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公开(公告)号：US20130087285A1
公开(公告)日：2013-04-11
申请号：US13592129
申请日：2012-08-22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3211 , H01J37/32192 , H01J37/32302 , H01J37/32449 , H01J2237/006 , H01J2237/3341
摘要： A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.
摘要翻译： 无电极系统的等离子体蚀刻装置可以使自由基密度均匀化，并提高蚀刻的均匀性。 无电极系统的等离子体蚀刻装置包括减压室，气体供给机构，电介质窗，等离子体产生单元，放置样品的台和连接到载物台的第一RF电源。 等离子体蚀刻装置还包括用于供应第二气体的气体引入机构和用于输入允许在样品的外周产生自由基的RF功率的第二RF电源。
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公开(公告)号：US20110253672A1
公开(公告)日：2011-10-20
申请号：US12855206
申请日：2010-08-12
IPC分类号： C23F1/12 , H01L21/306 , C23F1/08
CPC分类号： H01J37/32678 , H01J37/32091 , H01L21/32136
摘要： The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio.
摘要翻译： 本发明旨在提高晶片表面内的入射离子能的分布函数的均匀性，并且在晶片表面内实现均匀的等离子体处理（蚀刻等）。 在等离子体处理装置中，放置晶片的放置电极的偏置施加部分在晶片的中心和边缘附近的位置被分成内电极和外电极。 用于加速入射在晶片上的离子的第一偏置功率和第二偏置功率分别被分叉，并且通过调节功率比，使用功率分配器将所得到的偏置功率馈送到内部电极和外部电极。
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公开(公告)号：US20110253313A1
公开(公告)日：2011-10-20
申请号：US12855163
申请日：2010-08-12
申请人： Keizo SUZUKI , Ken Takei , Takehito Usui , Masami Kamibayashi , Nobuyuki Negishi
发明人： Keizo SUZUKI , Ken Takei , Takehito Usui , Masami Kamibayashi , Nobuyuki Negishi
IPC分类号： H01L21/465
CPC分类号： H01J37/32532 , H01J37/3255 , H01J37/32577
摘要： The present invention provides a plasma processing apparatus in which a plasma distribution, a plasma potential, an etching characteristic or a surface processing characteristic varies in time and spatially, and controllability and reliability are high. In the plasma processing apparatus, at least part of a discharge forming electromagnetic wave is introduced into a processing chamber through a transmission electrode. The transmission electrode is provided with a transmission electrode layer as at least part of constituent elements therefor. Slender-shaped slot opening areas are densely formed in the transmission electrode layer. The transmission electrode behaves like a material having electrical conductivity for an RF bias electromagnetic wave or ion plasma vibrations, thereby implementing high stability and high reliability of plasma characteristics and plasma processing characteristics.
摘要翻译： 本发明提供了等离子体分布，等离子体电位，蚀刻特性或表面处理特性在时间和空间上变化的等离子体处理装置，并且可控性和可靠性高。 在等离子体处理装置中，放电形成电磁波的至少一部分通过透射电极被引入处理室。 传输电极具有作为其组成元件的至少一部分的透射电极层。 在传输电极层中密集地形成细长形状的开口区域。 透射电极表现为具有用于RF偏置电磁波或离子等离子体振动的导电性的材料，从而实现了等离子体特性和等离子体处理特性的高稳定性和高可靠性。
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