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    INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL
    2.
    发明申请
    INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL 有权
    具有两个金属层和HOMOJUNCTION顶层电池的反相多晶多晶太阳能电池

    公开(公告)号：US20120211068A1

    公开(公告)日：2012-08-23

    申请号：US13401181

    申请日：2012-02-21

    申请人： Arthur Cornfeld ,  John Spann ,  Pravin Patel ,  Mark A. Stan ,  Benjamin Cho ,  Paul R. Sharps ,  Daniel J. Aiken

    发明人： Arthur Cornfeld ,  John Spann ,  Pravin Patel ,  Mark A. Stan ,  Benjamin Cho ,  Paul R. Sharps ,  Daniel J. Aiken

    IPC分类号： H01L31/0248 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/04

    CPC分类号： H01L31/06875 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

    摘要： A multijunction solar cell including an upper first solar subcell, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell; a third solar subcell adjacent to said second solar subcell. A first graded interlayer is provided adjacent to said third solar subcell. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell is lattice mismatched with respect to said fourth subcell.

    摘要翻译： 一种多结太阳能电池，其包括上部第一太阳能子电池，并且所述上部第一太阳能子电池的基极 - 发射极结为同质结; 与所述第一太阳能子电池相邻的第二太阳能子电池; 与所述第二太阳能子电池相邻的第三太阳能子电池。 与所述第三太阳能子电池相邻地设置有第一梯度中间层。 与所述第一梯度中间层相邻地设置第四太阳能子电池，所述第四子电池相对于所述第三子电池晶格失配。 邻近所述第四太阳能子电池设置第二梯度中间层; 并且与所述第二梯度中间层相邻地设置较低的第五太阳能子电池，所述下部第五子电池相对于所述第四子电池晶格失配。

    Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
    3.
    发明授权
    Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell 有权
    具有高带隙异质结中间电池的多结太阳能电池结构的方法和装置

    公开(公告)号：US07553691B2

    公开(公告)日：2009-06-30

    申请号：US11114454

    申请日：2005-04-26

    申请人： Navid Fatemi ,  Daniel J. Aiken ,  Mark A. Stan

    发明人： Navid Fatemi ,  Daniel J. Aiken ,  Mark A. Stan

    IPC分类号： H01L21/00 ,  H01L25/00

    CPC分类号： H01L31/03046 ,  H01L31/032 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/078 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer layer, wherein the buffer layer is disposed over the Ge substrate. The middle cell contains a heterojunction structure, which further includes an emitter layer and a base layer that are disposed over the bottom cell. The top cell contains an emitter layer and a base layer disposed over the middle cell.

    摘要翻译： 公开了一种具有高带隙异质结中间太阳能电池的方法和多结太阳能装置。 在一个实施例中，三结太阳能装置包括底部，中部和顶部单元。 底部单元具有锗（Ge）衬底和缓冲层，其中缓冲层设置在Ge衬底上。 中间单元包含异质结结构，其还包括布置在底部单元上方的发射极层和基极层。 顶部单元包含放置在中间单元上方的发射极层和基极层。

    Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode
    5.
    发明授权
    Method of forming a multijunction solar cell structure with a GaAs/AIGaAs tunnel diode 有权
    用GaAs / AIGAAs隧道二极管形成多结太阳能电池结构的方法

    公开(公告)号：US07709287B2

    公开(公告)日：2010-05-04

    申请号：US11401720

    申请日：2006-04-10

    申请人： Navid Fatemi ,  Daniel J. Aiken ,  Mark A. Stan

    发明人： Navid Fatemi ,  Daniel J. Aiken ,  Mark A. Stan

    IPC分类号： H01L21/00 ,  H01L31/00 ,  H01L31/04

    CPC分类号： H01L31/03046 ,  H01L31/032 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/078 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of forming a multijunction solar cell includes providing a substrate, forming a first subcell by depositing a nucleation layer over the substrate and a buffer layer including gallium arsenide (GaAs) over the nucleation layer, forming a middle second subcell having a heterojunction base and emitter disposed over the first subcell and forming first and second tunnel junction layers between the first and second subcells. The first tunnel junction layer includes GaAs over the first subcell and the second tunnel junction layer includes aluminum gallium arsenide (AlGaAs) over the first tunnel junction layer. The method further includes forming a third subcell having a homojunction base and emitter disposed over the middle subcell.

    摘要翻译： 一种形成多结太阳能电池的方法包括提供衬底，通过在衬底上沉积成核层形成第一子电池，以及在成核层上形成包含砷化镓（GaAs）的缓冲层，形成具有异质结基底的中间第二子电池，以及 发射器设置在第一子电池上方，并在第一和第二子电池之间形成第一和第二隧道结层。 第一隧道结层在第一子电池上包括GaAs，第二隧道结层包括在第一隧道结层上的砷化镓铝（AlGaAs）。 该方法还包括形成具有均匀结合基极和设置在中间子电池上的发射极的第三子电池。

    High concentration terrestrial solar array with III-V compound semiconductor cell
    8.
    发明申请
    High concentration terrestrial solar array with III-V compound semiconductor cell 审中-公开
    具有III-V化合物半导体电池的高浓度地面太阳能阵列

    公开(公告)号：US20090188561A1

    公开(公告)日：2009-07-30

    申请号：US12148553

    申请日：2008-04-18

    申请人： Daniel J. Aiken ,  Mark A. Stan ,  Fred Newman

    发明人： Daniel J. Aiken ,  Mark A. Stan ,  Fred Newman

    IPC分类号： H01L31/0232 ,  H01L31/0264

    CPC分类号： H01L31/1852 ,  H01L31/022425 ,  H01L31/03042 ,  H01L31/0687 ,  H01L31/0693 ,  Y02E10/52 ,  Y02E10/544

    摘要： An arrangement including a concentrator lens and a photovoltaic solar cell for terrestrial use for generating electrical power from solar radiation including a multifunction III-V compound semiconductor solar cell with material composition and bandgaps to maximize absorption in the AM1.5 spectral region, and a thickness of one micron or greater so as to be able to produce in excess of 15 watts of DC power with conversion efficiency in excess of 37%. The concentration level of the lens is selected to optimize the efficiency of the solar cell.

    摘要翻译： 一种包括集中器透镜和用于从太阳辐射产生电力的光电太阳能电池的装置，包括具有材料成分和带隙的多功能III-V化合物半导体太阳能电池，以最大化AM1.5光谱区域中的吸收，以及厚度 以便能够产生超过15瓦的直流电力，转换效率超过37％。 选择透镜的浓度水平以优化太阳能电池的效率。

    Apparatus and method for integral bypass diode in solar cells
    9.
    发明授权
    Apparatus and method for integral bypass diode in solar cells 有权
    太阳能电池中整体旁路二极管的装置和方法

    公开(公告)号：US06864414B2

    公开(公告)日：2005-03-08

    申请号：US10280593

    申请日：2002-10-24

    申请人： Paul R. Sharps ,  Daniel J. Aiken ,  Doug Collins ,  Mark A. Stan

    发明人： Paul R. Sharps ,  Daniel J. Aiken ,  Doug Collins ,  Mark A. Stan

    IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/00 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/075

    CPC分类号： H01L31/1852 ,  H01L27/1421 ,  H01L31/00 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S136/293

    摘要： A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multifunction solar cell structure includes a substrate, a bottom cell, a middle cell, a top cell, a bypass diode, a lateral conduction layer, and a shunt. The lateral conduction layer is deposited over the top cell. The bypass diode is deposited over the lateral conduction layer. One side of the shunt is connected to the substrate and another side of the shunt is connected to the lateral conduction layer. In another embodiment, the bypass diode contains an i-layer to enhance the diode performance.

    摘要翻译： 公开了具有带旁路二极管的多结太阳能电池结构的太阳能电池。 旁路二极管为多结太阳能电池结构提供反向偏置保护。 在一个实施例中，多功能太阳能电池结构包括衬底，底部电池，中间电池，顶部电池，旁路二极管，横向导电层和分流器。 横向导电层沉积在顶部电池上。 旁路二极管沉积在横向导电层上。 分流器的一侧连接到基板，并且分流器的另一侧连接到横向导电层。 在另一个实施例中，旁路二极管包含i层以增强二极管性能。

    Inverted metamorphic multijunction solar cells
    10.
    发明授权
    Inverted metamorphic multijunction solar cells 有权
    倒置变质多结太阳能电池

    公开(公告)号：US08536445B2

    公开(公告)日：2013-09-17

    申请号：US11445793

    申请日：2006-06-02

    申请人： Arthur Cornfeld ,  Mark A. Stan

    发明人： Arthur Cornfeld ,  Mark A. Stan

    IPC分类号： H01L31/00

    CPC分类号： H01L31/06 ,  H01L31/03046 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1844 ,  Y02E10/544

    摘要： A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second subcell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell.

    摘要翻译： 一种形成包括上部子电池，中间子电池和下部子电池的多结太阳能电池的方法，包括提供用于半导体材料的外延生长的第一衬底; 在所述基板上形成具有第一带隙的第一太阳能子电池; 在所述第一子电池上形成具有小于所述第一带隙的第二带隙的第二太阳能子电池; 以及在所述第二子电池上形成具有大于所述第二带隙的第三带隙的分级中间层，形成具有小于所述第二带隙的第四带隙的第三太阳能子电池，使得所述第三子电池相对于所述第二子电池晶格失配 。