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    Process for purifying semiconducting single-walled carbon nanotubes
    1.
    发明授权
    Process for purifying semiconducting single-walled carbon nanotubes 有权

    公开(公告)号：US10046970B2

    公开(公告)日：2018-08-14

    申请号：US14912645

    申请日：2014-08-18

    Applicant: National Research Council of Canada

    Inventor： Jianfu Ding ,  Patrick Malenfant ,  Zhao Li ,  Jacques Lefebvre ,  Fuyong Cheng ,  Benoit Simard

    IPC: B01D11/02 ,  B01D21/26 ,  C01B32/16 ,  C01B32/17 ,  C01B31/02 ,  B82Y30/00 ,  C01B32/174 ,  C01B32/159 ,  C01B32/172 ,  C01B32/166 ,  B82Y40/00

    Abstract: A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).

    PROCESS FOR PURIFYING SEMICONDUCTING SINGLE-WALLED CARBON NANOTUBES
    3.
    发明申请
    PROCESS FOR PURIFYING SEMICONDUCTING SINGLE-WALLED CARBON NANOTUBES 审中-公开
    净化半导体碳纳米管的工艺

    公开(公告)号：US20160200578A1

    公开(公告)日：2016-07-14

    申请号：US14912645

    申请日：2014-08-18

    Applicant: NATIONAL RESEARCH COUNCIL OF CANADA

    Inventor： Jianfu Ding ,  Patrick Malenfant ,  Zhao Li ,  Jacques Lefebvre ,  Fuyong Cheng ,  Benoit Simard

    IPC: C01B31/02

    CPC classification number: C01B32/166 ,  B01D11/0257 ,  B01D11/0265 ,  B01D11/0288 ,  B01D21/262 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/159 ,  C01B32/172 ,  C01B32/174

    Abstract: A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).

    Abstract translation: 两步sc-SWCNT富集方法包括基于使用共轭聚合物选择性分散和提取半导体SWCNT的第一步骤，然后基于吸附方法的第二步骤，其中第一步骤的产物暴露于无机 吸收介质以选择性地结合主要金属SWCNT，使得在溶液中分散的物质进一步富集在半导体SWCNT中。 该方法可以容易地扩展到大直径半导体单壁碳纳米管（sc-SWCNT）富集，其平均直径在例如约0.6至2.2nm的范围内。 第一步以高产率或高纯度（99％及以上）以低产率产生具有缓和sc-纯度（98％）的富集的sc-SWCNT分散体。 第二步不仅可以提高中等纯度的富集聚合物的sc-SWCNT的纯度，还可以进一步促进高纯度样品达到超纯水平。 因此，这种两步混合工艺提供具有超高纯度的sc-SWCNT材料，以及高sc纯度（例如大于99％）和高产率（高达约20％或更高）两者。

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