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公开(公告)号：US20130087285A1
公开(公告)日：2013-04-11
申请号：US13592129
申请日：2012-08-22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3211 , H01J37/32192 , H01J37/32302 , H01J37/32449 , H01J2237/006 , H01J2237/3341
摘要： A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.
摘要翻译： 无电极系统的等离子体蚀刻装置可以使自由基密度均匀化，并提高蚀刻的均匀性。 无电极系统的等离子体蚀刻装置包括减压室，气体供给机构，电介质窗，等离子体产生单元，放置样品的台和连接到载物台的第一RF电源。 等离子体蚀刻装置还包括用于供应第二气体的气体引入机构和用于输入允许在样品的外周产生自由基的RF功率的第二RF电源。
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2.发明授权公开(公告)号：US06551445B1
公开(公告)日：2003-04-22
申请号：US09665045
申请日：2000-09-19
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32678
摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要翻译： 平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。 在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由 来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。 该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。 因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。
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公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译： 可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。 当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。 循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。
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公开(公告)号：US20110253313A1
公开(公告)日：2011-10-20
申请号：US12855163
申请日：2010-08-12
申请人： Keizo SUZUKI , Ken Takei , Takehito Usui , Masami Kamibayashi , Nobuyuki Negishi
发明人： Keizo SUZUKI , Ken Takei , Takehito Usui , Masami Kamibayashi , Nobuyuki Negishi
IPC分类号： H01L21/465
CPC分类号： H01J37/32532 , H01J37/3255 , H01J37/32577
摘要： The present invention provides a plasma processing apparatus in which a plasma distribution, a plasma potential, an etching characteristic or a surface processing characteristic varies in time and spatially, and controllability and reliability are high. In the plasma processing apparatus, at least part of a discharge forming electromagnetic wave is introduced into a processing chamber through a transmission electrode. The transmission electrode is provided with a transmission electrode layer as at least part of constituent elements therefor. Slender-shaped slot opening areas are densely formed in the transmission electrode layer. The transmission electrode behaves like a material having electrical conductivity for an RF bias electromagnetic wave or ion plasma vibrations, thereby implementing high stability and high reliability of plasma characteristics and plasma processing characteristics.
摘要翻译： 本发明提供了等离子体分布，等离子体电位，蚀刻特性或表面处理特性在时间和空间上变化的等离子体处理装置，并且可控性和可靠性高。 在等离子体处理装置中，放电形成电磁波的至少一部分通过透射电极被引入处理室。 传输电极具有作为其组成元件的至少一部分的透射电极层。 在传输电极层中密集地形成细长形状的开口区域。 透射电极表现为具有用于RF偏置电磁波或离子等离子体振动的导电性的材料，从而实现了等离子体特性和等离子体处理特性的高稳定性和高可靠性。
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公开(公告)号：US20100297849A1
公开(公告)日：2010-11-25
申请号：US12512084
申请日：2009-07-30
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01L21/31144
摘要： The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.
摘要翻译： 本发明提供一种能够抑制待蚀刻物体的开口弯曲的等离子体蚀刻方法，并且解决了在具有高纵横比的深孔加工中在高纵横比部分缺少开口。 在等离子体蚀刻装置中使用图案化并形成在待蚀刻对象上的掩模来蚀刻待蚀刻物体的等离子体蚀刻方法包括：顺序地执行用于蚀刻掩模的第一步骤，同时将沉积物附着在靠近 使用碳氟化合物气体CxFy（x = 1,2,3,4,5,6，y = 4,5,6,8）的掩模的掩模图案的表面，以及蚀刻被蚀刻物体的第二步骤 同时使用碳氟化合物气体除去附着在开口的侧壁附近的沉积物的掩模图案的表面附近的沉积物。
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公开(公告)号：US06842658B2
公开(公告)日：2005-01-11
申请号：US09791666
申请日：2001-02-26
申请人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
发明人： Masaru Izawa , Masahito Mori , Nobuyuki Negishi , Shinichi Tachi
IPC分类号： H01L21/302 , G05B19/418 , H01L21/00 , H01L21/02 , H01L21/3065 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31288 , G05B2219/32053 , G05B2219/32198 , G05B2219/45031 , H01L21/67276 , Y02P90/14 , Y02P90/18 , Y02P90/20 , Y02P90/22 , Y02P90/26 , Y02P90/86
摘要： Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.
摘要翻译： 将通过使用半导体器件制造设备中配备的计算机的数据库和过程建模，通过使用包括厚度和质量的晶片处理历史的输入来提供自动生成处理条件。 配备在半导体器件制造设备中的计算机从生产线管理计算机获得晶片处理和检查结果，以帮助输入过程历史。 制造设备中的计算机可以连接到通信网络上制造设备制造商中的计算机，以自动提供过程条件和维护计划。
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公开(公告)号：US08747763B2
公开(公告)日：2014-06-10
申请号：US13441026
申请日：2012-04-06
IPC分类号： B01J19/08
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
摘要翻译： 为了提供具有高等离子体产生效率的等离子体灭菌装置，该装置包括第一和第二电极（3,2），第一介电体层（1）和绝缘间隔物（6）。 第一电介质体层（1）设置在第一和第二电极（3,2）之间。 绝缘间隔物（6）设置在第一电极（3）和第一介电体层（1）之间。 绝缘间隔物（6）的介电常数比第一绝缘体层（1）的介电常数低。
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公开(公告)号：US07585776B2
公开(公告)日：2009-09-08
申请号：US11668057
申请日：2007-01-29
IPC分类号： H01L21/302
CPC分类号： H01L21/76816 , H01L21/31116 , H01L21/31144 , H01L28/40
摘要： It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being possibly deteriorated as a result of excessive polymer deposition in the initial etching stage. The insulating film dry etching method is for treating a work on which a mask of elliptic pattern is formed with a fluorocarbon gas, wherein the etching process is divided into a first and second steps after the etching is started, the first step operating to deposit a polymer at a rate set lower than that in the second step, and controlling step time in accordance with ellipticity (long diameter/short diameter ratio) of the elliptic pattern.
摘要翻译： 本发明的目的是提供一种用于形成椭圆形深孔的高精度方法，其可以改善短径侧的孔方向性，由于在初始蚀刻阶段中聚合物沉积过多，孔方向性可能劣化。 绝缘膜干式蚀刻方法是用碳氟化合物气体处理形成有椭圆图案掩模的工件，其中蚀刻工序在蚀刻开始后分为第一步骤和第二步骤，第一步操作以沉积 聚合物，其速度设定为低于第二步骤，并且根据椭圆图案的椭圆率（长径/短径比）控制步骤时间。
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公开(公告)号：US06645870B2
公开(公告)日：2003-11-11
申请号：US09928500
申请日：2001-08-14
申请人： Nobuyuki Negishi , Masaru Izawa
发明人： Nobuyuki Negishi , Masaru Izawa
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76897 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.
摘要翻译： 公开了一种半导体器件的制造方法，其有效地抑制形成在基底硅基板或互连层上的损伤层，并且在形成接触孔时去除高电阻率层，从而降低接触电阻。 在蚀刻深度进行时，以减少离子能量和氧气流量的蚀刻工序形成接触孔，由此抑制形成在基材上的损伤层。 通过使用氢或含氢气体等离子体去除高电阻率层的步骤来实现接触电阻的降低。
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公开(公告)号：US20120263628A1
公开(公告)日：2012-10-18
申请号：US13441026
申请日：2012-04-06
IPC分类号： A61L9/015
CPC分类号： A61L2/14 , H05H1/2406 , H05H2001/2425
摘要： In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
摘要翻译： 为了提供具有高等离子体产生效率的等离子体灭菌装置，该装置包括第一和第二电极（3,2），第一介电体层（1）和绝缘间隔物（6）。 第一介电体层（1）设置在第一和第二电极（3,2）之间。 绝缘间隔物（6）设置在第一电极（3）和第一介电体层（1）之间。 绝缘间隔物（6）的介电常数比第一绝缘体层（1）的介电常数低。
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