公开(公告)号：US20130005143A1

公开(公告)日：2013-01-03

申请号：US13616080

申请日：2012-09-14

申请人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

IPC分类号： H01L21/28 ,  B82Y40/00

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

摘要翻译： 公开了半导体器件及其形成方法，其中至少两个相邻的导体在它们之间具有空隙绝缘体，其被绝缘材料的纳米颗粒覆盖，其尺寸是防止纳米颗粒基本上进入气隙的尺寸。

公开(公告)号：US20110201211A1

公开(公告)日：2011-08-18

申请号：US13096052

申请日：2011-04-28

申请人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

IPC分类号： H01L21/31 ,  B82Y40/00

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

摘要翻译： 公开了半导体器件及其形成方法，其中至少两个相邻的导体在它们之间具有空隙绝缘体，其被绝缘材料的纳米颗粒覆盖，其尺寸是防止纳米颗粒基本上进入气隙的尺寸。

公开(公告)号：US20100003782A1

公开(公告)日：2010-01-07

申请号：US12166604

申请日：2008-07-02

申请人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  Neil Greeley ,  Kunal Parekh

发明人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  Neil Greeley ,  Kunal Parekh

IPC分类号： H01L21/16

CPC分类号： H01L45/1683 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

摘要翻译： 形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。 含金属氧化物的材料形成在第一导电电极上。 蚀刻停止材料沉积在包含金属氧化物的材料上。 导电材料沉积在蚀刻停止材料上。 包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。 这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。 考虑其他实现。

公开(公告)号：US08298964B2

公开(公告)日：2012-10-30

申请号：US13096052

申请日：2011-04-28

申请人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

IPC分类号： H01L21/31

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

摘要翻译： 公开了半导体器件及其形成方法，其中至少两个相邻的导体在它们之间具有空隙绝缘体，其被绝缘材料的纳米颗粒覆盖，其尺寸是防止纳米颗粒基本上进入气隙的尺寸。

公开(公告)号：US08461060B2

公开(公告)日：2013-06-11

申请号：US13616080

申请日：2012-09-14

申请人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

IPC分类号： H01L21/31

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

摘要翻译： 公开了半导体器件及其形成方法，其中至少两个相邻的导体在它们之间具有空隙绝缘体，其被绝缘材料的纳米颗粒覆盖，其尺寸是防止纳米颗粒基本上进入气隙的尺寸。

公开(公告)号：US07952174B2

公开(公告)日：2011-05-31

申请号：US12473849

申请日：2009-05-28

申请人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

IPC分类号： H01L23/58

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

摘要翻译： 公开了半导体器件及其形成方法，其中至少两个相邻的导体在它们之间具有空隙绝缘体，其被绝缘材料的纳米颗粒覆盖，其尺寸是防止纳米颗粒基本上进入气隙的尺寸。

公开(公告)号：US20100301462A1

公开(公告)日：2010-12-02

申请号：US12473849

申请日：2009-05-28

申请人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej Sandhu ,  Neil Greeley ,  John Smythe

IPC分类号： H01L23/522 ,  H01L21/31

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

摘要翻译： 公开了半导体器件及其形成方法，其中至少两个相邻的导体在它们之间具有空隙绝缘体，其被绝缘材料的纳米颗粒覆盖，其尺寸是防止纳米颗粒基本上进入气隙的尺寸。

公开(公告)号：US08415661B2

公开(公告)日：2013-04-09

申请号：US13491165

申请日：2012-06-07

申请人： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

发明人： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

IPC分类号： H01L29/06

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

摘要： Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

摘要翻译： 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

公开(公告)号：US08198124B2

公开(公告)日：2012-06-12

申请号：US12652576

申请日：2010-01-05

申请人： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

发明人： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

IPC分类号： H01L21/00

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

摘要： Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

摘要翻译： 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

公开(公告)号：US20110165728A1

公开(公告)日：2011-07-07

申请号：US12652576

申请日：2010-01-05

申请人： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

发明人： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

IPC分类号： H01L21/06

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

摘要： Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

摘要翻译： 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。