的亮度差的补偿数据的存储器。 亮度差异是由于像素和电极的杂散电阻和电容引起的。 校正电路根据补偿数据修改图像数据，以产生用于控制通过电极驱动图像元素的驱动器的控制信号。 经修改的图像数据在整个显示面板上产生具有均匀平均亮度的显示。

公开(公告)号：US06348702B1

公开(公告)日：2002-02-19

申请号：US09241732

申请日：1999-02-02

申请人： Ichirou Takayama ,  Michio Arai

发明人： Ichirou Takayama ,  Michio Arai

IPC分类号： H01L29786

CPC分类号： H01L27/3262 ,  H01L29/66757 ,  H01L29/78675

摘要： In an image display system using an organic EL element, variation of light intensity of pixels on a display panel due to variation of characteristics of a bias transistor for energizing said EL element is improved. An active layer of said bias transistor is formed by polysilicon, and length and width of a gate of said transistor is at least 10 times as large as average diameter of a crystal grain of polysilicon in said active layer.

摘要翻译： 在使用有机EL元件的图像显示系统中，由于用于激励所述EL元件的偏置晶体管的特性的变化，显示面板上的像素的光强度的变化得到改善。 所述偏置晶体管的有源层由多晶硅形成，并且所述晶体管的栅极的长度和宽度是所述有源层中多晶硅晶粒的平均直径的至少10倍。

公开(公告)号：US5442198A

公开(公告)日：1995-08-15

申请号：US189498

申请日：1994-01-31

申请人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

发明人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L31/105 ,  H04N1/031 ,  H01L21/00 ,  H01L29/161 ,  H01L29/34

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/78675 ,  H01L31/1055 ,  H04N1/0313 ,  H04N1/0316 ,  Y10S257/905

摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.

摘要翻译： 在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。 所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍至4倍的范围内，所述平均直径为250安培-8000安培，所述膜厚度为500安培-2000安。 半导体膜（2'）中的氧的密度小于2×10 19 / cm 3。 具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。 通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。 由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。 由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。

公开(公告)号：US5576222A

公开(公告)日：1996-11-19

申请号：US324737

申请日：1994-10-18

申请人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

发明人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

IPC分类号： H01L31/20 ,  H01L27/14 ,  H01L21/336 ,  H01L21/71 ,  H01L27/01

CPC分类号： H01L31/20 ,  Y02E10/50

摘要： An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

摘要翻译： 图像传感器（10）具有基板（1），具有放置在所述基板（1）上的源极区域和漏极区域的有源层（3'），放置在所述有源层上的栅极绝缘层（4'）， 和栅极绝缘层（4'）上的栅电极层（5'）。 有源层（3'）通过以下步骤制造：通过低压CVD法使用乙硅烷气体（Si 2 H 6）生成非晶硅层，并且在500-650℃下在氮气中退火所述层4-50小时 大气层。 栅极绝缘层（4'）通过在900〜-1100℃的高温下氧化活性层的表面而产生。高温下的氧化过程改善了退火过程并改善了活性层。 因此，获得具有均匀特性的图像传感器，具有提高的生产率。

公开(公告)号：US5298455A

公开(公告)日：1994-03-29

申请号：US825552

申请日：1992-01-27

申请人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

发明人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L31/105 ,  H04N1/031 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/78675 ,  H01L31/1055 ,  H04N1/0313 ,  H04N1/0316 ,  Y10S257/905

摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.

摘要翻译： 在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。 所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍和4倍之间的范围内，所述平均直径为250（Aangstroem）-8000（Aangstroem），所述膜厚度为500（Aangstroem） -2000（Aangstroem）。 半导体膜（2'）中的氧的密度小于2×1019 / cm3。 具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。 通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。 由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。 由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。