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1.发明授权公开(公告)号：US11993719B2
公开(公告)日：2024-05-28
申请号：US16759227
申请日：2018-10-26
Applicant: NATIONAL RESEARCH COUNCIL OF CANADA
Inventor： Chantal Paquet , Jacques Lefebvre , Jingwen Guan , Patrick Roland Lucien Malenfant , Benoit Simard , Yadienka Martinez-Rubi , Arnold Kell , Xiangyang Liu
IPC: C09C3/10 , B41M3/00 , B41M7/00 , C09D11/037 , C09D11/322 , C09D11/52 , H05K1/03 , H05K1/09 , H05K3/12
CPC classification number: C09C3/10 , B41M3/006 , B41M7/0081 , C09D11/037 , C09D11/322 , C09D11/52 , H05K1/0353 , H05K1/097 , H05K3/1283 , C01P2004/13 , H05K2201/0145 , H05K2201/0154 , H05K2201/0158 , H05K2201/0257 , H05K2201/026 , H05K2203/1131
Abstract: A composite includes a plastic substrate and an electrical insulator layer formed on the plastic substrate. The electrical insulator layer contains boron nitride nanotubes (BNNTs), which may be unmodified or modified BNNTS. The composite is suitable for use in making printed electronic devices. A process includes providing a plastic substrate and forming on at least a portion of a surface of the plastic substrate a layer that contains the BNNTs. A metallic ink trace is formed on a portion of the layer, such that the metallic ink trace is spaced-apart from the substrate. Using photonic or thermal sintering techniques, the metallic ink trace is then sintered.
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公开(公告)号：US09620728B2
公开(公告)日：2017-04-11
申请号：US14609806
申请日：2015-01-30
Applicant: National Research Council of Canada
Inventor： Naiying Du , Patrick Malenfant , Zhao Li , Jacques Lefebvre , Girjesh Dubey , Gregory Lopinski , Shan Zou
CPC classification number: H01L51/0558 , H01L51/0035 , H01L51/0039 , H01L51/0048 , H01L51/0516 , H01L51/052 , H01L51/0529
Abstract: A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.
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公开(公告)号：US11906459B2
公开(公告)日：2024-02-20
申请号：US17292844
申请日：2019-08-16
Applicant: National Research Council of Canada
Inventor： Jacques Lefebvre , François Lapointe
IPC: G01N27/22 , G01N27/12 , G01N27/414
CPC classification number: G01N27/225 , G01N27/121 , G01N27/4141 , G01N27/4146
Abstract: An electronic device for sensing a target analyte in a gas, liquid or vapor sample, the device has at least two sensing elements, each sensing element having an exposed layer of a transduction material supported on a dielectric substrate. The dielectric substrate of at least one of the sensing elements is made of a different dielectric material than the dielectric substrate of at least one other of the sensing elements. The different dielectric materials providing a different sensing response according to one or more transduction modes. The plurality of sensing elements in the device yield a specific transduction pattern for a specific target analyte in a gas, liquid or vapor sample.
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Patent Agency Ranking
公开(公告)号：US11815462B2
公开(公告)日：2023-11-14
申请号：US17614396
申请日：2020-06-18
Applicant: National Research Council of Canada
Inventor： Paul Finnie , Jacques Lefebvre
CPC classification number: G01N21/65 , G01N2201/0633
Abstract: Devices and methods to perform Raman spectroscopy with a structured excitation profile to obtain a Raman excitation map. A device includes a broadband light source to emit a broadband light beam and excitation optics to disperse the broadband light beam to strike a sample as incident light according to a structured excitation profile. The device further includes analysis optics to collect scattered light scattered by the incident light striking the sample, block Rayleigh scatter from the collected scattered light in a manner complementary to the structured excitation profile, and direct Raman scatter from the collected scattered light to a sensor to generate a signal to form a Raman excitation map.
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公开(公告)号：US12114515B2
公开(公告)日：2024-10-08
申请号：US17312678
申请日：2019-12-17
Applicant: National Research Council of Canada
Inventor： Jacques Lefebvre , Francois Lapointe , Zhao Li , Jianfu Ding , Patrick Roland Lucien Malenfant
CPC classification number: H10K10/484 , H10K71/12 , H10K85/221
Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.
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公开(公告)号：US20220069243A1
公开(公告)日：2022-03-03
申请号：US17312678
申请日：2019-12-17
Applicant: National Research Council of Canada
Inventor： Jacques Lefebvre , Francois Lapointe , Zhao Li , Jianfu Ding , Patrick Roland Lucien Malenfant
Abstract: The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.
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公开(公告)号：US10046970B2
公开(公告)日：2018-08-14
申请号：US14912645
申请日：2014-08-18
Applicant: National Research Council of Canada
Inventor： Jianfu Ding , Patrick Malenfant , Zhao Li , Jacques Lefebvre , Fuyong Cheng , Benoit Simard
IPC: B01D11/02 , B01D21/26 , C01B32/16 , C01B32/17 , C01B31/02 , B82Y30/00 , C01B32/174 , C01B32/159 , C01B32/172 , C01B32/166 , B82Y40/00
Abstract: A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).
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公开(公告)号：US20160200578A1
公开(公告)日：2016-07-14
申请号：US14912645
申请日：2014-08-18
Applicant: NATIONAL RESEARCH COUNCIL OF CANADA
Inventor： Jianfu Ding , Patrick Malenfant , Zhao Li , Jacques Lefebvre , Fuyong Cheng , Benoit Simard
IPC: C01B31/02
CPC classification number: C01B32/166 , B01D11/0257 , B01D11/0265 , B01D11/0288 , B01D21/262 , B82Y30/00 , B82Y40/00 , C01B32/159 , C01B32/172 , C01B32/174
Abstract: A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).
Abstract translation: 两步sc-SWCNT富集方法包括基于使用共轭聚合物选择性分散和提取半导体SWCNT的第一步骤，然后基于吸附方法的第二步骤，其中第一步骤的产物暴露于无机 吸收介质以选择性地结合主要金属SWCNT，使得在溶液中分散的物质进一步富集在半导体SWCNT中。 该方法可以容易地扩展到大直径半导体单壁碳纳米管（sc-SWCNT）富集，其平均直径在例如约0.6至2.2nm的范围内。 第一步以高产率或高纯度（99％及以上）以低产率产生具有缓和sc-纯度（98％）的富集的sc-SWCNT分散体。 第二步不仅可以提高中等纯度的富集聚合物的sc-SWCNT的纯度，还可以进一步促进高纯度样品达到超纯水平。 因此，这种两步混合工艺提供具有超高纯度的sc-SWCNT材料，以及高sc纯度（例如大于99％）和高产率（高达约20％或更高）两者。
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