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    Semiconductor constructions, and methods of forming metal silicides
    1.
    发明申请
    Semiconductor constructions, and methods of forming metal silicides 审中-公开
    半导体结构和形成金属硅化物的方法

    公开(公告)号：US20060175664A1

    公开(公告)日：2006-08-10

    申请号：US11053475

    申请日：2005-02-07

    申请人： Nirmal Ramaswamy ,  Paul Castrovillo ,  Joel Drewes

    发明人： Nirmal Ramaswamy ,  Paul Castrovillo ,  Joel Drewes

    IPC分类号： H01L29/40 ,  H01L21/44

    CPC分类号： H01L21/76855 ,  H01L21/28568 ,  H01L21/76846 ,  H01L21/76867

    摘要： The invention includes methods of forming metal silicide. A layer consisting essentially of one or more metal nitrides is formed directly against a silicon-containing region. A layer comprising one or more metals is formed over the one or more metal nitrides. Silicon is transferred from the silicon-containing region, through the one or more metal nitrides, and to the one or more metals to convert at least some of the one or more metals into metal silicides. In particular aspects, titanium is formed over tantalum nitride, and the silicon is transferred into the titanium to convert the titanium into titanium silicide. The invention also includes semiconductor constructions having a layer consisting essentially of titanium silicide directly against a layer consisting essentially of tantalum nitride.

    摘要翻译： 本发明包括形成金属硅化物的方法。 基本上由一种或多种金属氮化物组成的层直接形成在含硅区域上。 在一种或多种金属氮化物上形成包含一种或多种金属的层。 硅通过一种或多种金属氮化物从含硅区域转移到一种或多种金属，以将至少一种一种或多种金属转化为金属硅化物。 在特定方面，在氮化钽上形成钛，并且将硅转移到钛中以将钛转化为硅化钛。 本发明还包括半导体结构，其具有基本上由硅化钛组成的层，直接与主要由氮化钽组成的层组成。

    Deposition apparatuses
    3.
    发明申请
    Deposition apparatuses 审中-公开
    沉积装置

    公开(公告)号：US20060231016A1

    公开(公告)日：2006-10-19

    申请号：US11471106

    申请日：2006-06-19

    申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

    发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： H01L21/67248 ,  C23C16/481 ,  C23C16/52 ,  C30B25/165 ,  C30B31/18

    摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

    摘要翻译： 本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。 在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。 本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游 混合 此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

    Method of forming a pseudo SOI substrate and semiconductor devices
    5.
    发明授权
    Method of forming a pseudo SOI substrate and semiconductor devices 有权
    形成伪SOI衬底和半导体器件的方法

    公开(公告)号：US07268023B2

    公开(公告)日：2007-09-11

    申请号：US11122362

    申请日：2005-05-05

    申请人： Nirmal Ramaswamy ,  Eric Blomiley ,  Joel Drewes

    发明人： Nirmal Ramaswamy ,  Eric Blomiley ,  Joel Drewes

    IPC分类号： H01L21/84

    CPC分类号： H01L21/84 ,  H01L21/76283 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66772

    摘要： The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a depth, forming a layer of insulating material within each of the plurality of trenches, the layer of insulating material having a thickness that is less than the depth of the trenches, and performing an anneal process on the substrate in a hydrogen environment to cause the silicon substrate material to merge above the layer of insulating material within the plurality of trenches to thereby define a pseudo SOI substrate.

    摘要翻译： 本发明一般涉及形成伪SOI衬底和半导体器件的方法。 在一个说明性实施例中，该方法包括在由硅组成的半导体衬底中形成多个沟槽，每个沟槽具有深度，在多个沟槽的每一个内形成绝缘材料层，该绝缘材料层具有 厚度小于沟槽的深度，并且在氢环境中对衬底进行退火处理，以使硅衬底材料在多个沟槽内的绝缘材料层上方合并，从而限定伪SOI衬底。

    Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material
    8.
    发明申请
    Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material 审中-公开
    沉积装置，沉积装置内的半导体晶片基板的温度的评估方法以及沉积外延半导体材料的方法

    公开(公告)号：US20050223985A1

    公开(公告)日：2005-10-13

    申请号：US10822208

    申请日：2004-04-08

    申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

    发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

    IPC分类号： C23C16/00 ,  C23C16/48 ,  C23C16/52 ,  C30B25/16 ,  C30B31/18 ,  H01L21/00 ,  H01L21/66

    CPC分类号： H01L21/67248 ,  C23C16/481 ,  C23C16/52 ,  C30B25/165 ,  C30B31/18

    摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

    摘要翻译： 本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。 在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。 本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游 混合 此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

    Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber
    9.
    发明申请
    Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber 审中-公开
    在半导体衬底上沉积元素含硅材料的方法和清洁室内壁的方法

    公开(公告)号：US20050217569A1

    公开(公告)日：2005-10-06

    申请号：US10816772

    申请日：2004-04-01

    申请人： Nirmal Ramaswamy ,  Eric Blomiley ,  Joel Drewes

    发明人： Nirmal Ramaswamy ,  Eric Blomiley ,  Joel Drewes

    IPC分类号： C23C16/44 ,  C23C16/48 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  G01J5/00 ,  G01J5/02 ,  H01L21/00

    CPC分类号： H01L21/67248 ,  C23C16/4405 ,  C23C16/481 ,  G01J5/0003 ,  H01L21/67115

    摘要： The invention includes methods of depositing elemental silicon-comprising materials over a semiconductor substrate, and methods of cleaning an internal wall of a chamber. In one implementation, a semiconductor substrate is positioned within a chamber for deposition. The chamber comprises an infrared radiation transparent wall. An elemental silicon-comprising material is deposited on the semiconductor substrate. During such depositing, a deposit is formed on the infrared radiation transparent wall within the chamber. After such depositing, a plasma is generated within the chamber with a cleaning gas from at least one plasma generating electrode received external of the chamber proximate the infrared radiation transparent wall effective to remove at least some of the deposit from the infrared radiation transparent wall within the chamber. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括在半导体衬底上沉积元素含硅材料的方法，以及清洁室内壁的方法。 在一个实施方案中，半导体衬底位于用于沉积的室内。 该室包括红外辐射透明壁。 元素含硅材料沉积在半导体衬底上。 在这样的沉积期间，在室内的红外辐射透明壁上形成沉积物。 在这种沉积之后，在室内产生等离子体，其中来自至少一个等离子体产生电极的清洁气体被接收在靠近红外辐射透明壁的腔室的外部，有效地从其内部的红外辐射透明壁去除至少一些沉积物 房间。 考虑了其他方面和实现。