公开(公告)号：US20170062711A1

公开(公告)日：2017-03-02

申请号：US15349074

申请日：2016-11-11

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yuta Saito ,  Junji Tominaga ,  Reiko Kondo

IPC: H01L45/00 ,  C23C14/34

CPC classification number: H01L45/06 ,  C23C14/34 ,  C30B23/025 ,  C30B29/46 ,  C30B29/68 ,  G11C11/161 ,  H01L27/105 ,  H01L29/82 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625

Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation

Abstract translation: 提供能够广泛选择用于基底基板和电极基板的材料的晶体取向层层叠结构，使用晶体取向层叠结构的电子存储器以及晶体取向层层叠结构的制造方法。 根据本发明的晶体取向层层叠结构具有包括基板的特征，该基板包括层叠在基板上的取向控制层，该取向控制层由锗，硅，钨，锗 - 硅，锗 - 钨和硅 - 钨，并且其厚度为至少1nm以上，并且包括层叠在取向控制层上的由SbTe，Sb2Te3，BiTe，Bi2Te3，BiSe和Bi2Se3中的任一种制成的第一晶体取向层 作为主要成分，其取向为一定的晶体取向

公开(公告)号：US10090460B2

公开(公告)日：2018-10-02

申请号：US15349074

申请日：2016-11-11

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yuta Saito ,  Junji Tominaga ,  Reiko Kondo

IPC: H01L29/49 ,  H01L45/00 ,  H01L27/105 ,  H01L29/82 ,  C23C14/34 ,  C30B23/02 ,  C30B29/46 ,  C30B29/68 ,  G11C11/16

Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation.