公开(公告)号：US07571697B2

公开(公告)日：2009-08-11

申请号：US10242795

申请日：2002-09-13

Applicant: Neil Benjamin ,  David Cooperberg

Inventor： Neil Benjamin ,  David Cooperberg

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

Abstract translation: 等离子体处理器线圈可以包括欧姆地或仅反应地耦合到多个多匝，共面，交错的螺旋，并联的绕组的短路匝。 单独的电容器可以与每个绕组相关联以将电流从该绕组的一部分分流到绕组的另一部分。 每个绕组的周边部分的相邻匝之间的间隔可以不同于每个绕组的内部部分的相邻匝间的间隔。 线圈可以具有相对于线圈的RF激励波长短的长度。

公开(公告)号：US06344105B1

公开(公告)日：2002-02-05

申请号：US09345639

申请日：1999-06-30

Applicant: John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

Inventor： John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

IPC: H01L2100

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68721 ,  H01L21/68735 ,  Y10S156/915

Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Abstract translation: 公开了用于等离子体处理系统中的离子辅助蚀刻处理的改进方法和装置。 根据本发明的各个方面，公开了一种高边缘环，带槽边缘环和RF耦合边缘环。 本发明用于提高衬底（晶片）上的蚀刻速率均匀性。 本发明提供的蚀刻率均匀性改进不仅提高了制造成本，而且成本有效，并且不会对颗粒和/或重金属污染造成危害。

公开(公告)号：US20070293043A1

公开(公告)日：2007-12-20

申请号：US11455671

申请日：2006-06-20

Applicant: Harmeet Singh ,  David Cooperberg ,  Vahid Vahedi

Inventor： Harmeet Singh ,  David Cooperberg ,  Vahid Vahedi

IPC: C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/6708 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.

Abstract translation: 蚀刻具有改善的临界尺寸均匀性的半导体衬底的方法包括在电感耦合等离子体蚀刻室中的衬底支撑件上支撑半导体衬底; 向所述半导体衬底上的中心区域提供第一蚀刻气体; 将包含至少一种含硅气体的第二气体供应到围绕所述中心区域的所述半导体衬底上的周边区域，其中所述第二气体中的硅浓度大于所述第一蚀刻气体中的硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并且等离子体蚀刻半导体衬底的暴露表面。

公开(公告)号：US20060219361A1

公开(公告)日：2006-10-05

申请号：US11096820

申请日：2005-04-01

Applicant: Ing-Yann Wang ,  Jaroslaw Winniczek ,  David Cooperberg ,  Erik Edelberg ,  Robert Chebi

Inventor： Ing-Yann Wang ,  Jaroslaw Winniczek ,  David Cooperberg ,  Erik Edelberg ,  Robert Chebi

IPC: H01L21/306 ,  C03C25/68

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/85938

Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

公开(公告)号：US06577915B1

公开(公告)日：2003-06-10

申请号：US09608163

申请日：2000-06-30

Applicant: David Cooperberg ,  Vahid Vahedi

Inventor： David Cooperberg ,  Vahid Vahedi

IPC: G05B1302

CPC classification number: H01J37/32935

Abstract: A method and an apparatus for a semi-empirical process simulation using a calibrated profile simulator to create a reactor model which can predict neutral and ion flux distributions on a substrate as a function of the reactor settings include providing a set of conditions characterized by unique reactor settings. Wafers are processed under each condition. Etch or deposition rates and surface profiles are measured and used in the calibrated profile simulator to derive the flux distributions. The flux distributions data generated by the processes are then used to create a reactor model.

Abstract translation: 用于使用校准轮廓模拟器创建反应器模型的半经验过程模拟的方法和装置，其可以预测作为反应器设置的函数的衬底上的中性和离子通量分布，包括提供一组由独特的反应器 设置。 在各种条件下处理晶片。 测量蚀刻或沉积速率和表面轮廓，并在校准轮廓模拟器中使用蚀刻或沉积速率和表面轮廓以导出通量分布。 然后使用由该方法产生的通量分布数据来产生反应器模型。

公开(公告)号：US07932181B2

公开(公告)日：2011-04-26

申请号：US11455671

申请日：2006-06-20

Applicant: Harmeet Singh ,  David Cooperberg ,  Vahid Vahedi

Inventor： Harmeet Singh ,  David Cooperberg ,  Vahid Vahedi

IPC: C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/6708 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.

Abstract translation: 蚀刻具有改善的临界尺寸均匀性的半导体衬底的方法包括在电感耦合等离子体蚀刻室中的衬底支撑件上支撑半导体衬底; 向所述半导体衬底上的中心区域提供第一蚀刻气体; 将包含至少一种含硅气体的第二气体供应到围绕所述中心区域的所述半导体衬底上的周边区域，其中所述第二气体中的硅浓度大于所述第一蚀刻气体中的硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并且等离子体蚀刻半导体衬底的暴露表面。

公开(公告)号：US07139632B2

公开(公告)日：2006-11-21

申请号：US10932926

申请日：2004-09-01

Applicant: David Cooperberg ,  Vahid Vahedi

Inventor： David Cooperberg ,  Vahid Vahedi

IPC: G06F19/00

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01J37/32174

Abstract: A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

Abstract translation: 用于增强过程和轮廓模拟器算法的方法预测给定等离子体过程将产生的表面轮廓。 首先跟踪一个精力充沛的粒子。 然后记录由能量粒子产生的离子通量。 局部蚀刻速率和局部沉积速率由同时求解的中性焊剂，表面化学覆盖度和表面材料类型计算。

公开(公告)号：USRE39534E1

公开(公告)日：2007-03-27

申请号：US10302567

申请日：2002-11-22

Applicant: David Cooperberg ,  Richard A. Gottscho ,  Vahid Vahedi

Inventor： David Cooperberg ,  Richard A. Gottscho ,  Vahid Vahedi

IPC: G05B13/02

Abstract: A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters. A set Sets of test conditions processes is are derived for which the profile evolution is governed by only a limited number of parameters. For each set of test conditions process, model test values are selected and a test substrate is substrates are actually subjected to a the test process processes defined by the test values , thereby creating a test surface profile profiles. The test values are used to generate an approximate profile prediction predictions and are adjusted to minimize the discrepancy between the test surface profile profiles and the approximate profile prediction predictions, thereby providing a final model of the profile evolution in terms of the process values.

Abstract translation: 用于校准用于确定等离子体工艺中的工艺值以用于在工艺衬底上创建所需表面轮廓的半经验过程模拟器的方法和装置包括提供测试模型，该测试模型根据一组 未知表面参数。 一组集合的测试条件过程被导出，其中简档演化仅由有限数量的参数来管理。 对于每组测试条件过程，选择模型测试值，并且测试衬底实际上经受由测试值定义的测试过程过程，从而产生测试表面轮廓。 测试值用于生成近似轮廓预测预测，并进行调整，以最小化测试曲面轮廓轮廓和近似轮廓预测预测之间的差异，从而根据过程值提供轮廓演变的最终模型。

公开(公告)号：US20050278057A1

公开(公告)日：2005-12-15

申请号：US10932926

申请日：2004-09-01

Applicant: David Cooperberg ,  Vahid Vahedi

Inventor： David Cooperberg ,  Vahid Vahedi

IPC: G06F19/00 ,  H01J37/32

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01J37/32174

Abstract: A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

Abstract translation: 用于增强过程和轮廓模拟器算法的方法预测给定等离子体过程将产生的表面轮廓。 首先跟踪一个精力充沛的粒子。 然后记录由能量粒子产生的离子通量。 局部蚀刻速率和局部沉积速率由同时求解的中性焊剂，表面化学覆盖度和表面材料类型计算。

公开(公告)号：US06804572B1

公开(公告)日：2004-10-12

申请号：US09609593

申请日：2000-06-30

Applicant: David Cooperberg ,  Vahid Vahedi

Inventor： David Cooperberg ,  Vahid Vahedi

IPC: G05B1302

CPC classification number: H01J37/32935

Abstract: A method enhances a process and profile simulator algorithm to predict the surface profile that a given plasma process will create. The method first tracks an energetic particle and then records the ion fluxes produced by the energetic particle. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

Abstract translation: 一种方法增强了过程和轮廓模拟器算法来预测给定等离子体过程将产生的表面轮廓。 该方法首先跟踪能量粒子，然后记录由能量粒子产生的离子通量。 局部蚀刻速率和局部沉积速率由同时求解的中性焊剂，表面化学覆盖度和表面材料类型计算。